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    MOSFET C25 / 0 Search Results

    MOSFET C25 / 0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET C25 / 0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MURS1100

    Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
    Text: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3


    Original     		PDF MAX1865T 1000uF VP4-0047 680uF 330uF FZT749 EC10QS06 MURS1100 FDS6912A MURS1100 SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100

    Untitled

    Abstract: No abstract text available
    Text: LX1675 EVAL KIT USER GUIDE LX1675 STANDARD EVALUATION KIT USER GUIDE LX1675 3 PWM DC-DC Buck Converters and Single LDO Controller Copyright 2002 Rev. 1.0a, 2006-02-24 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1675 ERJ-3EKF3571V ERJ-3EKF1691V ERJ-3EKF1181V ERJ-3GET0R00V ERJ-3EKF1003V ERJ-3EKF6652V

    Untitled

    Abstract: No abstract text available
    Text: 19-3034; Rev 0; 10/03 Dual-Phase, Parallelable, Average-Current-Mode Controllers Features ♦ +4.75V to +5.5V or +8V to +28V Input Voltage Range Differential sensing enables accurate control of the output voltage, while adaptive voltage positioning provides


    Original     		PDF 500kHz MO150.

    MAX5038EAI12

    Abstract: MAX5041EAI MAX5037 MAX5038 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041
    Text: 19-2514; Rev 2; 4/03 Dual-Phase, Parallelable, Average Current-Mode Controllers Features ♦ +4.75V to +5.5V or +8V to +28V Input Voltage Range ♦ Up to 60A Output Current ♦ Internal Voltage Regulator for a +12V or +24V Power Bus ♦ True Differential Remote Output Sensing


    Original     		PDF 250kHz 500kHz MAX5038) MAX5041) MO150. MAX5038EAI12 MAX5041EAI MAX5037 MAX5038 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041

    MAX5038EAI12

    Abstract: MAX5037 MAX5038 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041 C26-C30
    Text: 19-2514; Rev 3; 8/04 Dual-Phase, Parallelable, Average Current-Mode Controllers The MAX5038/MAX5041 dual-phase, PWM controllers provide high-output-current capability in a compact package with a minimum number of external components. The MAX5038/MAX5041 utilize a dual-phase,


    Original     		PDF MAX5038/MAX5041 500kHz MO150. MAX5038EAI12 MAX5037 MAX5038 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041 C26-C30

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D MRF186

    C3C11

    Abstract: MAX5038EAI12 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041 MAX5041EAI MAX5037 MAX5038
    Text: 19-2514; Rev 1; 11/02 Dual-Phase, Parallelable, Average Current-Mode Controllers The MAX5038/MAX5041 dual-phase, PWM controllers provide high-output-current capability in a compact package with a minimum number of external components. The MAX5038/MAX5041 utilize a dual-phase,


    Original     		PDF MAX5038/MAX5041 500kHz MAX5038/MAX5041 C3C11 MAX5038EAI12 MAX5038EAI15 MAX5038EAI18 MAX5038EAI25 MAX5038EAI33 MAX5041 MAX5041EAI MAX5037 MAX5038

    MAX5037A

    Abstract: MAX5038A MAX5038AEAI12 MAX5038AEAI15 MAX5038AEAI18 MAX5038AEAI25 MAX5038AEAI33 MAX5041A
    Text: 19-3034; Rev 0; 10/03 Dual-Phase, Parallelable, Average-Current-Mode Controllers Features ♦ +4.75V to +5.5V or +8V to +28V Input Voltage Range ♦ Up to 60A Output Current ♦ Internal Voltage Regulator for a +12V or +24V Power Bus ♦ True Differential Remote Output Sensing


    Original     		PDF 250kHz 500kHz MAX5038A MO150. MAX5037A MAX5038AEAI12 MAX5038AEAI15 MAX5038AEAI18 MAX5038AEAI25 MAX5038AEAI33 MAX5041A

    NPN Transistor TO92 40V 200mA

    Abstract: ELECTROLYTIC capacitor 330 35v transformer 220 25v transistor 1002 of capacitor 33uf 35v FZT789A C25 schottky 25MV100AX diode 0102 EC05Q04
    Text: ADSL Modem 8V to 18V INPUT C3 1uF C5 330uF 35V MV-AX 3x D1 CMPSH-3 13 R1 68k C1 15nF 2 20 V+ 19 VL ILIM BST COMP DH C2 100pF 17 LX 16 DL VL GND C6 4.7uF 35V 18 15 C4 0.1uF N1A 1/2 FDS6930A R3 4.7 R4 4.7 1,2 N1B 1/2 FDS6930A 14 OUT1 1 POK FB1 B2 3.3V@1A 12,11


    Original     		PDF 330uF 100pF FDS6930A 680uF FZT789A 2N3905 MBRS1100 NPN Transistor TO92 40V 200mA ELECTROLYTIC capacitor 330 35v transformer 220 25v transistor 1002 of capacitor 33uf 35v FZT789A C25 schottky 25MV100AX diode 0102 EC05Q04

