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    MOSFET MARKING CODE KE Search Results

    MOSFET MARKING CODE KE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE KE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP0610K-T1-E

    Abstract: TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3

    VISHAY SOT LOT CODE

    Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 11-Mar-11 VISHAY SOT LOT CODE marking 6k sot-23 package sot23 footprint TP0610K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)


    Original     		PDF TSM6N50 ITO-220 O-251 O-252 TSM6N50CI 50pcs TSM6N50CP TSM6N50CH

    TSM60N900CP

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs TSM60N900CP

    Untitled

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs

    TSM60N600CP

    Abstract: No abstract text available
    Text: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N600 ITO-220 O-251 O-252 TSM60N600CI 50pcs TSM60N600CH 75pcs TSM60N600CP

    Untitled

    Abstract: No abstract text available
    Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N380 ITO-220 O-251 O-252 TSM70N380CI 50pcs TSM70N380CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs

    TSM60N380CP

    Abstract: TSM60N380CH TSM60N380CI
    Text: TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.38 Ω Qg 20.5 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology


    Original     		PDF TSM60N380 ITO-220 O-251 O-252 TSM60N380CI 50pcs TSM60N380CH 75pcs TSM60N380CP

    Untitled

    Abstract: No abstract text available
    Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology


    Original     		PDF TSM70N380 ITO-220 O-251 O-252 TSM70N380CI 50pcs TSM70N380CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ●


    Original     		PDF TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N10 100V N-Channel Power MOSFET TO-252 DPAK TO-251S (IPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 100 V RDS(on)(max) 13 mΩ Qg 145 nC Block Diagram Features ● ● ● Low On-Resistance Low Input Capacitance


    Original     		PDF TSM70N10 O-252 O-251S TSM70N10CP TSM70N10CH 75pcs 900ppm

    N-Channel

    Abstract: No abstract text available
    Text: TSM600N25E 250V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 250 V RDS(on)(max) 0.6 Ω Qg 8.4 nC Features ● ● Block Diagram 100% avalanche tested Improved ESD performance


    Original     		PDF TSM600N25E O-251 O-252 TSM600N25ECH 75pcs TSM600N25ECP 900ppm N-Channel

    irlru9343

    Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
    Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency


    Original     		PDF IRLR9343 IRLU9343 IRLU9343-701 AN-994 irlru9343 IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B

    Untitled

    Abstract: No abstract text available
    Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency


    Original     		PDF IRLR9343 IRLU9343 IRLU9343-701 AN-994

    IRLR4343

    Abstract: IRLU4343 IRLU4343-701
    Text: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency


    Original     		PDF IRLR4343 IRLU4343 IRLU4343-701 AN-994 IRLR4343 IRLU4343 IRLU4343-701

    IRLR9343

    Abstract: IRLU9343 IRLU9343-701
    Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency


    Original     		PDF IRLR9343 IRLU9343 IRLU9343-701 AN-994 IRLR9343 IRLU9343 IRLU9343-701

    IRLU4343-701

    Abstract: IRLR4343 IRLU4343
    Text: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency


    Original     		PDF IRLR4343 IRLU4343 IRLU4343-701 AN-994 IRLU4343-701 IRLR4343 IRLU4343

    TSM7N65A

    Abstract: No abstract text available
    Text: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)


    Original     		PDF TSM7N65A ITO-220 50pcs TSM7N65ACI TSM7N65A

    Untitled

    Abstract: No abstract text available
    Text: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Key Parameter Performance Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 Parameter Value Unit VDS -20 V RDS on (max) VGS = -4.5V 140 VGS = -2.5V 200 VGS = -1.8V 300 Qg Features mΩ


    Original     		PDF TSM3911D OT-26 TSM3911DCX6 900ppm 1500ppm

    P-Channel

    Abstract: No abstract text available
    Text: TSM180P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 18 VGS = -4.5V 30 Qg 14.6 nC Block Diagram


    Original     		PDF TSM180P03CS TSM180P03CS 900ppm 1500ppm 1000ppm P-Channel