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    MOSFET K 2865 Search Results

    MOSFET K 2865 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET K 2865 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


    Original     		PDF BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    BUK107-50GL

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50GL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50GL SC13a SCA54 137087/1200/01/pp11 BUK107-50GL

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage

    4466 8 pin mosfet pin voltage

    Abstract: 501 mosfet transistor BUK107-50DL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DL SC13a SCA54 137087/1200/02/pp12 4466 8 pin mosfet pin voltage 501 mosfet transistor BUK107-50DL

    intel 845 MOTHERBOARD pcb CIRCUIT diagram

    Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
    Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL128/D Mar-2002 r14525 DL128 intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A

    1n4740 MOTOROLA

    Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
    Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740

    PAL 007 pioneer mosfet

    Abstract: PAL 007 pioneer DS50PCI402 lm833 Ultrasonic Distance lcd LMP8358 photoconductive diode lcd dvi 1185 011 03 pioneer PAL 007 A ADC08D3000 PAL 0007 E MOSFET
    Text: Industrial Systems Solutions Guide national.com/industrial 2010 Vol. 1 Industrial Applications Amplifiers Data Converters Clock and Timing Solutions Interface Solutions Thermal Management Power Management HVDC Bus DC-DC Converter Energy Management Unit 3.3V


    Original     		PDF

    BP317

    Abstract: BYC8-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC8-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC8-600 SCA56 137027/600/01/pp7 BP317 BYC8-600

    05ng

    Abstract: No abstract text available
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4805N NTD4805N/D 05ng

    369D

    Abstract: NTD4805N NTD4805NT4G
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4805N NTD4805N/D 369D NTD4805N NTD4805NT4G

    BYC5-600

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC5-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC5-600 SCA56 137027/600/01/pp7 BYC5-600 BP317

    mosfet K 2865

    Abstract: BF1107 ic sc 6200 passive loopthrough
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan     		PDF BF1107 115102/00/01/pp8 mosfet K 2865 BF1107 ic sc 6200 passive loopthrough

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS TEA1207T High efficiency DC/DC converter Preliminary specification File under Integrated Circuits, IC03 Philips Sem iconductors 1999 Jan 14 PHILIPS Philips Semiconductors Preliminary specification TEA1207T High efficiency DC/DC converter


    OCR Scan     		PDF TEA1207T SCA61 465002/750/01/pp16

    mosfet K 2865

    Abstract: blf146 sot121
    Text: N AUER PHILIPS/DISCRETE DfaE D M bb53^31 001330? DEVELOPMENT DATA BLF146 T h is data sheet contains advance information and specifications are subject to change w ithout notice. 86D 01064 D 7 - - 31 - I 3 R.F. POWER MOSFET N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters


    OCR Scan     		PDF BLF146 OT-121) OT-121. bbS3131 QG13B0M mosfet K 2865 blf146 sot121

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE QkE P • 86D 01064 L 1353^31 0013303 DEVELOPMENT DATA |f This data sheet contains advance information and specifications are subject to change without notice. BLF146 D T v y < R.F. POWER MOSFET N-channel enhancement mode vertical D -M O S transistor intended for use in professional transmitters


    OCR Scan     		PDF BLF146 OT-121)

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: STW8NB90 N - CHANNEL 900V - 1 .3û - 8A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB90 • . . . . 900 V R d S oii < 1.45 a Id 8 A TYPICAL RDS(on) = 1.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STW8NB90 O-247 O-247 P025P

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


    OCR Scan     		PDF