369A-13
Abstract: AN569 NTD3055 NTD3055-094 NTD3055-094-1 NTD3055-094T4 55094
Text: NTD3055−094 Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • 12 AMPERES 60 VOLTS
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NTD3055-094
NTD3055-094/D
369A-13
AN569
NTD3055
NTD3055-094
NTD3055-094-1
NTD3055-094T4
55094
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n50a
Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
Text: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous
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O-247
O-204
O-204
O-247
n50a
12N50A
12n50
IXYS CORPORATION
TO-204AA
ups 017
IXTH
max 3540
D-68623
IXTM12N50A
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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ISOPLUS220TM
22N60P
02-17-06-B
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IXTH130N15T
Abstract: IXTQ130N15T
Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH130N15T IXTQ130N15T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 150 V = 130 A Ω ≤ 12 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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IXTH130N15T
IXTQ130N15T
O-247
130N15T
IXTH130N15T
IXTQ130N15T
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22N60P
Abstract: 22n60 nt314 C4522 IXFC22N60P
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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ISOPLUS220TM
22N60P
02-17-06-B
22N60P
22n60
nt314
C4522
IXFC22N60P
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12n50
Abstract: No abstract text available
Text: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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12N50P
O-220
12n50
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IXTP76N075T
Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
Text: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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IXTA76N075T
IXTP76N075T
O-263
O-220)
76N075T
IXTP76N075T
76n075
76N075T
ixtp76n075
IXTA76N075T
305v
76N07
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V
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12N50P
O-220
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IXTP76N075
Abstract: 76n075
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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IXTA76N075T
IXTP76N075T
O-263
76N075T
IXTP76N075
76n075
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25
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12N50P
12N50P
O-263
O-220
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IXFV12N80P
Abstract: plus220smd IXFQ12N80P IXFH12N80P 6V84
Text: PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
O-247
IXFH12N80P
IXFV12N80P
PLUS220
plus220smd
IXFQ12N80P
6V84
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12N50P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500
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12N50P
12N50P
O-263
O-263
O-220
O-220)
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IXFQ12N80P
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
O-247
IXFH12N80P
IXFV12N80P
PLUS220
IXFQ12N80P
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12n80
Abstract: 12N80P
Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 12 A 1.1 Ω 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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12N80P
12N80P
O-263
O-247
O-220
405B2
12n80
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15
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60-01P1
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
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60-01P1
Abstract: eco-pac
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
60-01P1
eco-pac
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Untitled
Abstract: No abstract text available
Text: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 100 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED
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FM200TU-3A
Amperes/150
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-2A
Amperes/100
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED
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FM600TU-2A
Amperes/100
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me12n06el
Abstract: Nihon Inter Electronics me12n06
Text: CATALOG No NIEC-009 SINCE 1957 N IE C Industry Leader Power Semiconductor ME12N06EL ME12N06EL-F Power MOSFET Logic Level N-Channel Logic Level 12 Amperes 60 Volts RDS on = 0.18 Ohms FEATURES: • Fast Sw itching • Low D rive R equirem ents to Interface
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NIEC-009
ME12N06EL
ME12N06EL-F
360mm
EIA-481
TE16F2
ME12N06EL-F
Nihon Inter Electronics
me12n06
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Power MOSFET TT 2146
Abstract: mosfet TT 2146 n50A os TT 2222
Text: XYS Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A ^DSS ! ^D25 500 V 12 A 500 V I 12 A P DS on 0.4 i l 0.4 i l N-Channel Enhancement Mode Symbol Test Conditions VDSS T j = 25°C to 150°C 500 Tj = 25°C to 150°C; Res = 1 Mi2 500 V Maximum Ratings V Vgs
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O-247
O-204
O-204
O-247
C2-32
C2-33
Power MOSFET TT 2146
mosfet TT 2146
n50A
os TT 2222
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Untitled
Abstract: No abstract text available
Text: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il
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O-247
O-204
O-247
12N50A
100ms
4bfib22b
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 =12 »71^347^1=3 U N I T R O D E CORP 92D 10Q45 □010&45 D POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Fast Switching • Low drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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10Q45
UFNF222
UFNF223
UFNF220
UFNF221
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