AF4409
Abstract: No abstract text available
Text: AF4409P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching - Capable of 2.5V Drive The advanced power MOSFET provides the designer with the best combination of fast switching,
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AF4409P
440wer
4409P
AF4409
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AF4409P
Abstract: No abstract text available
Text: AF4409P P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability These miniature surface mount MOSFETs utilize
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AF4409P
015x45
AF4409P
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4409AGEM
Abstract: AP4409AGEM MARKING CODE SO-8
Text: AP4409AGEM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D ▼ Fast Switching Characteristic G SO-8 S S BVDSS -35V RDS ON 7.5mΩ ID -14.5A S Description
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AP4409AGEM
25RONICS
4409AGEM
4409AGEM
AP4409AGEM
MARKING CODE SO-8
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marking CODE 62A general
Abstract: AF4409P P-Channel 30 V D-S MOSFET
Text: AF4409P P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability These miniature surface mount MOSFETs utilize
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AF4409P
015x45
marking CODE 62A general
AF4409P
P-Channel 30 V D-S MOSFET
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4409GEM
Abstract: AP4409GEM 4409G
Text: AP4409GEM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D ▼ Fast Switching Characteristic G SO-8 S S BVDSS -35V RDS ON 7.5mΩ ID -14.5A S Description
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AP4409GEM
4409GEM
4409GEM
AP4409GEM
4409G
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SSM4409GEM
Abstract: No abstract text available
Text: SSM4409GEM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -35V R DS ON 7.5mΩ ID -14.5A DESCRIPTION The SSM4409GEM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as battery
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SSM4409GEM
SSM4409GEM
4409GEM
330mm)
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2N6394
Abstract: 593D HIP6011
Text: HIP6011 TM Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an N-Channel
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HIP6011
HIP6011
C6-C11
1000pF
1N4148
MBR1535CT
T60-52;
14Turns
2N6394
593D
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2N6394
Abstract: 593D HIP6011
Text: HIP6011 Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an N-Channel
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HIP6011
HIP6011
1000pF
C6-C11
1N4148
MBR1535CT
T60-52;
14Turns
2N6394
593D
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4409GEM
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4409GEM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -35V Fast Switching Performance RDS ON 7.5mΩ ID -14.5A G RoHS-compliant, halogen-free S Description D Advanced Power MOSFETs from APEC provide the designer with the best
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AP4409GEM-HF-3
AP4409GEM-HF-3
AP4409
4409GEM
4409GEM
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Untitled
Abstract: No abstract text available
Text: AP4409GEM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D D D D Low On-resistance Fast Switching Characteristic G SO-8 S S -35V RDS ON 7.5m ID -14.5A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4409GEM
4409GEM
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Untitled
Abstract: No abstract text available
Text: AP4409AGEM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D D D D Low On-resistance Fast Switching Characteristic G SO-8 S S -35V RDS ON 7.5m ID -14.5A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4409AGEM
4409AGEM
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4409AGEM
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4409AGEM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -35V Fast Switching Performance RDS ON 7.5mΩ ID -14.5A G RoHS-compliant, halogen-free S Description D Advanced Power MOSFETs from APEC provide the designer with the best
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AP4409AGEM-HF-3
AP4409AGEM-HF-3
AP4409A
4409AGEM
4409AGEM
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panasonic 680uf 4v FL
Abstract: mosfet 4409 panasonic 4v 680uf FL MBR1535
Text: HIP6011 S E M I C O N D U C T O R PRELIMINARY Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an N-Channel
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HIP6011
HIP6011
200kHz
1-800-4-HARRIS
panasonic 680uf 4v FL
mosfet 4409
panasonic 4v 680uf FL
MBR1535
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smd zener diode BLUE BAND
Abstract: zener smd diode 6.2v 1w zener 20w smd diode 1w p9030 24v mosfet for audio 5.1 circuit mosfet 500 watts audio amplifier Apogee Technology 15w audio amplifier circuit diagram 200 watt audio amplifier 24v Audio amplifier class d
Text: ATA-120 20W Class D Single Channel Audio Amplifier FEATURES • • • • • • • • • • • • 1.0 GENERAL DESCRIPTION HIGH OUTPUT POWER CAPABILITY SINGLE SUPPLY +7.5V to +24V THD+N < 0.05% @ 1W, 8Ω HIGH EFFICIENCY, > 90% @ 4Ω, 20W LOW QUIESCENT CURRENT, 13mA
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ATA-120
ATA-120
Rev14
smd zener diode BLUE BAND
zener smd diode 6.2v 1w
zener 20w smd diode 1w
p9030
24v mosfet for audio 5.1 circuit
mosfet 500 watts audio amplifier
Apogee Technology
15w audio amplifier circuit diagram
200 watt audio amplifier
24v Audio amplifier class d
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DDX-8001
Abstract: c 9450 ddx-8228 power mosfet audio amplifier class-A 9450 transistor DDX-8000 Fs marking power amplifier h-bridge pwm schematics circuit 5.1 surround sound circuits car mosfet audio amplifier diagram
Text: DDX-2102 All-Digital High Efficiency Power Amplifier FEATURES 1.0 GENERAL DESCRIPTION • • HIGH OUTPUT CAPABILITY DDX Mono-Mode: • DDX® Full-Bridge Mode: • Binary Half-Bridge Mode: • • • • • * 1 x 130 W, 4Ω, < 10% THD * 2 x 50 / 65 W, 6Ω / 8Ω, < 10% THD
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DDX-2102
DDX-2102
Rev08
DDX-8001
c 9450
ddx-8228
power mosfet audio amplifier class-A
9450 transistor
DDX-8000
Fs marking power amplifier
h-bridge pwm schematics circuit
5.1 surround sound circuits
car mosfet audio amplifier diagram
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DDX-2160
Abstract: ddx-8228 DDX-2100 DDX-8000 DDX-2120 8229 ddx8000 ddx8228 ddx2160 Apogee
Text: DDX-2160/DDX-2120/DDX-2100 All-Digital High Efficiency Power Amplifiers FEATURES • • • • * * * DDX-2160: 1 x 160 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2120: 1 x 125 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2100: 1 x 100 / 130 W, 3Ω / 4Ω, < 10% THD * *
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DDX-2160/DDX-2120/DDX-2100
DDX-2160:
DDX-2120:
DDX-2100:
DDX-2160
ddx-8228
DDX-2100
DDX-8000
DDX-2120
8229
ddx8000
ddx8228
ddx2160
Apogee
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MOSFET 4407
Abstract: irfu420 MOSFET 4407 a IRFR420 IRFR4209A TB334
Text: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR420,
IRFU420
TA17405.
