H50N03J
Abstract: MOSFET N 30V 30A 252
Text: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate
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MOS200514
H50N03J
H50N03J
O-252
other50oC
200oC
183oC
217oC
260oC
245oC
MOSFET N 30V 30A 252
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APM2510N
Abstract: apm2510 apm2510n mosfet apm*2510n APM2510NU ANPEC APM2510N TO252 tr2113 A102 APM2510N equivalent APM2510NU -wk22m
Text: APM2510NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8.5mΩ (typ.) @ VGS=10V G RDS(ON)=15mΩ (typ.) @ VGS=4.5V • • • • D Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and Rugged D
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APM2510NU
5V/50A,
O-252
APM2510N
APM2510N
apm2510
apm2510n mosfet
apm*2510n
APM2510NU
ANPEC APM2510N TO252
tr2113
A102
APM2510N equivalent
APM2510NU -wk22m
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APM2509NU
Abstract: STD-020C APM2509N APM2509
Text: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)
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APM2509NU
5V/50A
O-252
APM2509N
APM2509N
Dat16
APM2509NU
STD-020C
APM2509
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APM2509N
Abstract: APM2509NU
Text: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)
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APM2509NU
5V/50A
O-252
APM2509N
APM2509N
APM2509NU
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APM2510N
Abstract: apm2510 apm2510n mosfet apm*2510n APM2510NU ANPEC APM2510N TO252 STD-020C
Text: APM2510NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8.5mΩ (typ.) @ VGS=10V RDS(ON)=15mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)
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APM2510NU
5V/50A,
O-252
APM2510N
APM2510N
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
apm2510
apm2510n mosfet
apm*2510n
APM2510NU
ANPEC APM2510N TO252
STD-020C
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APM2509NU
Abstract: APM2509N
Text: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)
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APM2509NU
5V/50A
O-252
APM2509N
O-252
APM2509N
APM2509NU
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Untitled
Abstract: No abstract text available
Text: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)
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APM2509NU
5V/50A
O-252
APM2509N
APM2509N
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diode marking code 7
Abstract: A102 APM2505N APM2505NU STD-020C
Text: APM2505NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =4mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM2505NU
5V/50A,
O-252
APM2505N
APM2505N
diode marking code 7
A102
APM2505NU
STD-020C
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apm2518n
Abstract: APM2518 TO-252 N-channel MOSFET apm2518nu APM2510N apm25 code diode transient APM251oN
Text: APM2518NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8mΩ (Typ.) @ VGS=10V G RDS(ON)=15mΩ (Typ.) @ VGS=4.5V • • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Avalanche Rated D Lead Free and Green Devices Available
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APM2518NU
5V/50A,
O-252
APM2518N
O-252
APM2518
TO-252 N-channel MOSFET
apm2518nu
APM2510N
apm25
code diode transient
APM251oN
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ap60l02gj
Abstract: No abstract text available
Text: AP60L02GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 25V RDS ON 12mΩ ID G 50A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP60L02GH/J
O-252
AP60L02GJ)
O-251
ap60l02gj
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CHM6056PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM6056PAGP CURRENT Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM6056PAGP
O-252)
CHM6056PAGP
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Untitled
Abstract: No abstract text available
Text: PD - 97227 IRFB4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFB4228PbF
O-220AB
O-220AB
096mH,
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IRFB4228
Abstract: IRFB4228PBF
Text: PD - 97227A IRFB4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7227A
IRFB4228PbF
O-220AB
096mH,
IRFB4228
IRFB4228PBF
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irfp4228pbf
Abstract: No abstract text available
Text: PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7229A
IRFP4228PbF
O-247AC
173mH,
irfp4228pbf
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irfb4228
Abstract: No abstract text available
Text: PD - 97227 IRFB4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFB4228PbF
O-220AB
096mH,
irfb4228
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Untitled
Abstract: No abstract text available
Text: PD - 97229 IRFP4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFP4228PbF
O-247AC
O-247AC
173mH,
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AN-994
Abstract: No abstract text available
Text: PD - 97231A IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7231A
IRFS4228PbF
IRFSL4228PbF
AN-994.
AN-994
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AN-994
Abstract: No abstract text available
Text: PD - 97231 IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFS4228PbF
IRFSL4228PbF
096mH,
AN-994.
AN-994
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AN-994
Abstract: IRFS4228PBF
Text: PD - 97231 IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFS4228PbF
IRFSL4228PbF
AN-994.
AN-994
IRFS4228PBF
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Untitled
Abstract: No abstract text available
Text: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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4965A
IRF1010EPbF
O-220
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2689-01MR N-channel MOS-FET s t y M E i T U G a jK FAP-IIIB Series 30V > Features 50A 40W > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated T O -2 2 0 F 1 5 > Applications 2.7 3» £
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OCR Scan
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2SK2689-01MR
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Untitled
Abstract: No abstract text available
Text: FUJI 2SK2688-01L,S N-channel MOS-FET IS U jM O J llä U G FAP-IIIB Series 30V > Features - 0,0IQ 50 A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier
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2SK2688-01L
2SK2688-01
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n fet 60v 50a
Abstract: 4441 mosfet 4441 equivalent
Text: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier
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2SK2809-01
G004732
00DM733
n fet 60v 50a
4441 mosfet
4441 equivalent
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ISO 8015
Abstract: KF 520 2SK2688-01 US50A
Text: FUJI 2SK2688-01 L,S N-channel MOS-FET 30V 0,0 IQ 5 0 A 6 0 W FAP-IIIB Series > Features Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T-PACK L T-PACK S 105 4.5 Ü -JL2. _08. > Applications -
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2SK2688-01
277mH,
00D4bT0
ISO 8015
KF 520
US50A
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