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    MOSFET C25 Search Results

    MOSFET C25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET C25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sc1142

    Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN99-773 sc1142 sanyo a75 amplifier a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode PDF

    ir703

    Abstract: SC1405 1N5819 30BQ015 SC1405TS IR7030 IR7811
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 26, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405 3000pF SC1405 IR7811, IR7030 TSSOP-14 ir703 1N5819 30BQ015 SC1405TS IR7811 PDF

    ir703

    Abstract: IR7811 1N5819 30BQ015 SC1405 SC1405TS FDP6035 fet c42
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405 SC1405 3000pF IR7811, IR7030 TSSOP-14 ir703 IR7811 1N5819 30BQ015 SC1405TS FDP6035 fet c42 PDF

    SANYO 1000uF 16V CA

    Abstract: high power fet amplifier schematic IR7811 SANYO 1000uF 35V FDB7030 AC Motor Speed Controller capacitor 10u 16v capacitor 1u 16v sanyo capacitor 1000uf 25v SC1405
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 31, 2000 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405 3000pF SC1405 IR7811, IR7030 TSSOP-14 ECN00-1259 SANYO 1000uF 16V CA high power fet amplifier schematic IR7811 SANYO 1000uF 35V FDB7030 AC Motor Speed Controller capacitor 10u 16v capacitor 1u 16v sanyo capacitor 1000uf 25v PDF

    sc1142

    Abstract: a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405B TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN00-924 sc1142 a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112 PDF

    capacitor 106 35K

    Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


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    MRF21120/D MRF21120R6 capacitor 106 35K 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K PDF

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


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    MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6 PDF

    MRF9180R6

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


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    MRF9180/D MRF9180R6 MRF9180/D PDF

    MRF9120

    Abstract: MRF9120S
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


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    MRF9120/D MRF9120 MRF9120S MRF9120 MRF9120S PDF

    capacitor 226 35K

    Abstract: R 226 35k 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


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    MRF21120/D MRF21120 MRF21120/D capacitor 226 35K R 226 35k 226 35K capacitor PDF

    TH 2190 Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


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    MRF5P21240/D MRF5P21240R6 TH 2190 Transistor PDF

    226 35K capacitor

    Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


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    MRF21120/D MRF21120 226 35K capacitor MRF21120 z40 mosfet 226 35K capacitor 226 35K PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1535T1 AN215A, PDF

    z40 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


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    MRF21120/D MRF21120R6 MRF21120/D z40 mosfet PDF

    125OC

    Abstract: SC1405 SC1405B SC1405TS shottkey diodes shottkey
    Text: SC1405B High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/


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    SC1405B SC1405B 3000pF 1405B -TSSOP-14 TSSOP-14 125OC SC1405 SC1405TS shottkey diodes shottkey PDF

    sc1142

    Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


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    SC1205 SC1205 3000pF MS-012AA ECN99-742 sc1142 IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER PDF

    MJD45H

    Abstract: bg14 *1405
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER PRELIMINARY SC1405C TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405C dual high speed MOSFET Driver provides a complete solution to driving MOSFETS in synchronous converters. The SC1405C features internal


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    SC1405C SC1405C 3000pF 100mV TSSOP-14 ECN00-924 MJD45H bg14 *1405 PDF

    C21B1

    Abstract: MRF9180 MRF9180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


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    MRF9180/D MRF9180R6 C21B1 MRF9180 MRF9180R6 PDF

    MRF6P21190H

    Abstract: AN1955 JESD22 MRF6P21190HR6 A114 A115
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6P21190HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6P21190HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


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    MRF6P21190HR6/D MRF6P21190HR6 MRF6P21190H/D MRF6P21190H AN1955 JESD22 MRF6P21190HR6 A114 A115 PDF

    FERROXCUBE VK200

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    MRF1535T1/D MRF1535T1 MRF1535T1/D FERROXCUBE VK200 PDF

    70N03

    Abstract: on 70n03 package 10U 16V 70N03 P caps 820uf 1N4148 LL42 SC1205 SC1205H SC1205HSTR
    Text: SC1205H High Speed Synchronous Power MOSFET Driver PRELIMINARY POWER MANAGEMENT Description Features K Higher efficiency >90% K Fast rise and fall times (15ns typical with 3000pf The SC1205H is a cost effective, High Drive Voltage, Dual MOSFET Driver designed for switching High and Low


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    SC1205H 3000pf SC1205H TTIB1106-708 820uf 70N03 on 70n03 package 10U 16V 70N03 P caps 820uf 1N4148 LL42 SC1205 SC1205HSTR PDF

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k PDF

    4835 mosfet

    Abstract: 190NC
    Text: Advanced Data High Voltage IGBT IXPN35N100A vC ES ^C25 and MOSFET Switch vCE SAT Short Circuit SOA Capability Sym bol -o GM Q. Gl O- C/D af E/S -o Test C onditions Maxim um Ratings miniBLOC, SOT-227 B E153432 IGBT MOSFET 1000 1000 1000 1000 V v v*C G R T j = 25°C to 150°C


    OCR Scan
    IXPN35N100A OT-227 E153432 4835 mosfet 190NC PDF

    sc1142

    Abstract: diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW SC1205 sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010
    Text: S^SEMTECH WA S' 4WMW PRELIMINARY - December 7, 1999 SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


    OCR Scan
    SC1205 TEL805-498-2111 SC1205 3000pF 12x16 ECN99-742 sc1142 diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010 PDF