MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Search Results

MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P-Channel Depletion Mosfets Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	PDF	AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
P-Channel Depletion Mode FET Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	PDF	AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
MPF102 equivalent transistor Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or	Original	PDF	AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	PDF	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	PDF	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
MPF102 JFET Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory	Original	PDF	AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
MM74HC Abstract: AN-310 C1995 CD4011B DM74LS00 DM74S00 MM54HC MM74C00 MM74HC00 AN NOT gate TL Equivalent Text: National Semiconductor Application Note 310 Kenneth Karakotsios June 1983 The MM54HC MM74HC logic family achieves its high speed by utilizing microCMOSTM Technology This is a 3 5 silicon gate P-well CMOS process single layer poly single layer metal P-well process with oxide-isolated transistors	Original	PDF	MM54HC MM74HC AN-310 C1995 CD4011B DM74LS00 DM74S00 MM74C00 MM74HC00 AN NOT gate TL Equivalent
CMOS Process Family Abstract: P-MOSFET transistor P-MOSFET process of mosfet micron resistor Text: 2 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 4 µm Poly and Metal I Pitch • 320 ps Delay per stage Ring Osc. • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • Shrinkable to Mitel 1.5µm Process	Original	PDF
CMOS Process Family Abstract: No abstract text available Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option	Original	PDF	150mm CMOS Process Family
micron resistor Abstract: CMOS Process Family Text: 2 Micron CMOS Process Family  February 1996 Features • • • • • • • • • Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage Ring Osc. 5.5 Volts Maximum Operating Voltage 2.7~3.6 Volts Low Voltage Option	Original	PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original	PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original	PDF
AN-1084 Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5	Original	PDF	AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
all mosfet equivalent book Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2	Original	PDF	AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion

P-Channel Depletion Mode FET Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic	Original	PDF	AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
p channel depletion mosfet Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the	Original	PDF	AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Untitled Abstract: No abstract text available Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option	Original	PDF	150mm
CMOS Process Family Abstract: P-MOSFET mosfet 4800 Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option	Original	PDF	150mm CMOS Process Family P-MOSFET mosfet 4800
J120 MOSFET Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140 Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and	Original	PDF	MRF175LU/D MRF175LU J120 MOSFET J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	Original	PDF	MRF176GU/D MRF176GU MRF176GV MRF176GU MRF176GU/D*
J600 MOSFET Abstract: uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	Original	PDF	MRF176GU/D MRF176GU MRF176GV MRF176GU J600 MOSFET uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors
relay 12v 200 ohm Abstract: load-dump airbag temic telefunken IC flasher Text: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter	Original	PDF	10-mV relay 12v 200 ohm load-dump airbag temic telefunken IC flasher
tektronix 576 curve tracer Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit Text: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today	Original	PDF
MRF1550F Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	PDF	AN215A, MRF1550T1 MRF1550FT1 MRF1550F

MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Search Results

MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Result Highlights (5)

MOSFET N-CHANNEL, METAL OXIDE TRANSISTORS Datasheets Context Search

P-Channel Depletion Mosfets

P-Channel Depletion Mode FET

MPF102 equivalent transistor

AN211A

2N3797

MPF102 JFET

MM74HC

CMOS Process Family

CMOS Process Family

micron resistor

HEXFET Power MOSFET designer manual

HEXFET Power MOSFET designer manual

AN-1084

all mosfet equivalent book

P-Channel Depletion Mode FET

p channel depletion mosfet

Untitled

CMOS Process Family

J120 MOSFET

Untitled

J600 MOSFET

relay 12v 200 ohm

tektronix 576 curve tracer

MRF1550F