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    MOSFET MARKING K2 DUAL Search Results

    MOSFET MARKING K2 DUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING K2 DUAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA917DJ SC-70 SC-70-6 SiA917DJ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA917DJ SC-70 SC-70-6 SiA917DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA917DJ SC-70 SC-70-6 SiA917DJ-T1-GEelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIA915DJ

    Abstract: No abstract text available
    Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA915DJ SC-70 2002/95/EC SC-70-6 SiA915DJ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA911DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA911DJ SC-70 SC-70-6 SiA911DJ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®


    Original     		PDF SiA912DJ SC-70 SC-70-6 SiA912DJ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiB911DK SC-75 SC75-6L-Dual SiB911DK-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA911EDJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA906EDJ SC-70 SC-70-6 SiA906EDJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiB911DK SC-75 SC75-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA913ADJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.053 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 0.077 at VGS = 1.8 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA914DJ SC-70 SC-70-6 SiA914DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®


    Original     		PDF SiA912DJ SC-70 SC-70-6 SiA912DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sc-70 6l package k1 marking code

    Abstract: No abstract text available
    Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA906EDJ SC-70 SC-70-6 SiA906EDJ-T1-GE3 11-Mar-11 sc-70 6l package k1 marking code

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8


    Original     		PDF SiB914DK SC-75 SC75-6L-Dual 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA911EDJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 SiA911ADJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA923EDJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking code vishay SILICONIX

    Abstract: SIA915DJ
    Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA915DJ SC-70 2002/95/EC SC-70-6 SiA915DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code vishay SILICONIX

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA906EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA923EDJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12