IRLR3705Z
Abstract: IRLU3705Z irlru3705z
Text: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V
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IRLR3705Z
IRLU3705Z
AN-994
IRLR3705Z
IRLU3705Z
irlru3705z
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IRLR3705Z
Abstract: IRLU3705Z irlru3705z
Text: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V
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IRLR3705Z
IRLU3705Z
AN-994
IRLR3705Z
IRLU3705Z
irlru3705z
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TH 2190 mosfet
Abstract: IRFu2307z IRFR2307Z
Text: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description
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IRFR2307Z
IRFU2307Z
AN-994
TH 2190 mosfet
IRFu2307z
IRFR2307Z
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TH 2190 mosfet
Abstract: th 2190 IRFR2307Z IRFU2307Z
Text: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description
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IRFR2307Z
IRFU2307Z
AN-994
TH 2190 mosfet
th 2190
IRFR2307Z
IRFU2307Z
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Untitled
Abstract: No abstract text available
Text: PD - 95090 IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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IRLR3915PbF
IRLU3915PbF
AN-994.
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AN-1005
Abstract: D-PAK package
Text: PD - 95090A IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V
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5090A
IRLR3915PbF
IRLU3915PbF
AN-994.
AN-1005
D-PAK package
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U3114
Abstract: IRLR3114Z AN-1005 IRLU3114ZPBF IRLR3114ZPBF
Text: PD - 97284 AUTOMOTIVE MOSFET Features l l l l l l IRLR3114ZPbF IRLU3114ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level D VDSS = 40V
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IRLR3114ZPbF
IRLU3114ZPbF
U3114
IRLR3114Z
AN-1005
IRLU3114ZPBF
IRLR3114ZPBF
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IRFR3504
Abstract: IRFU3504
Text: PD - 95315A IRFR3504PbF IRFU3504PbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V
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5315A
IRFR3504PbF
IRFU3504PbF
AN-994.
IRFR3504
IRFU3504
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AN-994
Abstract: EIA-541 IRFR120 IRFR3710Z IRFU120 IRFU3710Z
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
AN-994
EIA-541
IRFR120
IRFR3710Z
IRFU120
IRFU3710Z
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Untitled
Abstract: No abstract text available
Text: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5m!
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IRFR4104
IRFU4104
AN-994
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IRFR1010Z
Abstract: No abstract text available
Text: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G
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IRFR1010Z
IRFU1010Z
AN-994
IRFR1010Z
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P916A
Abstract: FET marking code FET MARKING QG
Text: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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IRLR8503PbF
IRLR8503PbF
IRLR8503
EIA-481
EIA-541.
EIA-481.
P916A
FET marking code
FET MARKING QG
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IRFR540Z
Abstract: IRFU540Z P916A
Text: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ
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IRFR540Z
IRFU540Z
IRFR540Z
IRFU540Z
P916A
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VG 96924
Abstract: IRFR48Z IRFU48Z
Text: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description
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IRFR48Z
IRFU48Z
AN-994
VG 96924
IRFR48Z
IRFU48Z
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IRFR4104
Abstract: IRFU4104
Text: PD - 95425A IRFR4104PbF IRFU4104PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V
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5425A
IRFR4104PbF
IRFU4104PbF
AN-994
IRFR4104
IRFU4104
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U3710
Abstract: IRFR3710Z IRFU3710Z IRFR3710
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
U3710
IRFR3710Z
IRFU3710Z
IRFR3710
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Untitled
Abstract: No abstract text available
Text: PD - 95521 IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V
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IRFR3504ZPbF
IRFU3504ZPbF
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 95315 IRFR3504PbF IRFU3504PbF AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description D
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IRFR3504PbF
IRFU3504PbF
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
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IRLR2905Z
Abstract: IRLU2905Z
Text: PD - 95848 IRLR2905Z IRLU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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IRLR2905Z
IRLU2905Z
AN-994
IRLR2905Z
IRLU2905Z
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AN-1005
Abstract: IRFR540ZPBF
Text: PD - 96141 AUTOMOTIVE MOSFET IRFR540ZPbF IRFU540ZPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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IRFR540ZPbF
IRFU540ZPbF
AN-1005
IRFR540ZPBF
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IRFR1010Z
Abstract: IRf 48 MOSFET IRFU1010Z
Text: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G
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IRFR1010Z
IRFU1010Z
AN-994
IRFR1010Z
IRf 48 MOSFET
IRFU1010Z
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AN-1005
Abstract: TO-251AA
Text: PD - 97284 AUTOMOTIVE MOSFET Features l l l l l l IRLR3114ZPbF IRLU3114ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level D VDSS = 40V
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IRLR3114ZPbF
IRLU3114ZPbF
AN-1005
TO-251AA
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CA3130
Abstract: pin diagram of IC ca3130 IC1 CA3130 CA3130A CA3130AS CA3130T IC CA3130 application pin diagram of ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER 200-microampere
Text: H A R R IS SE H IC O N D ff H A R b lE SECTOR R I M3Q5S71 D TflM IHAS CA3130 S SEMICONDUCTOR BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features • 004bE77 Description MOSFET Input Stage Provides: - Very High Z| * 1.5 TO 1 3 x 1012fi) lyp .
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OCR Scan
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M3Q2S71
004b277
1012Q)
CA3130,
CA3130A
100kHz
AN66M
CAJ130
Po-150mW
CA3600E)
CA3130
pin diagram of IC ca3130
IC1 CA3130
CA3130AS
CA3130T
IC CA3130 application
pin diagram of ca3130
IC1 CA3130 CURRENT TO VOLTAGE CONVERTER
200-microampere
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