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    MOSFET GHZ Search Results

    MOSFET GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    80 watt hf mosfet

    Abstract: MRF185
    Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET


    Original     		MRF185/D MRF185 80 watt hf mosfet MRF185 PDF

    MRF185

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET


    Original     		MRF185/D MRF185 MRF185/D* MRF185 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		MRF185 31JUL04 31JAN05 PDF

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor PDF

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor PDF

    MRF185

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		MRF185/D 31JAN05 MRF185 MRF185 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		MRF185/D MRF185 DEVICEMRF185/D PDF

    905-170

    Abstract: MRF3010 VK200 VK20019-4B
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		MRF3010/D MRF3010 MRF3010 MRF3010/D PDF

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original     		MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PE84140 PE84140 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PE4141 PE4141 PDF

    marking code 8 lead msop package analog devices

    Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PE4141 PE4141 marking code 8 lead msop package analog devices marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking marking code 8 lead msop package PDF

    quad mosfet array

    Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
    Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PE84140 PE84140 quad mosfet array 731 MOSFET PE84140-EK 8 mosfet array F617 PDF

    Yaesu

    Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable


    Original     		PE4141 PE4141 Yaesu marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices PDF

    PE4141

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PE4141 PE4141 PDF

    PE84140

    Abstract: PE84140-EK peregrine cmos mixer 3v quad MOSFET ARRAY
    Text: Advanced Information PE84140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array


    Original     		PE84140 PE84140 PE84140-EK peregrine cmos mixer 3v quad MOSFET ARRAY PDF

    matching mosfet

    Abstract: PE84140 PE84140-EK
    Text: Advanced Information PE84140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array


    Original     		PE84140 PE84140 matching mosfet PE84140-EK PDF

    ETC1,6-4-2-3

    Abstract: ETC1-1-13 PE4140 PE4140-00 PE4140-01 PE4140-02 PE4140-EK PE4140-06MLP3X3-3000C F617-00
    Text: ADVANCE INFORMATION PE4140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array


    Original     		PE4140 PE4140 ETC1,6-4-2-3 ETC1-1-13 PE4140-00 PE4140-01 PE4140-02 PE4140-EK PE4140-06MLP3X3-3000C F617-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		MRF185 MRF185 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		MRF185 MRF185 PDF

    Power MOSFET TT 2146

    Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
    Text: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET


    OCR Scan     		RF185/D MRF185 Power MOSFET TT 2146 transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET PDF

    j718

    Abstract: VK200/10-3B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    OCR Scan     		MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B PDF

    mosfet 6 ghz

    Abstract: 2.4 ghz mosfet mosfet ghz
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF183 Advance Information The RF MOSFET Line M otorola Preferred Device RF Power Field Effect Transistors 45 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs


    OCR Scan     		MRF183 MRF183 mosfet 6 ghz 2.4 ghz mosfet mosfet ghz PDF