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    MOSFET P-CH ENHANCEMENT Search Results

    MOSFET P-CH ENHANCEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CH ENHANCEMENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSS4569

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/09/20 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 40m N-CH ID 5.0A P-CH BVDSS -40V N-CH RDS(ON) 100m N-CH ID -4.4A GSS4569 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4569 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS4569 GSS4569

    GT2530

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GT2530 GT2530 OT-26

    GP4565

    Abstract: 40v N- and P-Channel dip
    Text: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GP4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP4565 GP4565 40v N- and P-Channel dip

    GP4501

    Abstract: GP450
    Text: Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GP4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4501 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP4501 GP4501 GP450

    GT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and


    Original     		PDF GT3585 GT3585 OT-26

    GT2531

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GT2531 GT2531 OT-26

    GTT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/23 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GTT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GTT3585 provide the designer with best combination of fast switching, low on-resistance and


    Original     		PDF GTT3585 GTT3585 00eserved.

    GSS2030

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS2030 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS2030 GSS2030

    20C1D

    Abstract: GP2030S
    Text: Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP2030S GP2030S 20C1D

    GSS9510

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A GSS9510 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS9510 GSS9510

    GSS4501S

    Abstract: Mosfet n-channel
    Text: Pb Free Plating Product ISSUED DATE :2006/04/27 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 33m N-CH ID 6A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GSS4501S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4501S provide the designer with the best combination of fast switching, ruggedized device design,


    Original     		PDF GSS4501S GSS4501S Mosfet n-channel

    GSS9930

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/10/13 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 33m N-CH ID 6.3A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.1A GSS9930 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9930 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS9930 GSS9930

    GSS4500

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/04/21 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS4500 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4500 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS4500 GSS4500

    GSS4507

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 36m N-CH ID 6.0A P-CH BVDSS -30V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4507 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4507 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4507 GSS4507

    Taiwan Semiconductor 6A

    Abstract: GSS4503
    Text: Pb Free Plating Product ISSUED DATE :2005/07/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 36m N-CH ID -6.3A GSS4503 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4503 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4503 GSS4503 Taiwan Semiconductor 6A

    GSS4502

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE :2005/09/29B N-CH BVDSS 20V N-CH RDS ON 18m N-CH ID 8.3A P-CH BVDSS -20V N-CH RDS(ON) 45m N-CH ID -5A GSS4502 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4502 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4502 GSS4502

    GSS4501

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE :2006/11/09C N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GSS4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4501 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2006/11/09C GSS4501 GSS4501 40eserved.

    GSS4565

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GSS4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4565 GSS4565

    GSS4575

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/06/06 REVISED DATE :2005/09/29B N-CH BVDSS 60V N-CH RDS ON 36m N-CH ID 6A P-CH BVDSS -60V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4575 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4575 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4575 GSS4575

    GSS4532

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/07/01 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 50m N-CH ID 5A P-CH BVDSS -30V N-CH RDS(ON) 70m N-CH ID -4A GSS4532 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4532 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4532 GSS4532

    GSS4505

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 20m N-CH ID 8.3A P-CH BVDSS -30V N-CH RDS(ON) 28m N-CH ID -7.1A GSS4505 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4505 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4505 GSS4505

    GSS4511

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 35V N-CH RDS ON 25m N-CH ID 7.0A P-CH BVDSS -35V N-CH RDS(ON) 40m N-CH ID -6.1A G S S 4 5 11 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4511 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4511 GSS4511

    SSI2007

    Abstract: MosFET
    Text: SSI2007 N-Ch: 0.8A, 20V, RDS ON 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-563 DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field


    Original     		PDF SSI2007 OT-563 SSI2007 17-Dec-2013 MosFET

    300 Amp mosfet

    Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH


    OCR Scan     		PDF 400MHz T0106 200MHz 18Typ 250pA tiMaias11! 300 Amp mosfet mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp