9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and
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QW-R502-061
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-061.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-061
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60Z
4N60Z
O-220F
QW-R502-777
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60K
4N60K
O-220F
O-251
QW-R502-806
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-S
4N60-S
QW-R502-973
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tc 971
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-N
4N60-N
QW-R502-971.
tc 971
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60K
4N60K
O-220F
O-220F1
O-251
QW-R502-806
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4n60zg
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60Z-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60Z-E
4N60Z-E
QW-R502-A22.
4n60zg
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4n60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-Q
4N60-Q
QW-R502-972
4n60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-S
4N60-S
QW-R502-973.
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4n60zg
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60Z
4N60Z
O-251S
O-220F
O-251
O-252
QW-R502-777
4n60zg
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60K
4N60K
O-220F
O-220F1
O-251
QW-R502-806
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mosfet 4n60
Abstract: 4n60e
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-E
4N60-E
QW-R502-970
mosfet 4n60
4n60e
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-N
4N60-N
QW-R502-971
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-061
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4N60B
Abstract: 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N60L
QW-R502-061
4N60B
4n60-a
4n60a
utc 4n60l
mosfet 4n60
4N60
4n60b TO220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-R
4N60-R
O-220F1
QW-R502-A64
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utc 4n60l
Abstract: 4n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N60-Q
4N60-Q
QW-R502-972
utc 4n60l
4n60l
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utc 4n60l
Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220
O-220F
O-220F1
QW-R502-061
utc 4n60l
4N60L-TA3-T
4n60l
4n60e
mosfet 4n60
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4N60B
Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N60L
4N60G
QW-R502-061
4N60B
mosfet 4n60
utc 4n60l
4n60a
power mosfet switching
4n60b TO220
UTC4N60
4n60-b
utc 4n60g
4n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K-MK Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60K-MK
4N60K-MK
QW-R205-013
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4n60
Abstract: 4n60c mosfet 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-C
4N60-C
O-220F
O-251
QW-R502-A42
4n60
4n60c
mosfet 4n60
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