MOSFET 4407
irfu420
MOSFET 4407 a
IRFR420
IRFR4209A
TB334
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Apogee
Abstract: 2060 DDX-2060 DDX2060 DDX-2000 24v Audio amplifier class d 24v Audio amplifier class d single supply 24v up Audio amplifier 2x35W diode e 2060
Text: DDX-2000/2060 All-Digital High Efficiency Power Amplifier GENERAL DESCRIPTION FEATURES • HIGH OUTPUT CAPABILITY 2x35W into 8 Ω @ <1% THD+N 1x70W into 4 Ω @ <1% THD+N • SINGLE SUPPLY +9V to +30V • HIGH EFFICIENCY, >88% • DIGITAL VOLUME CONTROL, ANTICLIPPING AND AUTOMATIC MUTE
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DDX-2000/2060
2x35W
1x70W
DDX-2000
DDX-2060
Apogee
2060
DDX2060
24v Audio amplifier class d
24v Audio amplifier class d single supply
24v up Audio amplifier
diode e 2060
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ddx-2052
Abstract: DDX-8001 diode ch6b 98C51 ddx8001 electric capacitor 330uF 25V ddx2052 1uF, NPO 500 watt half bridge schematic ddx-8228
Text: DDX-2102 All-Digital High Efficiency Power Amplifier FEATURES 1.0 GENERAL DESCRIPTION • • HIGH OUTPUT CAPABILITY DDX Mono-Mode: • DDX® Full-Bridge Mode: • Binary Half-Bridge Mode: • • • • • * 1 x 130 W, 4Ω, < 10% THD * 2 x 50 / 65 W, 6Ω / 8Ω, < 10% THD
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DDX-2102
DDX-2102
Rev07
ddx-2052
DDX-8001
diode ch6b
98C51
ddx8001
electric capacitor 330uF 25V
ddx2052
1uF, NPO
500 watt half bridge schematic
ddx-8228
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ddx-2052
Abstract: DDX-2062 ch6b DDX2062 diode ch6b 50 amp H-bridge Mosfet Apogee audio amp. mosfet 100 watt car mosfet audio amplifier diagram diode d1n4148
Text: DDX-2062/DDX-2052 All-Digital High Efficiency Power Amplifiers FEATURES • • • • • • • • • • 1.0 GENERAL DESCRIPTION HIGH OUTPUT CAPABILITY DDX Mono-Mode: * * DDX-2062: 1 x 90 W, 4Ω, <10% THD DDX-2052: 1 x 80 W, 4Ω, <10% THD * * DDX-2062: 2 x 45 W, 8Ω, <10% THD
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DDX-2062/DDX-2052
DDX-2062:
DDX-2052:
DDX-2062/DDX-2052
DDX-2062)
DDX-2052)
ddx-2052
DDX-2062
ch6b
DDX2062
diode ch6b
50 amp H-bridge Mosfet
Apogee
audio amp. mosfet 100 watt
car mosfet audio amplifier diagram
diode d1n4148
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Untitled
Abstract: No abstract text available
Text: HIP6011 Semiconductor PRELIMINARY Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance micropro
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HIP6011
HIP6011
680nF
N4148
1000nF
MBR1535CT
T60-52;
14Turns
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Untitled
Abstract: No abstract text available
Text: HARRIS H IP 6 0 1 1 S E M I C O N D U C T O R PRELIMINARY Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance micropro
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HIP6011
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: LTC1148 LTC1148-3.3/LTC1148-5 u r m TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ nTU R€ S D €SCRIPTIOn • Ultra-High Efficiency: Over 95% Possible ■ Current-Mode Operation for Excellent Line and Load Transient Response
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LTC1148
LTC1148-3
3/LTC1148-5
160jaA
20juA
14-Pin
4VT014V
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Untitled
Abstract: No abstract text available
Text: 4 3 0 5 57 1 0 0 S 4 1 1 5 17T • H a r r is HAS IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 1 9 9 1 Features Package 4 -P IN DIP TOP VIEW • 0.30A and 0.32A, 150V - 200V • rD S on — 5 .O il and 6 .5 0
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92CS-4Ã
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