FDPF7N50U
Abstract: No abstract text available
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
FDP7N50U/FDPF7N50U
FDPF7N50U
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V
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FDP7N50U/FDPF7N50U
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FDPF7N50U
Abstract: No abstract text available
Text: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
FDP7N50U/FDPF7N50U
FDPF7N50U
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FDP7N50U
Abstract: FDPF7N50U
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
FDP7N50U
FDPF7N50U
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FDPF7N50U
Abstract: FDP7N50U
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
FDPF7N50U
FDP7N50U
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STP8NM50FP
Abstract: STP8NM50
Text: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STP8NM50
STP8NM50FP
O-220/TO-220FP
STP8NM50FP
STP8NM50
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Untitled
Abstract: No abstract text available
Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQPF5N50CF
FQPF5N50CF
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FQPF5N50CF
Abstract: DATE CODE FAIRCHILD
Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQPF5N50CF
FQPF5N50CF
FQPF5N50CFTU
DATE CODE FAIRCHILD
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Untitled
Abstract: No abstract text available
Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQPF5N50CF
FQPF5N50CF
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FQPF5N50CF
Abstract: No abstract text available
Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQPF5N50CF
FQPF5N50CF
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5N50FT
Abstract: 5N50T
Text: HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS ON =1.5W@VGS=10V, ID=2.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
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HY5N50T
HY5N50FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY5N50T
5N50T
5N50FT
5N50T
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STP8NM50FP
Abstract: No abstract text available
Text: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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O-220/TO-220FP
STP8NM50
STP8NM50FP
O-220
O-220FP
STP8NM50FP
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3E12
Abstract: FRS440D FRS440H FRS440R 2E12
Text: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS440D,
FRS440R,
FRS440H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
3E12
FRS440D
FRS440H
FRS440R
2E12
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FQB5N50CF
Abstract: FQB5N50CFTF FQB5N50CFTM
Text: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQB5N50CF
FQB5N50CF
FQB5N50CFTF
FQB5N50CFTM
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STP8NM50
Abstract: STP8NM50FP 1204 5a
Text: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP • ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STP8NM50
STP8NM50FP
O-220/TO-220FP
STP8NM50
STP8NM50FP
1204 5a
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STP8NM50FP
Abstract: No abstract text available
Text: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STP8NM50
STP8NM50FP
O-220/TO-220FP
STP8NM50FP
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is
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5N50K-MT
5N50K-MT
QW-R502-B22
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2E12
Abstract: 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET
Text: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS440D,
FRS440R,
FRS440H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS440D
FRS440H
FRS440R
Rad Hard in Fairchild for MOSFET
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STD5NM50
Abstract: STD5NM50-1
Text: STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE STD5NM50 STD5NM50-1 n n n n n n VDSS RDS on ID 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STD5NM50
STD5NM50-1
STD5NM50
STD5NM50-1
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STD5NM50
Abstract: No abstract text available
Text: STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE STD5NM50 STD5NM50-1 n n n n n n VDSS RDS on ID 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STD5NM50
STD5NM50-1
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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5N50K
5N50K
O-220F
QW-R502-870
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f5n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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F5N50
F5N50
QW-R502-A90
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5n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of
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O-262
O-220F
O-220F1
O-252
QW-R502-476
5n50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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F5N50
F5N50
QW-R502-A90
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