4953BDYSS
Abstract: 4953b TF23 MTDP4953BDYQ8
Text: CYStech Electronics Corp. Spec. No. : C401Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
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C401Q8
MTDP4953BDYQ8
MTDP4953BDYQ8
UL94V-0
4953BDYSS
4953b
TF23
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4953ss
Abstract: MTDP4953Q8 sop8 Package dimension sop-8 582
Text: CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953Q8 Description The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
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C402Q8
MTDP4953Q8
MTDP4953Q8
UL94V-0
4953ss
sop8 Package dimension
sop-8 582
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4953p
Abstract: max5390 mosfet 4953
Text: AF4953P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
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AF4953P
4953p
max5390
mosfet 4953
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Si6933DQ
Abstract: No abstract text available
Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET
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Si6933DQ
49538--Rev.
06-Oct-97
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SI6933DQ
Abstract: No abstract text available
Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET
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Si6933DQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
HUFA75531SK8
MS-012AA
75531SK8
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mosfet 4953
Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
Text: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
75531SK8
mosfet 4953
4953 mosfet
m 4953
mw 4953
AN9321
HUFA75531SK8
HUFA75531SK8T
MS-012AA
TB370
151E9
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Mosfet
Abstract: SSF4953
Text: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
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SSF4953
SSF4953
Mosfet
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4953P
Abstract: AF4953P mosfet 4953 SECT10
Text: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack
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AF4953P
015x45
4953P
AF4953P
mosfet 4953
SECT10
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4953p
Abstract: AF4953P
Text: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack
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AF4953P
015x45
4953p
AF4953P
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APM4953
Abstract: PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet
Text: APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS ON = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package
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APM4953
-30V/-4
APM4953
PM4953
ANPEC
Anpec Electronics
marking G5 MOSFET
mosfet 4953
5H MARKING
6H MARKING
27BSC
4953 mosfet
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Untitled
Abstract: No abstract text available
Text: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low Gate Charge Fast Switching BVDSS D2 -30V RDS ON D2 D1 D1 53m ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the
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AP4953GM
4953GM
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4953ss
Abstract: ssg4953
Text: SSG4953 -6 A, -30 V, RDS ON 45 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and
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SSG4953
SSG4953
4953SS
21-Feb-2013
4953ss
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4953A
Abstract: SSG4953 ssg4953a
Text: SSG4953A P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 42 m Elektronische Bauelemente DESCRIPTION The SSG4953A uses high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The SOP-8 package is universally preferred for all commercial-industrial surface mount
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SSG4953A
SSG4953A
4953ASS
t10sec.
Width300s,
22-Oct-2009
4953A
SSG4953
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Untitled
Abstract: No abstract text available
Text: _SÌ6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY Vd s OO R o s io n ) I 52) I d IA I 0.065 V G S = 10 V ± 3 .9 0.095 0 V g s = 4 . 5 V ± 3.1 30 d2 Dl o Q TSSOP-8 Di Œ Si E 3] d2 • S Ì6954 D O s, E
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6954DQ
06-Oct-97
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Untitled
Abstract: No abstract text available
Text: _ SÌ4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET VD. (V) r d s <o n ] (Q ) lD (A) 0.037 @ V q s = 10 V ± 5 .8 0.055 @ V GS = 4.5 V ± 4 .7 30 u u D, SO-8 , A B S O L U T E M A X I M U M R A T I N G S ( T fl f, C U N L E S S O T H E R W I S E
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4936DY
02-Feb-98
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mosfet 4953
Abstract: mosfet catalog
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Tabie of Contents General Inform ation . . 3 Index by Part Num ber . 4-9 MIL-PRF-19500 Qualified Products L is t.
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MIL-PRF-19500
-A-20
mosfet 4953
mosfet catalog
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SKiip 83 EC 125 T1
Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen
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toy helicopter remote control circuit diagram
Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power
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B192-H9213-X-X-7600
toy helicopter remote control circuit diagram
TDA 2377
nokia bts
str z 4267
rc helicopter circuit diagram
PG-TO252-5-11 footprint
nokia 5230 hardware
TDA 2525
Campus Italia Vol 1
how to make rc helicopter
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Untitled
Abstract: No abstract text available
Text: PULSE WIDTH MODULATION AMPLIFIER MSA240 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 2kW OUTPUT CAPABILITY • VARIABLE SWITCHING FREQUENCY
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MSA240
546-APEX
58-pin
MSA240
200mV.
85741or
MSA240U
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Untitled
Abstract: No abstract text available
Text: MSA240 MSA240 MSA240 Pulse Width Modulation Amplifiers FEATURES DESCRIPTION The MSA240 is a surface mount constructed PWM amplifier that provides a cost effective solution in many industrial applications. The MSA240 offers outstanding performance that rivals many much more expensive hybrid components.
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MSA240U
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mosfet 4953
Abstract: circuit mri oscillator 98Vs
Text: MSA240 MSA240 MSA240 Pulse Width Modulation Amplifiers FEATURES DESCRIPTION The MSA240 is a surface mount constructed PWM amplifier that provides a cost effective solution in many industrial applications. The MSA240 offers outstanding performance that rivals many much more expensive hybrid components.
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MSA240
MSA240
MSA240U
mosfet 4953
circuit mri oscillator
98Vs
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xc2765
Abstract: ECU ENGINE driver ignition coil Automatic Railway Gate Control system, ecu ems 3134 10w led driver SSC 9500 xc2320 EMS 3134 EPS ECU block diagram
Text: Scalable and Highly Integrated 16/32-bit Microcontrollers for Automotive Applications [ www.infineon.com/XC2000 ] 2 Contents XC2000 Family Overview 04 XC2200 for Body & Convenience 06 XC2300 for Safety 16 XC2700 for Powertrain 24 Enhanced Communication
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16/32-bit
com/XC2000]
XC2000
XC2200
XC2300
XC2700
12F-1,
xc2765
ECU ENGINE
driver ignition coil
Automatic Railway Gate Control system,
ecu ems 3134
10w led driver
SSC 9500
xc2320
EMS 3134
EPS ECU block diagram
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Untitled
Abstract: No abstract text available
Text: MSA240 MSA240 P r o dMSA240 u c t IInnnnoovvaa t i o n FFr roomm Pulse Width Modulation Amplifiers FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 2kW OUTPUT CAPABILITY • VARIABLE SWITCHING FREQUENCY APPLICATIONS
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MSA240U
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