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    MOSFET 7660 Search Results

    MOSFET 7660 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 7660 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features ̈ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC7660DC FDMC7660DC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC7660DC FDMC7660DC

    7660D

    Abstract: L41B 10-L41B-11 FDMC7660DC
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 25hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7658DP-T1-E3

    Abstract: Si7658DP Si7658DP-T1-GE3 74966 si7658
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 18-Jul-08 74966 si7658

    Si7658DP-T1-E3

    Abstract: Si7658DP
    Text: New Product Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ) 48.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested


    Original     		PDF Si7658DP Si7658DP-T1-E3 08-Apr-05

    76609d

    Abstract: AN9321 HUFA76609D3 HUFA76609D3S HUFA76609D3ST TB334
    Text: HUFA76609D3, HUFA76609D3S Data Sheet November 2000 File Number 4988 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76609D3S HUFA76609D3


    Original     		PDF HUFA76609D3, HUFA76609D3S O-251AA O-252AA HUFA76609D3 766lopment. 76609d AN9321 HUFA76609D3 HUFA76609D3S HUFA76609D3ST TB334

    76609D

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
    Text: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3


    Original     		PDF HUF76609D3, HUF76609D3S O-251AA O-252AA HUF76609D3 76609D AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334

    76609D

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
    Text: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3


    Original     		PDF HUF76609D3, HUF76609D3S O-251AA O-252AA HUF76609D3 76609D AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334

    76609D

    Abstract: AN9321 AN9322 HUFA76609D3ST TB334
    Text: HUFA76609D3ST_F085 Data Sheet November 2008 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-252AA DRAIN FLANGE GATE SOURCE HUFA76609D3ST_F085 Symbol D G Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V


    Original     		PDF HUFA76609D3ST O-252AA 76609D 76609D AN9321 AN9322 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUFA76609D3, HUFA76609D3S TM Data Sheet November 2000 File Number 4988 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76609D3S HUFA76609D3


    Original     		PDF HUFA76609D3, HUFA76609D3S O-251AA O-252AA HUFA76609D3 O-251AA O-252AA 76609D

    76609D

    Abstract: AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
    Text: HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3 Features • Ultra Low On-Resistance


    Original     		PDF HUF76609D3, HUF76609D3S O-251AA O-252AA HUF76609D3 76609D 76609D AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334

    76609D

    Abstract: AN9321 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
    Text: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 09D UF76 9D3 bt A, 0V, 65 m, Packaging JEDEC TO-251AA DRAIN FLANGE eyrds terrpoon , an, gic vel raF wer DRAIN


    Original     		PDF HUF76609D3, HUF76609D3S O-251AA HUF76609D3 76609D AN9321 HUF76609D3 HUF76609D3S HUF76609D3ST TB334

    IRFBA22N50A

    Abstract: transformer 220 25v mosfet 110A
    Text: PD- 95904 IRLBA1304PbF HEXFET Power MOSFET l Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated O Purchase IRLBA1304/P for solder plated option. l Lead-Free


    Original     		PDF IRLBA1304PbF O-220 IRLBA1304/P Super220TM O-220. O-220 O-247 Super-220 IRFBA22N50A transformer 220 25v mosfet 110A

    mosfet 7660

    Abstract: Si7658DP PF435
    Text: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7658DP S-70707Rev. 23-Apr-07 mosfet 7660 PF435

    Si7658DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7658DP 18-Jul-08

    HEXFET pinout

    Abstract: IRLBA1304 Mosfet P 110A,
    Text: PD- 91842A IRLBA1304 HEXFET Power MOSFET l Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated ● Purchase IRLBA1304/P for solder plated option. l l l


    Original     		PDF 1842A IRLBA1304 O-220 IRLBA1304/P Super220TM O-220. O-220 O-247 HEXFET pinout IRLBA1304 Mosfet P 110A,

    Untitled

    Abstract: No abstract text available
    Text: HUF76609D3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models


    Original     		PDF HUF76609D3S O-252AA HUF76609D3ST 76609D HUF76609D3S

    IRLBL1304

    Abstract: Mosfet P 110A, ir 230h
    Text: PD- 91843A IRLBL1304 HEXFET Power MOSFET l l l l l l l >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application condition vs. D2Pak D VDSS = 40V


    Original     		PDF 1843A IRLBL1304 IRLBL1304 Mosfet P 110A, ir 230h

    ir 230h

    Abstract: 41a 934
    Text: PD- 91843 IRLBL1304 HEXFET Power MOSFET l l l l l l l >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application condition vs. D2Pak D VDSS = 40V


    Original     		PDF IRLBL1304 ir 230h 41a 934

    76609D

    Abstract: No abstract text available
    Text: interrii HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance ' rDS ON = 0.16O£2, VQS= 10V • rDS(ON) = °-165£J. VGS = 5V


    OCR Scan     		PDF HUF76609D3, HUF76609D3S O-251AA O-252AA HUF76609D3 HUF76609D3 HUF76609D3S O-251 O-252AA 76609D