Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 600V, 2A Search Results

    MOSFET 600V, 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2179R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 600V 0.7A 4.5Mohm Sop8 Visit Renesas Electronics Corporation
    RJK6024DPD-00#J2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 0.4A 42000Mohm Mp-3A/To-252 Visit Renesas Electronics Corporation
    2SJ181STR-E Renesas Electronics Corporation Pch Single Power Mosfet -600V -0.5A 25000Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    RJK6014DPP-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 16A 575Mohm To-220Fp Visit Renesas Electronics Corporation
    RJK6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 920Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    MOSFET 600V, 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    Mosfet

    Abstract: SSF2N60D1
    Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D1 O-252 O-252ï Mosfet SSF2N60D1

    Mosfet

    Abstract: SSF2N60G
    Text: SSF2N60G 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.5Ω (typ.) ID 2A TO-251 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60G O-251 O-251ï Mosfet SSF2N60G

    Mosfet

    Abstract: SSF2N60D2
    Text: SSF2N60D2 600V N-Channel MOSFET Preliminary Main Product Characteristics VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D2 O-252 O-252ï Mosfet SSF2N60D2

    F2HNK60Z

    Abstract: D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1
    Text: STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID PTOT STD2HNK60Z 600V <4.8Ω 2A 45W STD2HNK60Z-1 600V <4.8Ω 2A 45W


    Original     		PDF STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP O-92/TO-220FP/DPAK/IPAK STD2HNK60Z STF2HNK60Z O-220 F2HNK60Z D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1

    zener 600v

    Abstract: STD2NM60 STD2NM60-1
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STD2NM60 STD2NM60-1 zener 600v STD2NM60 STD2NM60-1

    4NC60

    Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4NC60 STB4NC60-1 STP4NC60FP

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP

    4NC60

    Abstract: STB4NC60A-1 STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 4NC60 STB4NC60A-1 STP4NC60AFP

    4nC60

    Abstract: STP4NC60FP STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 4nC60 STP4NC60FP STB4NC60-1

    STD2NM60

    Abstract: STD2NM60-1
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 STD2NM60 STD2NM60-1

    Untitled

    Abstract: No abstract text available
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP

    4NC60

    Abstract: STP4NC60A STB4NC60A-1 STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) 4NC60 STB4NC60A-1 STP4NC60AFP

    4nc60

    Abstract: STP4NC60FP B4NC60 STB4NC60-1 STP4NC60
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4nc60 STP4NC60FP B4NC60 STB4NC60-1

    STD2NM60

    Abstract: STD2NM60-1
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD2NM60 STD2NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 STD2NM60 STD2NM60-1

    Untitled

    Abstract: No abstract text available
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD2NM60 STD2NM60-1 O-252 O-251

    Mosfet

    Abstract: SSF2N60
    Text: SSF2N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF2N60 O-220 withstanSSF2N60 Mosfet SSF2N60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		PDF QW-R502-053

    4nc60

    Abstract: B4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NC60 600V < 2.2Ω 4.2A STP4NC60FP 600V < 2.2Ω 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4nc60 B4NC60 STP4NC60FP

    STD3NC60

    Abstract: STD3NC60-1
    Text: STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh II MOSFET TYPE STD3NC60 STD3NC60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STD3NC60 STD3NC60-1 STD3NC60 STD3NC60-1

    Untitled

    Abstract: No abstract text available
    Text: STP4NC60A STP4NC60AFP N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP PowerMesh II MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP4NC60A 600V < 2Ω 4.2A STP4NC60AFP 600V < 2Ω 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF O-220/TO-220FP STP4NC60A STP4NC60AFP O-220

    STD3NC60

    Abstract: STD3NC60-1
    Text: STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh II MOSFET TYPE STD3NC60 STD3NC60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STD3NC60 STD3NC60-1 STD3NC60 STD3NC60-1

    Untitled

    Abstract: No abstract text available
    Text: STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh II MOSFET TYPE STD3NC60 STD3NC60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STD3NC60 STD3NC60-1