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    MOSFET 4410A Search Results

    MOSFET 4410A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4410A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4410AGM

    Abstract: PART MARKING 9A AP4410AGM AP4410
    Text: AP4410AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS RDS ON ID D D D D 30V 13.5mΩ 10A G SO-8 S S S Description


    Original     		AP4410AGM 4410AGM 4410AGM PART MARKING 9A AP4410AGM AP4410 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4410AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-resistance 30V RDS ON Fast Switching Performance G RoHS-compliant, halogen-free S 13.5mΩ ID 10A Description D Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		AP4410AGM-HF-3 AP4410AGM-HF-3 AP4410A 4410AGM PDF

    D-6840

    Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
    Text: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.


    OCR Scan     		IXBD4410/4411) 1503A IXBD4410 IXBD4411 IXBD4412 IXBD4413 10OOpF 100ns 000pF D-6840 transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101 PDF