Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3
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OT-23
CJ2303
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4
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OT-23
CJ2304
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5
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OT-23
CJ2305
OT-23
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2SJ0672
Abstract: 2SK3539 UP04979
Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage
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UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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702E
Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT
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2N7002E
OT-323
SRT84W
2N7002S
OT-363
SRT84S
2N7002
OT-23
702E
MARKING 5F SOT363
MOSFET N SOT-23
MOSFET SOT-23
2N7002 SOT-23
transistor 702E
sot-23 marking E
sot-23 marking 113
MARKING ZT SOT23
MARKING ZT
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STK730FC
Abstract: KST-H014-000 STK730 AUK auk stk730
Text: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730
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STK730FC
STK730
O-220F-3SL
KST-H014-000
STK730FC
KST-H014-000
STK730 AUK
auk stk730
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STK730F
Abstract: KST-H037-000
Text: STK730F . Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions
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STK730F
STK730
O-220F
KST-H037-000
STK730F
KST-H037-000
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STK830FC
Abstract: mosfet 500V 45A STK830
Text: STK830FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA Max. @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. Marking
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STK830FC
STK830
O-220F-3SL
KST-H017-000
STK830FC
mosfet 500V 45A
STK830
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auk stk0765
Abstract: STK0765 STK0765F Advanced Power MOSFET KST-H038-000
Text: STK0765F Semiconductor Advanced Power MOSFET Features • Low Crss • Low gate charge. • HIGH BVDSS • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Gate
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STK0765F
STK0765
O-220F
KST-H038-000
auk stk0765
STK0765
STK0765F
Advanced Power MOSFET
KST-H038-000
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Q62702-F1628
Abstract: marking code g1s
Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1009S
1009S
Q62702-F1628
OT-143
200MHz
Q62702-F1628
marking code g1s
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NCP81061
Abstract: NCP6151
Text: NCP81061 VR12 Compatible Synchronous Buck Dual MOSFET Driver http://onsemi.com MARKING DIAGRAM 1 QFN16 CASE 485AW Features • • Typical Applications • Power Management solutions for Desktop and Server Systems 81061 A L Y W G = Specific Device Code = Assembly Location
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NCP81061
QFN16
485AW
NCP6151
NCP81061/D
NCP81061
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F1776
Abstract: Q62702-F1776 bf2040w marking 55 Sot-343 marking code g2s marking code g1s
Text: BF 2040W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code BF 2040W NCs
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Q62702-F1776
OT-343
Jun-05-1998
F1776
Q62702-F1776
bf2040w
marking 55 Sot-343
marking code g2s
marking code g1s
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SUF3001
Abstract: No abstract text available
Text: SUF3001 Semiconductor Dual P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=1.0~3.0V • Small footprint due to small package • Low RDS (ON) : RDS (ON) =66mΩ Ordering Information Type NO. Marking
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SUF3001
KSD-T7F004-000
SUF3001
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marking code g1s
Abstract: Q62702-F1665
Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1005S
1005S
Q62702-F1665
OT-143
200MHz
marking code g1s
Q62702-F1665
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PDF
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marking code g1s
Abstract: Q62702-F1774 SOT 343 MARKING BF
Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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VPS05605
Q62702-F1774
OT-343
Jun-05-1998
marking code g1s
Q62702-F1774
SOT 343 MARKING BF
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STK730P
Abstract: No abstract text available
Text: STK730P Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730P
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STK730P
STK730
O-220AB-3L
KSD-T0P008-000
STK730P
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p 1S marking SOT143
Abstract: marking code g1s Q62702-F1775 VPS05178 marking g1s
Text: BF 2040 Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 5V 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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VPS05178
Q62702-F1775
OT-143
Jun-05-1998
p 1S marking SOT143
marking code g1s
Q62702-F1775
VPS05178
marking g1s
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marking code g1s
Abstract: Q62702-F1498
Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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Q62702-F1498
OT-143
200MHz
marking code g1s
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marking code g1s
Abstract: p 1S marking SOT143 marking code g2s Q62702-F1773 VPS05178 Marking G1s
Text: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 5V 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Original
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VPS05178
Q62702-F1773
OT-143
Mar-16-1998
marking code g1s
p 1S marking SOT143
marking code g2s
Q62702-F1773
VPS05178
Marking G1s
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PDF
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marking code g1s
Abstract: marking g1s marking G2s
Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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Q62702-F1774
OT-343
marking code g1s
marking g1s
marking G2s
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PDF
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SOT 343 MARKING BF
Abstract: 2SM10 marking code g1s
Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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Q62702-F1776
OT-343
SOT 343 MARKING BF
2SM10
marking code g1s
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PDF
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Silicon N Channel MOSFET Tetrode
Abstract: No abstract text available
Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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Q62702-F1613
OT-143
800MHz
Silicon N Channel MOSFET Tetrode
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PDF
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