Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4114 Preliminary Power MOSFET 20A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4114 is an N-channel power MOSFET uses UTC’s advanced trench technology to provide customers perfect RDS ON and low gate charge. This device can be applied in Game Machine or in PC
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UT4114
UT4114
315pF
UT4114L-S08-R
UT4114G-S08-R
QW-R502-A78
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4114 Preliminary Power MOSFET 20A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4114 is an N-channel power MOSFET uses UTC’s advanced trench technology to provide customers perfect RDS ON and low gate charge. This device can be applied in Game Machine or in PC.
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UT4114
UT4114
315pF
UT4114G-S08-R
QW-R502-A78
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SMK1080
Abstract: power mosfet switching SMK1080CI
Text: Preliminary SMK1080CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=800V Min. • Low Crss : Crss=15pF(Typ.) • Low gate charge : Qg=62nC(Typ.) • Low RDS(on) :RDS(on)=1.1Ω(Max.)
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SMK1080CI
SMK1080
SMK1080
power mosfet switching
SMK1080CI
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SMK0990
Abstract: SMK0990CI SMK-0
Text: Preliminary SMK0990CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=900V Min. • Low Crss : Crss=14pF(Typ.) • Low gate charge : Qg=62nC(Typ.) • Low RDS(on) :RDS(on)=1.4Ω(Max.)
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SMK0990CI
SMK0990
SMK0990
SMK0990CI
SMK-0
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36150A
Abstract: E153432 62N15 ISOPLUS247 62N15P 734B2
Text: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C
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62N15P
405B2
734B2
36150A
E153432
62N15
ISOPLUS247
62N15P
734B2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFX 62N25 IXFK 62N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient
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62N25
247TM
728B1
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62n25
Abstract: 62n25 mosfet 62n2 247TM
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient
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62N25
247TM
O-264
728B1
62n25
62n25 mosfet
62n2
247TM
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Untitled
Abstract: No abstract text available
Text: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170
250uA
O-220
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170FP
250uA
O-220
0E-06
0E-04
0E-02
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170B
250uA
O-263
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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Untitled
Abstract: No abstract text available
Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170FP
250uA
O-220
100us
0E-06
0E-04
0E-02
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE73N199 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE73N199
250uA
O-220
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE20N170U Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170U
250uA
O-262
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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62N15P
Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 62N15P IXTA 62N15P IXTP 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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62N15P
O-220
62N15P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
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62N15P
405B2
734B2
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62N15P
Abstract: 62n1 62N15 IXTP62N15P
Text: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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62N15P
O-263
62N15P
62n1
62N15
IXTP62N15P
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Untitled
Abstract: No abstract text available
Text: PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET Power MOSFET RoHS Compliant, Halogen Free l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification
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IRF7759L2TRPbF
IRF7759L2TR1PbF
200nC
AN1035
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IRF7759L2TR
Abstract: IRF7759L2TR1PBF diode 009 IRF7759
Text: PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET Power MOSFET RoHS Compliant, Halogen Free l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification
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IRF7759L2TRPbF
IRF7759L2TR1PbF
200nC
AN1035
IRF7759L2TR
IRF7759L2TR1PBF
diode 009
IRF7759
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irf9395
Abstract: No abstract text available
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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6332A
IRF9395MPbF
IRF9395MTRPbF
irf9395
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INTEGRATOR 9435
Abstract: mosfet 62N 4435 mosfet TQFP48 VRD10 CDF-AEC-Q100-002 CS216 L6711 L6711TR K2750
Text: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps
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L6711
TQFP48
150kHz
450kHz
INTEGRATOR 9435
mosfet 62N
4435 mosfet
TQFP48
VRD10
CDF-AEC-Q100-002
CS216
L6711
L6711TR
K2750
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Untitled
Abstract: No abstract text available
Text: IRF9395MPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MPbF
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irf9395
Abstract: IRF9395M IRF9395MTR1PBF IRF9395MTRPBF
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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6332A
IRF9395MPbF
IRF9395MTRPbF
irf9395
IRF9395M
IRF9395MTR1PBF
IRF9395MTRPBF
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L6711-based
Abstract: CDF-AEC-Q100-002 L6711 L6711TR TQFP48 VRD10 K2750
Text: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps
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L6711
150kHz
450kHz
L6711-based
CDF-AEC-Q100-002
L6711
L6711TR
TQFP48
VRD10
K2750
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Untitled
Abstract: No abstract text available
Text: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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96332B
IRF9395MPbF
IRF9395MTRPbF
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