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    MOSFET MIN Search Results

    MOSFET MIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    SW740

    Abstract: Samwin
    Text: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,


    Original     		PDF SW740 SW740 Samwin

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9971P Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.


    Original     		PDF UT9971P UT9971P UT9971PL-AA3-R UT9971PG-AA3-R OT-223 QW-R502-764

    Samwin* sw640

    Abstract: Samwin SW640
    Text: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better


    Original     		PDF SW640 200nF 300nF Samwin* sw640 Samwin SW640

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9971P Preliminary Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.


    Original     		PDF UT9971P UT9971P UT9971PL-AA3-R UT9971PG-AA3-R OT-223 QW-R502-764

    Untitled

    Abstract: No abstract text available
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed


    Original     		PDF UFR9120 UFR9120 UFR9120L-TN3-R UFR9120G-TN3-R UFR9120L-TN3-T UFR9120G-TN3-T O-252 QW-R502-570

    SW7N60

    Abstract: Samwin
    Text: SAMWIN SW7N60 Features General Description N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


    Original     		PDF SW7N60 200nF 300nF SW7N60 Samwin

    Samwin

    Abstract: sw840
    Text: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as


    Original     		PDF SW840 Samwin sw840

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT200N03 UTT200N03 UTT200N03L-TA3-T UTT200N03G-TA3-T UTT200N03L-TQ2-T UTT200N03G-TQ2-T UTT200N03L-TQ2-R UTT200N03G-TQ2-R QW-R502-758

    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


    Original     		PDF SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UFZ44 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UFZ44 is an N-channel mode Power MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior


    Original     		PDF UFZ44 UFZ44 UFZ44L-TA3-T UFZ44G-TA3-T QW-R107-066

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N20 Power MOSFET 7A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N20 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. This device can also withstand


    Original     		PDF QW-R502-811

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF7476 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and minimum on-state resistance.


    Original     		PDF UF7476 UF7476 UF7476L-S08-R UF7476G-S08-R 2014at QW-R502-A70

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N70K 10N70K 10N70KL-TF1-T 10N70KG-TF1-T O-220F1 QW-R502-A69

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 11NM40 Preliminary Power MOSFET 11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		PDF 11NM40 11NM40 QW-R502-A38

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		PDF 6NM80 6NM80 6NM80L-Tat QW-R209-070

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar


    Original     		PDF 7N10Z 7N10Z QW-R502-762

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT220N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT220N03 is a N-channel MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT220N03 UTT220N03 O-220 QW-R502-514

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743