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    MOSFET 4939N Search Results

    MOSFET 4939N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4939N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4939n

    Abstract: mosfet 4939n NTMS4939NR2G
    Text: NTMS4939N Power MOSFET 30 V, 12.5 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    NTMS4939N NTMS4939N/D 4939n mosfet 4939n NTMS4939NR2G PDF

    4939N

    Abstract: mosfet 4939n
    Text: NTMS4939N Power MOSFET 30 V, 12.5 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    NTMS4939N NTMS4939N/D 4939N mosfet 4939n PDF

    4939n

    Abstract: 15AID 488A
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    NTMFS4939N NTMFS4939N/D 4939n 15AID 488A PDF

    4939n

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    NTMFS4939N NTMFS4939N/D 4939n mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    NTMFS4939N NTMFS4939N/D PDF

    mosfet 4939n

    Abstract: 4939n
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTMFS4939N NTMFS4939N/D mosfet 4939n 4939n PDF

    4939N

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTMFS4939N NTMFS4939N/D 4939N mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G PDF