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    MOSFET 65V 75A Search Results

    MOSFET 65V 75A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 65V 75A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM5060 www.ti.com SNVS628E – OCTOBER 2009 – REVISED JANUARY 2012 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100


    Original     		PDF LM5060 SNVS628E LM5060 Q-100

    Untitled

    Abstract: No abstract text available
    Text: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100


    Original     		PDF LM5060 SNVS628F LM5060 Q-100

    MIL-PRF-19500/684

    Abstract: irf 1490 IRHNA57163SE JANSR2N7472U2
    Text: PD-93856E IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2


    Original     		PDF PD-93856E IRHNA57163SE JANSR2N7472U2 MIL-PRF-19500/684 MIL-STD-750, MlL-STD-750, MIL-PRF-19500/684 irf 1490 IRHNA57163SE JANSR2N7472U2

    IRHNA57163SE

    Abstract: No abstract text available
    Text: PD - 93856B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL 4# TECHNOLOGY c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 93856B IRHNA57163SE IRHNA57163SE MIL-STD-750, MlL-STD-750,

    IRHNA57163SE

    Abstract: No abstract text available
    Text: PD - 93856A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL 4# TECHNOLOGY c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 3856A IRHNA57163SE IRHNA57163SE MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100


    Original     		PDF LM5060 SNVS628F LM5060 Q-100

    Untitled

    Abstract: No abstract text available
    Text: PD - 93856C IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2


    Original     		PDF 93856C IRHNA57163SE JANSR2N7472U2 MIL-PRF-19500/684 JANSR2N7472U2 MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-93856E IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2


    Original     		PDF PD-93856E IRHNA57163SE JANSR2N7472U2 MIL-PRF-19500/684 MIL-STD-750, MlL-STD-750,

    IRHNA57163SE

    Abstract: JANSR2N7472U2 MIL-PRF-19500 684
    Text: PD-93856D IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2


    Original     		PDF PD-93856D IRHNA57163SE JANSR2N7472U2 MIL-PRF-19500/684 establ280A/ MIL-STD-750, MlL-STD-750, IRHNA57163SE JANSR2N7472U2 MIL-PRF-19500 684

    Untitled

    Abstract: No abstract text available
    Text: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100


    Original     		PDF LM5060 SNVS628F LM5060 Q-100

    IRHNA57163SE

    Abstract: 93856
    Text: PD - 93856 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL R5 TECHNOLOGY ™ ™ Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF IRHNA57163SE IRHNA57163SE 93856

    Mosfet

    Abstract: SSF1007
    Text: SSF1007 100V N-Channel MOSFET Main Product Characteristics VDSS 100V（Typ） RDS on 6mohm（Typ） ID 130A Features and Benefits       SSF1007 Top View (TO-220) Advanced trench MOSFET process technology Special designed for convertors and power controls


    Original     		PDF SSF1007 SSF1007 O-220) O-220 O-220 Mosfet

    Mosfet

    Abstract: SSS1206
    Text: SSS1206 120V N-Channel MOSFET Main Product Characteristics VDSS 120V RDS on 4mΩ (typ.) ID 180A ① TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSS1206 O-220 Mosfet SSS1206

    AN-994

    Abstract: 9620* diode
    Text: PD - 97061C IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


    Original     		PDF 97061C IRFB4110PbF O-220AB AN-994. O-220AB AN-994 9620* diode

    AN-994

    Abstract: power mosfet 80v 150a D2PAK package IRFS4410PBF to262 pcb footprint
    Text: PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF O-220AB O-262 AN-994. AN-994 power mosfet 80v 150a D2PAK package IRFS4410PBF to262 pcb footprint

    MOSFET IRF 570

    Abstract: IRFS4310ZPBF AN-994 marking code jk IRF 120A power mosfet 80v 150a High Efficiency Synchronous Rectification in SMPS
    Text: PD - 97115B IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 97115B IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF O-220AB O-262 AN-994. MOSFET IRF 570 IRFS4310ZPBF AN-994 marking code jk IRF 120A power mosfet 80v 150a High Efficiency Synchronous Rectification in SMPS

    irf 540 mosfet

    Abstract: MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf
    Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. irf 540 mosfet MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf

    power mosfet 80v 150a

    Abstract: AN-994 Sl4410 High Efficiency Synchronous Rectification in SMPS
    Text: PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF O-220AB O-262 EIA-418. power mosfet 80v 150a AN-994 Sl4410 High Efficiency Synchronous Rectification in SMPS

    Single

    Abstract: No abstract text available
    Text: SSS1004A7 Main Product Characteristics VDSS 100V RDS on 3.0mΩ (typ.) ID 180A ① 1, Gate 2~3,5~7 Source 4,8 Drain TO-263-7L Schematic diagram Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSS1004A7 O-263-7L Single

    N-Channel vgs 40V MOSFET

    Abstract: HUFA7510P3 HUFA7510S3S
    Text: HUFA7510P3, HUFA7510S3S Data Sheet A d van ce I n f o r m a tio n November 1999 File Number 4802 75A, 75V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET [ /Title Packaging Features HUF76 JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance 400SK8 - rDS(ON = 0.010Ω, VGS = 10V


    Original     		PDF HUFA7510P3, HUFA7510S3S HUF76 O-220AB O-263AB 400SK8 NHUFA7510P3 N-Channel vgs 40V MOSFET HUFA7510P3 HUFA7510S3S

    Untitled

    Abstract: No abstract text available
    Text: PD - 97061 IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFB4110PbF O-220AB O-220AB

    IRFB4110PBF

    Abstract: No abstract text available
    Text: PD - 97061B IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


    Original     		PDF 97061B IRFB4110PbF O-220AB O-220AB IRFB4110PBF

    IRFB4110

    Abstract: IRFB4110PBF n-channel, 85v, 75a AN-994 9620* diode
    Text: PD - 97061B IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


    Original     		PDF 97061B IRFB4110PbF O-220AB O-220AB IRFB4110 IRFB4110PBF n-channel, 85v, 75a AN-994 9620* diode

    AN-994

    Abstract: n-channel, 85v, 75a IRFB4110PBF
    Text: PD - 97061A IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF 7061A IRFB4110PbF O-220AB O-220AB AN-994 n-channel, 85v, 75a IRFB4110PBF