    0.1uF Capacitor Ceramic

    Abstract: 10uF CAPACITOR JOLO SPCJ-123-01 smd schottky diode s4 SOD-123 p28 npn transistor smd p18 npn transistor smd HDR-2X3 J1 TRANSISTOR DIODE SOT-23 PACKAGE SPCJ-123-01 Diode smd s6 46
    Text: ISL6568EVAL1 REV C Bill of Material Top Layer Components Qty Reference Value 1 C1 22pF Capacitor, Ceramic, 50V, X7R, 10% Various 0805 1 C2 6800pF Capacitor, Ceramic, 50V, X7R, 10% Various 0805 3 C3, C66, C67 OPEN Capacitor, Ceramic Various 0603 1 C4 OPEN Capacitor, Ceramic


    Original     		PDF ISL6568EVAL1 6800pF 1000pF R51-R63, 1/16W 0.1uF Capacitor Ceramic 10uF CAPACITOR JOLO SPCJ-123-01 smd schottky diode s4 SOD-123 p28 npn transistor smd p18 npn transistor smd HDR-2X3 J1 TRANSISTOR DIODE SOT-23 PACKAGE SPCJ-123-01 Diode smd s6 46

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 0, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 NIPPON CAPACITORS

    MOSFET C25

    Abstract: c25 mosfet
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


    Original     		PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MOSFET C25 c25 mosfet

    C65 004

    Abstract: W83303AG 1000u capacitors CAP 10U 50V W83310S-R2 W8303AG 98c52 Capacitor 1000u marking 2u MOSFET C65
    Text: W83303AD/W83303AG Winbond Advanced ACPI Controller W83303AD/W83303AG W83303AD/W83303AG W83303AD/AG Data Sheet Revision History Pages Dates Version Version on Web Main Contents N.A. All of the versions before 0.50 are for internal use. 1 N.A. 2 N.A. 10/25/04


    Original     		PDF W83303AD/W83303AG W83303AD/AG W8303AG C65 004 W83303AG 1000u capacitors CAP 10U 50V W83310S-R2 98c52 Capacitor 1000u marking 2u MOSFET C65

    MARKING CODE c25

    Abstract: c25 mosfet CMLM0205 sot-563 MOSFET D1 MOSFET C25
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


    Original     		PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MARKING CODE c25 c25 mosfet sot-563 MOSFET D1 MOSFET C25

    power 22E

    Abstract: 100KPF ntc 10K e-bike Hall 22e NTC thermister 100K 1000uf/63v battery ebike SCK thermister fqp85n06
    Text: 4 3 2 VCC_5V D R3 4.7 K 1 R4 4.7 K HS3 HS2 HS1 C2 100pF C3 100pF 1 PhaseA Phase A D J3 J2 1 3 2 1 J4 5 4 3 2 1 J1 TP1 Throttle R1 100E R2 4.7 K VREF 2 VCC_3V3 1 1 5 Throttle Phase B J5 C1 0.01uF Throttle Pot PhaseB 1 C4 100pF PhaseC Phase C HALL Sensor Connection to Motor


    Original     		PDF 100pF Z8FMC16100 AN0260 1N4002 LM1117 V/SOT223 LM1117/TO power 22E 100KPF ntc 10K e-bike Hall 22e NTC thermister 100K 1000uf/63v battery ebike SCK thermister fqp85n06

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT

    transistor c36

    Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet

    DI-70

    Abstract: TRANSISTOR R52 C22-C24 BAV19WS D101 DI-69 DL4002 DPA424P "Power over Ethernet" VR51
    Text: Design Idea DI-70 DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 12.94 W 34-57 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • • •


    Original     		PDF DI-70 DPA424P DI-70 TRANSISTOR R52 C22-C24 BAV19WS D101 DI-69 DL4002 DPA424P "Power over Ethernet" VR51

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6

    d1n5406

    Abstract: 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474
    Text: AND8155/D NCP1231 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1231 implements a standard current mode control architecture. It’s an ideal candidate for applications


    Original     		PDF AND8155/D NCP1231 d1n5406 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474

    Z25 transistor

    Abstract: Z27 transistor
    Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.


    Original     		PDF MHT1001H MHT1001HR5 Z25 transistor Z27 transistor

    CW12010T0050GBK

    Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
    Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550

    NT 407F

    Abstract: SM0603 35ME330AX SANYO RoHS ISL8104 ISL8104EVAL1Z TB417 BSC030N03LS BSC080N03LS IHLP5050FD-R68 MOSFET TEST SIMPLE Procedures
    Text: Using the ISL8104 PWM Controller Evaluation Board Application Note Introduction The ISL8104 is a simple single-phase PWM controller for a synchronous buck converter with integrated MOSFET driver that operates from +8V to +14.4V bias supply voltage. The


    Original     		PDF ISL8104 ISL8104EVAL2Z NT 407F SM0603 35ME330AX SANYO RoHS ISL8104EVAL1Z TB417 BSC030N03LS BSC080N03LS IHLP5050FD-R68 MOSFET TEST SIMPLE Procedures

    MOSFET marking Z4

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4