Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TL11CT3AG
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Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TL11CT3AG
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IRF7820
Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
Text: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7820PbF
155mH,
IRF7820
N mosfet 100v 500A
20V P-Channel Power MOSFET 500A
dap6
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Untitled
Abstract: No abstract text available
Text: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7836PbF
EIA-481
EIA-541.
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IRF7836PBF
Abstract: No abstract text available
Text: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7836PbF
EIA-481
EIA-541.
IRF7836PBF
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Untitled
Abstract: No abstract text available
Text: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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6013A
IRF7832ZPbF
EIA-481
EIA-541.
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IRF7832Z
Abstract: MOSFET NOTEBOOK
Text: PD - 96975A IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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6975A
IRF7832Z
EIA-481
EIA-541.
IRF7832Z
MOSFET NOTEBOOK
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EIA-541
Abstract: No abstract text available
Text: PD - 96082A IRF7832ZUPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and
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6082A
IRF7832ZUPbF
EIA-481
EIA-541.
EIA-541
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Untitled
Abstract: No abstract text available
Text: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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6013A
IRF7832ZPbF
EIA-481
EIA-541.
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EIA-541
Abstract: 96076
Text: PD - 96076A IRF7836UPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche
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6076A
IRF7836UPbF
EIA-481
EIA-541.
EIA-541
96076
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Untitled
Abstract: No abstract text available
Text: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS
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IRF7832ZPbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS
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6013A
IRF7832ZPbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 200V 78m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 10V VGS
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IRF7820PbF
155mH,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT7422-H Preliminary Power MOSFET 40A, 30V N-CHANNEL MOSFET DESCRIPTION The UTC UT7422-H is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UT7422-H is suitable for load switch and battery
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UT7422-H
UT7422-H
UT7422G-K08-3030-R
QW-R502-B36
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Untitled
Abstract: No abstract text available
Text: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
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IRF7832Z
EIA-481
EIA-541.
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AON7426
Abstract: 20A2
Text: AON7426 30V N-Channel MOSFET General Description Product Summary The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON7426
AON7426
20A2
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AON7424
Abstract: No abstract text available
Text: AON7424 30V N-Channel MOSFET General Description Product Summary The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON7424
AON7424
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Untitled
Abstract: No abstract text available
Text: AON7422E 30V N-Channel MOSFET General Description Product Summary The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON7422E
AON7422E
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AON6400L
Abstract: AON6400
Text: AON6400L 30V N-Channel MOSFET General Description Product Summary The AON6400L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON6400L
AON6400L
CharactON6400L
AON6400
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Untitled
Abstract: No abstract text available
Text: AON6202 30V N-Channel MOSFET General Description Product Summary The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6202
AON6202
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AO4588
Abstract: No abstract text available
Text: AO4588 30V N-Channel MOSFET General Description Product Summary The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4588
AO4588
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Untitled
Abstract: No abstract text available
Text: AON6242 60V N-Channel MOSFET General Description Product Summary The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6242
AON6242
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Untitled
Abstract: No abstract text available
Text: AON6400 30V N-Channel MOSFET General Description Product Summary The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON6400
AON6400
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Untitled
Abstract: No abstract text available
Text: AON6240 40V N-Channel MOSFET General Description Product Summary The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6240
AON6240
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