Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y12-40E
LFPAK56
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PDF
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code marking 40E
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y12-40E
LFPAK56
code marking 40E
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PDF
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Si4404DY
Abstract: Si4404DY-T1-E3
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si4404DY
Si4404DY-T1-E3
Si4404DY-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si4404DY
Si4404DY-T1-E3
Si4404DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SUB85N03-04P
Abstract: SUP85N03-04P S-40101 S40101
Text: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested
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SUP/SUB85N03-04P
O-263
O-220AB
SUB85N03-04P
SUP85N03-04P
O-220AB)
O-263,
SUB85N03-04P
SUP85N03-04P
S-40101
S40101
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PDF
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SUB85N03-04P
Abstract: SUP85N03-04P S4010 s40101
Text: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested
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Original
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SUP/SUB85N03-04P
O-263
O-220AB
SUB85N03-04P
SUP85N03-04P
O-220AB)
O-263,
SUB85N03-04P
SUP85N03-04P
S4010
s40101
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PDF
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driver IC for IRF540 MOSFET
Abstract: MOSFET 7121 mosfet 7124 12v incandescent lamp driver
Text: MIC5020 IMCaSL Current-Sensing Low-Side MOSFET Driver General Description Features The MIC5020 low-side MOSFET driver is designed to oper ate at frequencies greater than 100kHz 5kHz PWM tor 2% to 100% duty cycle and is an ideal choice for high-speed applications such as motor control, SMPS (switch mode
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OCR Scan
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MIC5020
100kHz
TheMIC5020
2000pF
175ns.
driver IC for IRF540 MOSFET
MOSFET 7121
mosfet 7124
12v incandescent lamp driver
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PDF
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s40101
Abstract: SUB85N03-04P SUP85N03-04P
Text: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested
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Original
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SUP/SUB85N03-04P
O-263
O-220AB
SUB85N03-04P
SUP85N03-04P
O-220AB)
O-263,
s40101
SUB85N03-04P
SUP85N03-04P
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4404DY
Si4404DY-T1-E3
Si4404DY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si4404DY
Si4404DY-T1-E3
Si4404DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D
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Si4404DY
Si4404DY-T1
Si4404DY-T1--E3
18-Jul-08
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PDF
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Si1302DL
Abstract: Si1302DL-T1-GE3 S83040
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET SOT-323 SC-70 (3-LEADS)
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Si1302DL
OT-323
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
18-Jul-08
S83040
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PDF
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71247
Abstract: SI4404DY
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D
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Si4404DY
Si4404DY-T1
Si4404DY-T1--E3
S-50694--Rev.
18-Apr-05
71247
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PDF
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Si4404DY
Abstract: Si4404DY-T1
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D
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Si4404DY
Si4404DY-T1
Si4404DY-T1--E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Si1302DL
Abstract: diode 2140
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Original
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
18-Jul-08
diode 2140
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PDF
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AN813
Abstract: Si1302DL sc70-3 PCB PAD
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
11-Mar-11
AN813
sc70-3 PCB PAD
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PDF
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Si1302DL
Abstract: SI1302DL-T1-E3 marking code
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Original
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
18-Jul-08
SI1302DL-T1-E3 marking code
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PDF
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SI1302DL-T1-E3 marking code
Abstract: si1302 F MARKING 6PIN
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Original
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI1302DL-T1-E3 marking code
si1302
F MARKING 6PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Original
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Si1302DL
2002/95/EC
SC-70
Si1302DL-T1-E3
Si1302DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si4488DY
Abstract: S3036
Text: Si4488DY New Product Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4488DY
S-01284--Rev.
12-Jun-00
S3036
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET
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Si4488DY
Si4488DY-T1
18-Jul-08
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PDF
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Si4488DY
Abstract: Si4488DY-T1
Text: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET
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Si4488DY
Si4488DY-T1
08-Apr-05
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PDF
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Si4488DY
Abstract: Si4488DY-T1
Text: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET
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Si4488DY
Si4488DY-T1
S-03951--Rev.
26-May-03
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