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    MOSFET IRF460 Search Results

    MOSFET IRF460 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf460

    Abstract: No abstract text available
    Text: PD-90467A IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF460 500V 0.27Ω ID 21A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90467A IRF460 O-204AA/AE) O-204AE irf460

    MOSFET IRF460

    Abstract: IRF460 APPLICATIONS OF IRF460 irf460 switching diode 500v 10A
    Text: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF460 O-204AA/AE) parameter252-7105 MOSFET IRF460 IRF460 APPLICATIONS OF IRF460 irf460 switching diode 500v 10A

    Untitled

    Abstract: No abstract text available
    Text: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF460 O-204AA/AE)

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irf460lc

    Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		PDF IRFP460LC stanFPE30 irf460lc IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L

    irf460lc

    Abstract: IRFP460LC IRFPE30 irf46
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		PDF IRFP460LC IRFPE30 irf460lc IRFP460LC IRFPE30 irf46

    irf460lc

    Abstract: IRF460L IRFP460LC IRFPE30 IRF460
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		PDF IRFP460LC 12-Mar-07 irf460lc IRF460L IRFP460LC IRFPE30 IRF460

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		PDF IRFP460LC 08-Mar-07

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    irf*234 n

    Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
    Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5


    OCR Scan     		PDF 4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


    OCR Scan     		PDF

    IRFBE40

    Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
    Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800


    OCR Scan     		PDF IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    MOSFET IRF460

    Abstract: IRF460 IRF462 APPLICATIONS OF IRF460 MOSFET 1rf460
    Text: HE D I 4055455 O O O ^ O t b | Data Sheet No. PD-9.465B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED H E X F E T T R A N S IS T O I R R S F 4 6 0 IR F 4 G S IM-CHANNEL Product Summary 500 Volt, 0.27 Ohm, HEXFET


    OCR Scan     		PDF G-189 IRF460, IRF462 QGCHE13 G-190 MOSFET IRF460 IRF460 APPLICATIONS OF IRF460 MOSFET 1rf460

    MOSFET IRF460

    Abstract: IRF460 irf462
    Text: 4302571 □DS3cî7a 413 • H A R R I HAS S I R F 4 6 0 I R F 4 6 2 N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 21A and 19A, 500V B O TTO M VIE W • rD S °n = 0 -2 7 0 and 0 .3 5 fl • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF 43G2271 MOSFET IRF460 IRF460 irf462

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF