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    MOSFET 4926N Search Results

    MOSFET 4926N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4926N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		NTMFS4926NE NTMFS4926NE/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		NTMFS4926NE NTMFS4926NE/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		NTMFS4926NE NTMFS4926NE/D PDF

    mosfet 4926n

    Abstract: 4926N
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D mosfet 4926n 4926N PDF

    mosfet 4926n

    Abstract: 4926N NTMFS4926NT1G NTMFS4926N
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D mosfet 4926n 4926N NTMFS4926NT1G NTMFS4926N PDF

    mosfet 4926n

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D mosfet 4926n PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D PDF

    4926N

    Abstract: mosfet 4926n NTMFS4926NT1G
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4926N NTMFS4926N/D 4926N mosfet 4926n NTMFS4926NT1G PDF