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    MOSFET 4435GM Search Results

    MOSFET 4435GM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4435GM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435gm

    Abstract: Mosfet 4435gm
    Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D D Low On-resistance -30V RDS ON D D 20m ID Fast Switching Characteristic RoHS Compliant SO-8 S S S -9A G Description


    Original     		PDF AP4435GM-HF 4435GM 4435gm Mosfet 4435gm

    4435GM

    Abstract: 4435g AP4435GMHF ap4435gm AP4435GM-HF
    Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S S


    Original     		PDF AP4435GM-HF 4435GM 4435GM 4435g AP4435GMHF ap4435gm AP4435GM-HF

    4435GM

    Abstract: ap4435gm 4435g AP4435 ap4435g
    Text: AP4435GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic SO-8 S S S -9A G Description D


    Original     		PDF AP4435GM 4435GM 4435GM ap4435gm 4435g AP4435 ap4435g

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -30V Fast Switching Performance RDS ON 20mΩ G RoHS-compliant, Halogen-free S ID -9A Description D Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP4435GM-HF-3 AP4435GM-HF-3 AP4435 4435GM