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    MOSFET 4634 Search Results

    MOSFET 4634 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4634 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE84140 PE84140

    quad mosfet array

    Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
    Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE84140 PE84140 quad mosfet array 731 MOSFET PE84140-EK 8 mosfet array F617

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to


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    PDF PE4134 PE4134

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4124 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


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    PDF PE4124 PE4124

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


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    PDF PE4125 PE4125

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4126 High Linearity Quad MOSFET Mixer for DCS 1800 BTS Product Description The PE4126 is a high linearity, passive Quad MOSFET Mixer for DCS 1800 Base Station Receivers exhibiting high dynamic range performance over a broad LO drive range up to 20 dBm.


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    PDF PE4126 PE4126

    PE4126

    Abstract: PE4126-EK IF250
    Text: Product Specification PE4126 High Linearity Quad MOSFET Mixer for DCS 1800 BTS Product Description The PE4126 is a high linearity, passive Quad MOSFET Mixer for DCS 1800 Base Station Receivers exhibiting high dynamic range performance over a broad LO drive range up to 20 dBm.


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    PDF PE4126 PE4126 PE4126-EK IF250

    ETC1-1-13

    Abstract: PE4125 PE4125-EK
    Text: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


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    PDF PE4125 PE4125 ETC1-1-13 PE4125-EK

    640CB

    Abstract: ETC1-1-13 PE4124 PE4124-EK DSA0013645
    Text: Product Specification PE4124 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


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    PDF PE4124 PE4124 640CB ETC1-1-13 PE4124-EK DSA0013645

    4134 mosfet

    Abstract: MRF MOSFET 70-0087 PE4134 RF POWER MOSFET ETK4-2T
    Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to


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    PDF PE4134 PE4134 4134 mosfet MRF MOSFET 70-0087 RF POWER MOSFET ETK4-2T

    PE4122

    Abstract: 7000410
    Text: Product Specification PE4122 UltraCMOS High Linearity Quad MOSFET Mixer For PCS & 3G BTS Product Description The PE4122 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range up to +20


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    PDF PE4122 PE4122 7000410

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4122 UltraCMOS High Linearity Quad MOSFET Mixer For PCS & 3G BTS Product Description The PE4122 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range up to +20


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    PDF PE4122 PE4122

    Untitled

    Abstract: No abstract text available
    Text: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output


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    PDF MIC4414/15 MIC4414) MIC4415) MIC4414/5-102012

    Untitled

    Abstract: No abstract text available
    Text: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output


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    PDF MIC4414/15 000pF mo470, MIC4414/5-102012

    46343

    Abstract: 4634 2SK1839
    Text: Ordering number:EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Package Dimensions unit:mm 2057A [2SK1839] 0.3 0.15 0.2 • Ultrasmall-sized package permitting 2SK1839applied sets to be made small and slim. · Largeyfs.


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    PDF EN4634 2SK1839 2SK1839] 2SK1839applied 46343 4634 2SK1839

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4240 SPST UltraCMOS CATV Switch DC - 1300 MHz Product Description The PE4240 is a high-isolation MOSFET Switch designed for CATV applications, covering a broad frequency range from DC up to 1.3 GHz. This single-supply SPST switch offers a


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    PDF PE4240 PE4240

    PE4240

    Abstract: PE4240-EK
    Text: Product Specification PE4240 SPST UltraCMOS CATV Switch DC - 1300 MHz Product Description The PE4240 is a high-isolation MOSFET Switch designed for CATV applications, covering a broad frequency range from DC up to 1.3 GHz. This single-supply SPST switch offers a


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    PDF PE4240 PE4240 PE4240-EK

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.04 / March 2013 ZSPM9010 Ultra-Compact, High-Performance DrMOS Device Power and Precision Smart Power Management ICs ZSPM9010 Ultra-Compact, High-Performance, High-Frequency DrMOS Brief Description Benefits The ZSPM9010 DrMOS is a fully optimized, ultracompact, integrated MOSFET plus driver power


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    PDF ZSPM9010 ZSPM9010 PQFN40 ZSPM9010â JA-1102

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.04 / March 2013 ZSPM9010 Ultra-Compact, High-Performance DrMOS Device Power and Precision Smart Power Management ICs ZSPM9010 Ultra-Compact, High-Performance, High-Frequency DrMOS Brief Description Benefits The ZSPM9010 DrMOS is a fully optimized, ultracompact, integrated MOSFET plus driver power


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    PDF ZSPM9010 ZSPM9010 PQFN40 ZSPM9010â JA-1102

    PQFN40

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.03 / March 2013 ZSPM9000 Ultra-Compact, High-Performance DrMOS Device Power and Precision Smart Power Management ICs ZSPM9000 Ultra-Compact, High-Performance DrMOS Device Brief Description Benefits The ZSPM9000 DrMOS is a fully optimized, ultracompact, integrated MOSFET plus driver powerstage solution for high-current, high-frequency,


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    PDF ZSPM9000 ZSPM9000 PQFN40 ZSPM9000â JA-1102

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.03 / March 2013 ZSPM9000 Ultra-Compact, High-Performance DrMOS Device Power and Precision Smart Power Management ICs ZSPM9000 Ultra-Compact, High-Performance DrMOS Device Brief Description Benefits The ZSPM9000 DrMOS is a fully optimized, ultracompact, integrated MOSFET plus driver powerstage solution for high-current, high-frequency,


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    PDF ZSPM9000 ZSPM9000 PQFN40 ZSPM9000â JA-1102

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.00 / April 2013 ZSPM9015 Ultra-Compact, High-Performance, High-Frequency DrMOS Device Smart Power Management ICs Power and Precision ZSPM9015 Ultra-Compact, High-Performance, High-Frequency DrMOS Device Brief Description Benefits The ZSPM9015 is ZMDI’s next-generation, fully


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    PDF ZSPM9015 ZSPM9015 JA-1102

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev. 1.10 / August 2013 ZSPM9015 Ultra-Compact, High-Performance, High-Frequency DrMOS Device Smart Power Management ICs Power and Precision ZSPM9015 Ultra-Compact, High-Performance, High-Frequency DrMOS Device Brief Description Benefits The ZSPM9015 is ZMDI’s next-generation, fully


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    PDF ZSPM9015 ZSPM9015 JA-1102

    g10 smd transistor

    Abstract: SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to


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    PDF EIA-481-1. g10 smd transistor SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking