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    MOSFET 700V 4A Search Results

    MOSFET 700V 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 700V 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N70F

    Abstract: No abstract text available
    Text: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


    Original     		PDF HY4N70T HY4N70FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY4N70T 4N70T 4N70F

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-R 4N70-R O-220F1 QW-R502-A66

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-C 4N70-C 4N70L-TFat QW-R502-A89

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70K-MK 4N70K-MK 4N70KL-TF3-T 4N70KG-TF3-T QW-r205-015

    8n70

    Abstract: PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet 8N70L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 8n70 PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-S 4N70-S O-252 QW-R205-023

    700v 4A mosfet

    Abstract: IDM32
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 700v 4A mosfet IDM32

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF 112nC) 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF1-T 8N70G-TF1-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70K-MT Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70K-MT is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF 8N70K-MT 8N70K-MT 8N70KL-TF1-T 8N70KG-TF1-T O-220F1 QW-R205-034

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.


    Original     		PDF 2N70ZL 2N70ZL QW-R502-765

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.


    Original     		PDF 2N70Z 2N70Z QW-R502-766

    8n70

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		PDF 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T O-220 O-220F QW-R502-711, 8n70

    AOTF11N70L

    Abstract: AOTF11N70 800V15 AOT11N70L AOT11N70
    Text: AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT11N70/AOTF11N70 AOT11N70 AOTF11N70 AOT11N70L AOTF11N70L O-220F O-220 AOTF11N70L 800V15 AOT11N70L AOT11N70

    Untitled

    Abstract: No abstract text available
    Text: AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT11N70/AOTF11N70 AOT11N70 AOTF11N70 AOT11N70L AOTF11N70L O-220F O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-E Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-E 4N70-E QW-R502-A72

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This


    Original     		PDF 2N70-CB 2N70-CB 2N70L-Tat QW-R209-072

    Untitled

    Abstract: No abstract text available
    Text: AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOWF11N70 AOWF11N70 Gat70

    Untitled

    Abstract: No abstract text available
    Text: AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOWF11N70 AOWF11N70 O-262F

    diode b10

    Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs diode b10 MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A

    MOSFET 700V 10A

    Abstract: MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.85 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 50pcs TSM8N70erty MOSFET 700V 10A MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs

    Untitled

    Abstract: No abstract text available
    Text: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP04N60H-H-HF AP04N60 265VAC O-252 100us 100ms