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    MOSFET 8A 900V Search Results

    MOSFET 8A 900V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 8A 900V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    W9NK90Z

    Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
    Text: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z


    Original     		STB9NK90Z STFPNK90Z STP9NK90Z STW9NK90Z O-220 O-247 STB9NK90Z STP9NK90Z STF9NK90Z W9NK90Z p9nk90 W9NK90Z equivalent F9NK90Z P9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220 PDF

    W9NK90Z equivalent

    Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
    Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z


    Original     		STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z O-220 O-247 STW9NK90Z STF9NK90Z W9NK90Z equivalent P9NK90 P9NK90Z mosfet 8A 900V TO-220 PDF

    P9NK90

    Abstract: w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z STB9NK90Z
    Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET Features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z 900V <1.3Ω


    Original     		STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z O-220 O-247 STB9NK90Z STP9NK90Z P9NK90 w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z PDF

    W9NK90Z

    Abstract: W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z STP9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z
    Text: STP9NK90Z - STF9NK90Z STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK90Z STF9NK90Z STW9NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V 900 V 900 V < 1.3 Ω < 1.3 Ω < 1.3 Ω 8A 8A


    Original     		STP9NK90Z STF9NK90Z STW9NK90Z O-220/TO-220FP/TO-247 STP9NK90Z O-220 O-220FP O-247 W9NK90Z W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z PDF

    STW8NB90

    Abstract: TJ5A
    Text: STW8NB90 N - CHANNEL 900V - 1.1Ω - 8A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW8NB90 • ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 8A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STW8NB90 O-247 STW8NB90 TJ5A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		8N90L-TA3-T 8N90G-TA3-T QW-R502-470 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		8N90L-TA3-T QW-R502-470 PDF

    8n90

    Abstract: 8n90l
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		O-220 QW-R502-470 8n90 8n90l PDF

    W9NK90Z

    Abstract: MOSFET 900V 8A TO-220 W9NK90Z equivalent STW9NK90Z MOSFET STW9NK90Z P9NK90 STB9NK90Z STP9NK90Z b9nk90z P9NK90Z
    Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A - TO-220/FP-D²PAK-TO-247 Zener-Protected SuperMESH MOSFET Package General features VDSS RDS on 900 900 900 900 <1.3 Ω <1.3 Ω <1.3 Ω <1.3 Ω Type STB9NK90Z STW9NK90Z STP9NK90Z


    Original     		STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z O-220/FP-D PAK-TO-247 STB9NK90Z STP9NK90Z W9NK90Z MOSFET 900V 8A TO-220 W9NK90Z equivalent STW9NK90Z MOSFET STW9NK90Z P9NK90 b9nk90z P9NK90Z PDF

    Untitled

    Abstract: No abstract text available
    Text: STW8NB90 N - CHANNEL 900V - 1 .3û - 8A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB90 • . . . . 900 V R d S oii < 1.45 a Id 8 A TYPICAL RDS(on) = 1.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		STW8NB90 O-247 O-247 P025P PDF

    n-channel 900v 9a

    Abstract: STW8NB90 STH8NB90FI
    Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW8NB90 STH8NB90FI O-247/ISOWATT218 n-channel 900v 9a STW8NB90 STH8NB90FI PDF

    Untitled

    Abstract: No abstract text available
    Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		O-247/ISOWATT218 STW8NB90 STH8NB90FI O-247 PDF

    W8NB90

    Abstract: w8nb st 247 STW8NB90
    Text: STW8NB90 N - CHANNEL 900V - 1.1Ω - 8A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE ST W8NB90 • ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 8 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STW8NB90 O-247 W8NB90 O-247 W8NB90 w8nb st 247 STW8NB90 PDF

    id 0835

    Abstract: STW8NB90 STH8NB90FI
    Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW8NB90 STH8NB90FI O-247/ISOWATT218 id 0835 STW8NB90 STH8NB90FI PDF

    Untitled

    Abstract: No abstract text available
    Text: SSH8N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RoS on = 1.6 ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area < CO II _Q ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V


    OCR Scan     		SSH8N90A PDF

    SSH7N90A

    Abstract: No abstract text available
    Text: SSH7N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 900V Low RDS(ON) : 1.247 Q. (Typ.)


    OCR Scan     		SSH7N90A SSH7N90A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF8N90A A dvanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 900 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ VDS= 900V


    OCR Scan     		SSF8N90A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V


    OCR Scan     		SSF7N90A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V


    OCR Scan     		SSF8N90A 0G3b333 QG3b33M G03b335 PDF

    ssf7n90a

    Abstract: No abstract text available
    Text: SSF7N90A Advanced Power MOSFET FEATURES b v dss • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25^A Max. @ VDS = 900V ■


    OCR Scan     		SSF7N90A ssf7n90a PDF

    yx 801

    Abstract: yx 801 ic IC yx 801 8N90A IF8AA yx+801+led
    Text: SSF8N90A Advanced Power MOSFET FEATURES BVdss “ 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = 1.6 a ■ Lower Input Capacitance lD = 5.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA (Max.) @ VDS = 900V


    OCR Scan     		SSF8N90A yx 801 yx 801 ic IC yx 801 8N90A IF8AA yx+801+led PDF

    SSH8N90A

    Abstract: No abstract text available
    Text: SSH8N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		SSH8N90A SSH8N90A PDF

    SSH7N90A

    Abstract: No abstract text available
    Text: SSH7N90A Advanced Power MOSFET FEATURES B ^ Lower Input Capacitance ^ D S o n = • Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 1.247 Q (Typ.) -4 ■ 900 V - 1.8 Q > Rugged Gate Oxide Technology


    OCR Scan     		SSH7N90A SSH7N90A PDF

    SSH7N90A

    Abstract: No abstract text available
    Text: Advanced SSH7N90A Power MOSFET FEATURES BVDSS - 900 V 1.8 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


    OCR Scan     		SSH7N90A \61tage SSH7N90A PDF