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    MOSFET 40A 12V Search Results

    MOSFET 40A 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 40A 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		PDF IRFP150 sil 5102 IRFP150 TB334

    irfp150

    Abstract: No abstract text available
    Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,


    Original     		PDF IRFP15 IRFP150 irfp150

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150

    sil 5102

    Abstract: 150N IRFP150 TB334 PO40A
    Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N


    Original     		PDF IRFP15 sil 5102 150N IRFP150 TB334 PO40A

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    74HC125

    Abstract: 2N3904 C28 BAT54A FDS6670A FDS7760A LTC1929 LTC1929-PG MBRS320T3 T510X477M006AS 16SP27OM
    Text: = !"#$%&' =PolyPhase !J ! 234 Wei Chen !" ! !"# J ! !"#$%&'( *'+,-./01!"#$%&'()*+),-. /012 !"#$%&'()*+!"#$,-./0 = MOSFET !"#$%&'()&*+,!"#$%&'()*+,-./ 0123 !"#$%&'()*+,-./01234 ! LTC1929-PG !"#$ ( power good ) !"#$%&$'()*+,-.+/01$ ! ( ASIC ) !( 40A ) ! ( ≤6V )


    Original     		PDF LTC1929-PG 1929/LTC1929-PG 12VIN+ 1000pF 680pF 470pF 74HC125 LTC1929 LTC1629 74HC125 2N3904 C28 BAT54A FDS6670A FDS7760A LTC1929 LTC1929-PG MBRS320T3 T510X477M006AS 16SP27OM

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET

    frk150

    Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD frk150 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R

    Untitled

    Abstract: No abstract text available
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: FRK150D FRK150H FRK150R
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK150D FRK150H FRK150R

    Untitled

    Abstract: No abstract text available
    Text: Enpirion Power Datasheet ET4040QI 40A Power Stage High Speed MOSFET with Integrated Current and Temperature Sense Description Features The ET4040QI is a 40A, high speed, high density, monolithic power stage IC with integrated sensing features in a 5.5mm x 7.5mm x 0.95mm, 46 pin QFN


    Original     		PDF ET4040QI

    mosfet SMD 6 PIN IC FOR PWM

    Abstract: 210nH IR3553MTRPBF ir3550 IR3553
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M mosfet SMD 6 PIN IC FOR PWM 210nH IR3553MTRPBF

    IRFPS37N50A

    Abstract: IRFPS40N60K IR 224A
    Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF 4384A IRFPS40N60K O-247AC 12-Mar-07 IRFPS37N50A IRFPS40N60K IR 224A

    irfps40n60k

    Abstract: IRFPS
    Text: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF IRFPS40N60K O-247AC 5M-1994. O-274AA irfps40n60k IRFPS

    Untitled

    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to (VCC - 2.5V)


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M

    IRFPS37N50A

    Abstract: IRFPS40N60K
    Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF 4384A IRFPS40N60K O-247AC Super-247TM IRFPS37N50A IRFPS37N50A IRFPS40N60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF 4384A IRFPS40N60K O-247AC 08-Mar-07

    4311 mosfet transistor

    Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
    Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP150 TA17431. O-247 4311 mosfet transistor tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2

    IRFP150

    Abstract: 150N TB334
    Text: S N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFP15 TA17431. IRFP150 150N TB334

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 = 500V = 40A ≤ 170mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 O-247 063in) IXTH40N50L2 100ms

    Untitled

    Abstract: No abstract text available
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK150D, FRK150R, FRK150H 055S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    Untitled

    Abstract: No abstract text available
    Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP150 O-247