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    MOSFET IRFPC50 Search Results

    MOSFET IRFPC50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFPC50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFPC50A

    Abstract: No abstract text available
    Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50A O-247AC Fac10) IRFPC50A

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50 1/W54)

    Untitled

    Abstract: No abstract text available
    Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50A O-247AC 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50

    IRFPC50

    Abstract: SHD218513 SHD218513A SHD218513B
    Text: SHD218513 SHD218513A SHD218513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.60 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50 IRFPC50 SHD218513 SHD218513A SHD218513B

    IRFPC50A

    Abstract: No abstract text available
    Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50A O-247AC 12-Mar-07 IRFPC50A

    035H

    Abstract: IRFPE30
    Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50APbF O-247AC 12-Mar-07 035H IRFPE30

    035H

    Abstract: IRFPE30
    Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50APbF O-247AC IRFPE30 035H IRFPE30

    035H

    Abstract: IRFPE30 4.5V TO 100V INPUT REGULATOR
    Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50APbF O-247AC 035H IRFPE30 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFPC50APbF O-247AC 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω


    Original     		PDF IRFPC50LC 08-Mar-07

    IRFPC50LC

    Abstract: IRFPE30
    Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω


    Original     		PDF IRFPC50LC IRFPE30 IRFPC50LC IRFPE30

    Week 1233

    Abstract: diode lt 247 marking code 11A IRFPC50LC IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		PDF IRFPC50LC stanFPE30 Week 1233 diode lt 247 marking code 11A IRFPC50LC IRFPE30

    IRFPC50LC

    Abstract: IRFPE30
    Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω


    Original     		PDF IRFPC50LC 12-Mar-07 IRFPC50LC IRFPE30

    IRFPC50A

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		PDF IRFPC50A, SiHFPC50A 2002/95/EC O-247AC 11-Mar-11 IRFPC50A

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		PDF IRFPC50A, SiHFPC50A 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		PDF IRFPC50A, SiHFPC50A 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		PDF IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC


    Original     		PDF IRFPC50, SiHFPC50 O-247AC O-220AB O-247AC O-218 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		PDF IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 11-Mar-11

    SiHFPC50LC

    Abstract: IRFPC50LC
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		PDF IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC

    IRFPC50LC

    Abstract: SiHFPC50LC
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		PDF IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		PDF IRFPC50LC, SiHFPC50LC 12-Mar-07

    IRFPC50A

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFPC50A, SiHFPC50A O-247 18-Jul-08 IRFPC50A