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    MOSFET B20N03 Search Results

    MOSFET B20N03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET B20N03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b20n03

    Abstract: MOSFET B20N03 MTB20N03 MTB20N03Q8 M B20N03 B20n 4V105 Cystek 30V-8A C396Q8
    Text: Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 1/6 CYStech Electronics Corp. N-Channel LOGIC Level Enhancement Mode Power MOSFET MTB20N03Q8 BVDSS ID RDSON max 30 V 8A 20mΩ Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original
    C396Q8 MTB20N03Q8 MTB20N03Q8 UL94V-0 b20n03 MOSFET B20N03 MTB20N03 M B20N03 B20n 4V105 Cystek 30V-8A C396Q8 PDF