4435 mosfet
Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展
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APM70N03
APM3005/7/9N
APM2509/6/4N
MO-23/25/26/89,
SC-70
0V/20V,
30mohm
/55mohm~
APM2300A/2322/2324,
APM2310/2320/2306,
4435 mosfet
APM2014
4410 mosfet
MOSFET 4420
4435* mos
4435 sc
MOSFET 4435
9935 mosfet
ANPEC
APM2310
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4435SC
Abstract: Mos-Fet 4435SC C391Q8 mosfet 4435sc
Text: CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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C391Q8
MTP4435Q8
MTP4435Q8
UL94V-0
4435SC
Mos-Fet 4435SC
C391Q8
mosfet 4435sc
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4435sc
Abstract: Mos-Fet 4435SC MEP4435Q8 C391Q8 mosfet 4435sc
Text: CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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C391Q8-A
MEP4435Q8
MEP4435Q8
UL94V-0
4435sc
Mos-Fet 4435SC
C391Q8
mosfet 4435sc
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4435a
Abstract: 4435a MOSFET F 4435a FHK4435A
Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK4435A P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-223 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻
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FHK4435A
OT-223
OT223
4435a
4435a MOSFET
F 4435a
FHK4435A
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4435 mosfet
Abstract: No abstract text available
Text: MOSFET SMD Type P-Channel MOSFET SI4435DY SOP-8 • Features ● VDS=-30V ● RDS on =0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage
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SI4435DY
00A/us
4435 mosfet
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4435gm
Abstract: Mosfet 4435gm
Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D D Low On-resistance -30V RDS ON D D 20m ID Fast Switching Characteristic RoHS Compliant SO-8 S S S -9A G Description
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AP4435GM-HF
4435GM
4435gm
Mosfet 4435gm
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4435SC
Abstract: Mos-Fet 4435SC mosfet 4435sc SSG4435 SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620
Text: SSG4435 -8A, -30V, RDS ON 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low
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SSG4435
SSG4435
4435SC
01-Mar-2011
4435SC
Mos-Fet 4435SC
mosfet 4435sc
SOP8 Package
MOSFET 30v sop-8
diode 8A 400 V
DSASW0059405
mar 620
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4435GM
Abstract: 4435g AP4435GMHF ap4435gm AP4435GM-HF
Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S S
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AP4435GM-HF
4435GM
4435GM
4435g
AP4435GMHF
ap4435gm
AP4435GM-HF
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4435GM
Abstract: ap4435gm 4435g AP4435 ap4435g
Text: AP4435GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic SO-8 S S S -9A G Description D
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AP4435GM
4435GM
4435GM
ap4435gm
4435g
AP4435
ap4435g
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4435GJ
Abstract: 4435gj MOSFET
Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID -30V 20m -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial
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AP4435GH/J
O-252
AP4435GJ)
O-251
O-251
4435GJ
4435GJ
4435gj MOSFET
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4435 mosfet
Abstract: Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m
Text: APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , D RDS ON =16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D D D S Super High Dense Cell Design
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APM4435K
-30V/-8A
4435 mosfet
Mi 4435
MOSFET 4435
4435
MARKING CODE 4435
marking 4435
APM4435K
STD-020C
4435 m
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4435GH
Abstract: 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435
Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic -40A G S Description The TO-252 package is widely preferred for all commercial-industrial
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AP4435GH/J
O-252
AP4435GJ)
O-251
O-251
4435GJ
4435GH
4435GJ
4435gj MOSFET
AP4435GH
AP4435GJ
4435*gj
4435g
AP4435
marking codes transistors SSs
4435
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4435GM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -30V Fast Switching Performance RDS ON 20mΩ G RoHS-compliant, Halogen-free S ID -9A Description D Advanced Power MOSFETs from APEC provide the designer with the best
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AP4435GM-HF-3
AP4435GM-HF-3
AP4435
4435GM
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tic 2260
Abstract: FDS4435 CBVK741B019 F63TNR L86Z
Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDS4435
tic 2260
FDS4435
CBVK741B019
F63TNR
L86Z
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4435 mosfet
Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Text: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •
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APM4435
-30V/-8A,
4435 mosfet
Mi 4435
MOSFET 4435
APM4435
4435 so8
4435D
4435 B
Mos-Fet apm4435
4435
marking 4435
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PDF
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Untitled
Abstract: No abstract text available
Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V
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WTK4435
-30V/-10A
-30V/-7A
WTK4435,
09-Jan-2014
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PDF
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4435sc
Abstract: WTK4435 Mos-Fet 4435SC mosfet 4435sc le1d
Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V
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WTK4435
WTK4435
300us,
03-May-07
4435sc
Mos-Fet 4435SC
mosfet 4435sc
le1d
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PDF
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4435 transistor so-8
Abstract: 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos
Text: AN007 High Efficiency LCD Monitor Power Design Using AIC1578 DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external form light loads to full loads, the AIC1578 uses the
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AN007
AIC1578
AIC1578
AIC1578CS
CEM4435
AIC1085CM
1N5820
O-263
4435 transistor so-8
4435 mosfet
AN007
4435 SO-8
SMD 4435
PCR 406 TRANSISTOR
smd transistor 513
4435 smd
transistor pcr 406
4435* mos
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transistor pcr 406
Abstract: 4435 transistor so-8 PCR 406 TRANSISTOR smd TRANSISTOR 1D AIC1578CS 4435 mosfet 4435 SO-8 470f 10 SMD 4435 SMD Transistor 1F
Text: AN99-001 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external
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AN99-001
AIC1578
AIC1578
AIC1578CS
CEM4435
AIC1085CM
1N5820
470mF
transistor pcr 406
4435 transistor so-8
PCR 406 TRANSISTOR
smd TRANSISTOR 1D
AIC1578CS
4435 mosfet
4435 SO-8
470f 10
SMD 4435
SMD Transistor 1F
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4F smd transistor
Abstract: transistor pcr 406 4435 mosfet PCR 406 TRANSISTOR 4435 smd 4435 transistor so-8 16V DC to 12v dc 5 amp converter circuit diagram aic 1578 cs 16V DC to 12v dc 8 amp converter circuit diagram AIC1578
Text: AN99-SR01EN March 1999 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION In order to maintain good conversion efficiency from light load to full load, the AIC1578 uses the intermittent switch control method of PFM PulseFrequency Modulation rather than the conventional
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AN99-SR01EN
AIC1578
AIC1578
AIC1578.
AIC1578CS
CEM4435
AIC1085CM
O-263
1N5820
4F smd transistor
transistor pcr 406
4435 mosfet
PCR 406 TRANSISTOR
4435 smd
4435 transistor so-8
16V DC to 12v dc 5 amp converter circuit diagram
aic 1578 cs
16V DC to 12v dc 8 amp converter circuit diagram
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PDF
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4435m
Abstract: 4431 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data S heet MTB50P03HDL HD TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM
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4435 SO-8
Abstract: PACKC12 4435 fairchild
Text: bq24740 www.ti.com . SLUS736B – DECEMBER 2006 – REVISED NOVEMBER 2008 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect
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bq24740
SLUS736B
30-ns
4435 SO-8
PACKC12
4435 fairchild
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Untitled
Abstract: No abstract text available
Text: bq24740 www.ti.com. SLUS736C – DECEMBER 2006 – REVISED MARCH 2009 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect
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bq24740
SLUS736C
30-ns
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PDF
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Untitled
Abstract: No abstract text available
Text: bq24740 www.ti.com. SLUS736C – DECEMBER 2006 – REVISED MARCH 2009 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect
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bq24740
SLUS736C
30-ns
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