DIODE l02
Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ*
CMLDM7002AJ
2N7002
CMLDM7002A:
200mA,
DIODE l02
code l02
2n7002 pinout
marking 02J
sot transistor pinout
marking l02
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CMLDM7002AJ
Abstract: 2N7002 CMLDM7002A marking 02J
Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ
OT-563
CMLDM7002AJ
2N7002
200mA,
400mA
CMLDM7002A
marking 02J
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CMXDM7002A
Abstract: X02A 2N7002
Text: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMXDM7002A
OT-26
CMXDM7002A
2N7002
500mA
500mA,
200mA
200mA,
400mA
05-December
X02A
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c702a
Abstract: No abstract text available
Text: CMPDM7002A SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMPDM7002A
2N7002
C702A
OT-23
500mA
500mA,
200mA
200mA,
c702a
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DIODE l02
Abstract: dual mosfet "marking code 30" marking l02
Text: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMLDM7002A
2N7002
OT-563
500mA
500mA,
200mA
200mA,
400mA
01-February
DIODE l02
dual mosfet "marking code 30"
marking l02
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X02A
Abstract: CMXDM7002A 2N7002
Text: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMXDM7002A
OT-26
CMXDM7002A
2N7002
500mA,
200mA
200mA,
400mA
14-November
X02A
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RD10
Abstract: WTV3585
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
03-Apr-07
RD10
WTV3585
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Untitled
Abstract: No abstract text available
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
OT-26
03-Apr-07
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CMLDM7002AG
Abstract: CMLDM7002AJ CMLDM7002A
Text: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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CMLDM7002A
CMLDM7002AG*
CMLDM7002AJ
OT-563
200mA
CMLDM7002A:
CMLDM7002AG
CMLDM7002AJ
CMLDM7002A
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WTL2622
Abstract: No abstract text available
Text: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA
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WTL2622
520mAMPERES
OT-26
300us,
19-Sep-05
WTL2622
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14916AA-N •General description ■Features ELM14916AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14916AA-N
ELM14916AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14912AA-N •General description ■Features ELM14912AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14912AA-N
ELM14912AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14914AA-N •General description ■Features ELM14914AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage
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ELM14914AA-N
ELM14914AA-N
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Untitled
Abstract: No abstract text available
Text: MA2518C10000000 Dual N-Ch 20V Fast Switching MOSFET s Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4
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MA2518C10000000
D032610
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IRF620S
Abstract: No abstract text available
Text: IRF620S Power MOSFET VDSS = 200V, RDS on = 0.80 ohm, ID = 5.2 A D Drain G Gate Source S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise IGSS Gate to Source Leakage Current VGS(th) Gate Threshold Voltage Gate Charge
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IRF620S
25VDC,
100VDC,
160VDC,
10VDC
IRF620S
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p-channel mosfet
Abstract: P CHANNEL POWER MOSFET P-Channel MOSFET -800v smd transistor 26
Text: Transistors IC SMD Type Complementary MOSFET Half-Bridge N- and P-Channel KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25
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KI4500BDY
p-channel mosfet
P CHANNEL POWER MOSFET
P-Channel MOSFET -800v
smd transistor 26
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smd diode 74a
Abstract: BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr
Text: IC IC SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage
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KRF7313
smd diode 74a
BR 26 diode
smd 8a 046
KRF7313
58A1
78 DIODE SMD
smd transistor 26
smd diode fr
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4501ss
Abstract: rd15 WTK4501 RD 15 4501s
Text: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:
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WTK4501
07-May-07
4501ss
rd15
WTK4501
RD 15
4501s
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type N- and P-Channel 20-V D-S MOSFET KI4511DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25
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KI4511DY
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smd diode 39a
Abstract: No abstract text available
Text: IC IC SMD Type P-Channel 2.5-V G-S MOSFET KI5441DC Features TrenchFET Power MOSFET 2.5-V Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150
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KI5441DC
smd diode 39a
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WTN9973
Abstract: No abstract text available
Text: WTN9973 Surface Mount N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.9 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN 60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE Features: 1 2 3 SOT-223 *Super high dense cell design for low RDS ON RDS(ON)<80mΩ@VGS=10V
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WTN9973
OT-223
OT-223
19-Apr-05
WTN9973
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2sk2859
Abstract: No abstract text available
Text: MOSFET SMD Type N-Channel Silicon MOSFET 2SK2859 Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage
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2SK2859
2sk2859
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Untitled
Abstract: No abstract text available
Text: 6HP04MH Ordering number : ENA0368 P-Channel Silicon MOSFET 6HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
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6HP04MH
ENA0368
900mm2â
6HP04MH/D
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Untitled
Abstract: No abstract text available
Text: 6HN04MH Ordering number : ENA0365A N-Channel Silicon MOSFET 6HN04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
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6HN04MH
ENA0365A
900mm2â
6HN04MH/D
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