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    MOSFET MARKING CODE NC Search Results

    MOSFET MARKING CODE NC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code


    Original     		PDF Si5980DU 2002/95/EC Si5980DUllectual 18-Jul-08

    TP0610K-T1-E3

    Abstract: S 1476 TP0610K TP0610K-T1-GE3 S10 SOT23 MARKING
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1-E3 S 1476 TP0610K TP0610K-T1-GE3 S10 SOT23 MARKING

    TP0610K-T1-E3

    Abstract: TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3

    TP0610K-T1-E

    Abstract: TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3

    TP0610K-T1

    Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1 TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3

    TP0610K-T1-E3

    Abstract: TP0610KT1E3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 18-Jul-08 TP0610K-T1-E3 TP0610KT1E3

    VISHAY SOT LOT CODE

    Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 11-Mar-11 VISHAY SOT LOT CODE marking 6k sot-23 package sot23 footprint TP0610K-T1-E3

    TP0610K-T1-E3

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 18-Jul-08 TP0610K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    NCP81061

    Abstract: NCP6151
    Text: NCP81061 VR12 Compatible Synchronous Buck Dual MOSFET Driver http://onsemi.com MARKING DIAGRAM 1 QFN16 CASE 485AW Features • • Typical Applications • Power Management solutions for Desktop and Server Systems 81061 A L Y W G = Specific Device Code = Assembly Location


    Original     		PDF NCP81061 QFN16 485AW NCP6151 NCP81061/D NCP81061

    F1776

    Abstract: Q62702-F1776 bf2040w marking 55 Sot-343 marking code g2s marking code g1s
    Text: BF 2040W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code BF 2040W NCs


    Original     		PDF Q62702-F1776 OT-343 Jun-05-1998 F1776 Q62702-F1776 bf2040w marking 55 Sot-343 marking code g2s marking code g1s

    STK730FC

    Abstract: KST-H014-000 STK730 AUK auk stk730
    Text: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730


    Original     		PDF STK730FC STK730 O-220F-3SL KST-H014-000 STK730FC KST-H014-000 STK730 AUK auk stk730

    Si5435DC

    Abstract: Si5435DC-T1
    Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		PDF Si5435DC Si5435DC-T1 S-21251--Rev. 05-Aug-02

    Si5435DC

    Abstract: 41AR Si5435DC-T1
    Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		PDF Si5435DC Si5435DC-T1 08-Apr-05 41AR

    f 0472 N-Channel MOSFET

    Abstract: si5980
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1


    Original     		PDF Si5980DU 2002/95/EC Si5980DU-T1-GE3 18-Jul-08 f 0472 N-Channel MOSFET si5980

    Untitled

    Abstract: No abstract text available
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1


    Original     		PDF Si5980DU 2002/95/EC Si5980DUelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1907DL New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.650 @ VGS = –4.5 V "0.56 0.925 @ VGS = –2.5 V "0.47 1.310 @ VGS = –1.8 V "0.39 QC XX YY Marking Code Lot Traceability and Date Code


    Original     		PDF Si1907DL S-99184--Rev. 01-Nov-99

    Si1304DL

    Abstract: No abstract text available
    Text: Si1304DL New Product Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 25 SOT-323 SC-70 (3-LEADS) G 1 S D KB XX YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code


    Original     		PDF Si1304DL OT-323 SC-70 S-03474--Rev. 09-Apr-01

    S 71062

    Abstract: Si5402DC MARKING CODE AA S9926
    Text: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code


    Original     		PDF Si5402DC S-99267--Rev. 15-Nov-99 S 71062 MARKING CODE AA S9926

    MARKING CODE AA

    Abstract: Si5402DC Vishay DaTE CODE 1206-8 Si5402DC-T1
    Text: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V 6.7 0.055 @ VGS = 4.5 V 5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code


    Original     		PDF Si5402DC Si5402DC-T1 S-21251--Rev. 05-Aug-02 MARKING CODE AA Vishay DaTE CODE 1206-8

    7130-1

    Abstract: Si1300DL
    Text: Si1300DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-323 SC-70 (3-Leads) Marking Code 1 3 S KC D XX YY G Lot Traceability and Date Code 2 Part # Code


    Original     		PDF Si1300DL OT-323 SC-70 S-01883--Rev. 28-Aug-00 7130-1

    Si5404DC

    Abstract: Si5404DC-T1
    Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View


    Original     		PDF Si5404DC Si5404DC-T1 18-Jul-08

    marking YD

    Abstract: BF999
    Text: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol


    OCR Scan     		PDF 62702-F38 Q62702-F1132 marking YD BF999

    sot-363 marking 3C

    Abstract: lf 10193
    Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code


    OCR Scan     		PDF OT-363 SC-70 S-02367-- 23-Oct-OO sot-363 marking 3C lf 10193