Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
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P4525-ND
P5782-ND
1-877-GOLDMOS
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PTE10026
Abstract: No abstract text available
Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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Tota20/97
5801-PC
P4917-ND
P5276
5701-PC
PTE10026
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Transistor AC 51 0865 75 834
Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
Text: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
GI-200
Transistor AC 51 0865 75 834
ATC 1084
fe 5571
AC 51 0865
Transistor AC 51 0865 75 730
ic atc 1084
PTE 10011 Ericsson
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smd transistor marking j2
Abstract: Transistor z1
Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
smd transistor marking j2
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PHILIPS capacitors 0.1 mf
Abstract: Transistor t 2 smd motorola
Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
PHILIPS capacitors 0.1 mf
Transistor t 2 smd motorola
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re 10019
Abstract: 10019
Text: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum
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P5276
P4917-ND
ber1997
re 10019
10019
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nippon capacitors
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 3, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9210
MRF9210R3
MRF9210
nippon capacitors
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transistor D 1666
Abstract: PTE10021 bq 726
Text: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output
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KYS 30-40
Abstract: BG5130R BCR108S FW-50
Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction
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BG5130R
OT363
KYS 30-40
BG5130R
BCR108S
FW-50
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Text: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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711082b
BF988
Transistor BF988
BF988
bf988 philips semiconductor
PHILIPS MOSFET MARKING
philips bf988
dual gate fet
MC3344
mosfet 440 mhz
dual gate mosfet in vhf amplifier
dual gate
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
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BF998WR
OT343R
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RT9602
Abstract: No abstract text available
Text: RT9246 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9246 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9246 controls 2 or 3 buck switching stages z
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
DS9248-00
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Untitled
Abstract: No abstract text available
Text: RT9246 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9246 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9246 controls 2 or 3 buck switching stages z
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RT9602
Abstract: No abstract text available
Text: RT9244 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9244 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9244 controls 2, 3 or 4 buck switching stages
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RT9244
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32-Lead
DS9244-02
RT9602
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Untitled
Abstract: No abstract text available
Text: Preliminary RT9247 Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9247 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9247 controls 2 or 3 buck switching stages operating
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RT9247
RT9247
28-Lead
DS9247-03
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
28-Lead
DS9248-03
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Untitled
Abstract: No abstract text available
Text: RT9243 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9243 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9243 controls 2, 3 or 4 buck switching stages
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RT9243
RT9243
32-Lead
DS9243-03
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Untitled
Abstract: No abstract text available
Text: RT9248A Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248A is a cost-effective multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248A controls 2 or 3 buck switching stages
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RT9248A
RT9248A
DS9248A-07
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
28-Lead
DS9248-04
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Untitled
Abstract: No abstract text available
Text: Preliminary RT9247 Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9247 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9247 controls 2 or 3 buck switching stages operating
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RT9247
RT9247
28-Lead
DS9247-04
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature
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BF998R
OT143R
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125EU
AGR21125EF
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sm 4500
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AGR21030EF
Abstract: AGR21030XF JESD22-C101A J622
Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030EF
AGR21030EF
DS04-225RFPP
DS04-200RFPP)
AGR21030XF
JESD22-C101A
J622
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