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    MOSFET P-CHANNEL 300V IRF Search Results

    MOSFET P-CHANNEL 300V IRF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CHANNEL 300V IRF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2213

    Abstract: IR2213 application note irfbc50 IR2213PBF IR213 IR2213SPBF IR2213S IRFBC20 IRFBC30 IRFBC40
    Text: Preliminary Data Sheet No. PD60030 rev.P IR2213 S & (PbF) HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +1200V Tolerant to negative transient voltage


    Original     		PDF PD60030 IR2213 14-Lead IR2213 16-Lead IR2213S IR2213S IR2213STR IR2213 application note irfbc50 IR2213PBF IR213 IR2213SPBF IRFBC20 IRFBC30 IRFBC40

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD60030 rev.P IR2213 S & (PbF) HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +1200V Tolerant to negative transient voltage


    Original     		PDF PD60030 IR2213 14-Lead IR2213 16-Lead IR2213S IR2213S IR2213STR

    IR2181 application notes

    Abstract: IRFBC50 IR2181 IR2213 IR213 IR21814S IR2181PBF IR2181SPBF IR2181S IRFBC40
    Text: Preliminary Data Sheet No. PD60030 rev.O IR2213 S & (PbF) HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +1200V Tolerant to negative transient voltage


    Original     		PDF PD60030 IR2213 IR2181 IR2181 IR2181S IR2181S 14-Lead IR21814 IR21814 IR2181 application notes IRFBC50 IR213 IR21814S IR2181PBF IR2181SPBF IRFBC40

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    12V to 300V dc dc converter step-up

    Abstract: BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530
    Text: Products Selection Guide www.belling.com.cn Index of Part Number 型号索引 Control & Driver 驱动控制类 Counter, CD/DVD, Relay, Stepped motor, Brushless motor, etc（机电驱动） LCD display driver（液晶显示驱动） Digital Appliances 数字家电类


    Original     		PDF TPA6211 BL6203 TPA6203 BL6204 TPA6204 BL6212 LM4990 BL6217 HDIP18 TDA1517 12V to 300V dc dc converter step-up BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    tektronix 576 curve tracer

    Abstract: 10063 mosfet 4b application circuits of IRF330 drive motor 10A with transistor P channel MOSFET AN-558 C1995 IRF330 IRF450 n mosfet depletion
    Text: INTRODUCTION The high voltage power MOSFETs that are available today are N-channel enhancement-mode double diffused MetalOxide-Silicon Field Effect Transistors They perform the same function as NPN bipolar junction transistors except the former are voltage controlled in contrast to the current


    Original     		PDF

    LTC3300

    Abstract: LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors
    Text: January 2012 I N T H I S I S S U E integer-N synthesizer with integrated VCO in a 4mm x 5mm package 9 supercapacitor-based power supply ride-through system 15 ultralow-EMI, µModule Volume 21 Number 4 Dual Output DC/DC Controller Combines Digital Power System


    Original     		PDF EN55022 LT1638 LT1970A com/516 LT1970A SW-COC-001530 LTC3300 LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors

    diagram for a 12v 250w power amplifier

    Abstract: 250w audio amplifier circuit diagram 200w audio amplifier circuit diagram class D IRS20957S IRAUD
    Text: IRAUDAMP6 250W/8Ω x 2 Channel Class D Audio Power Amplifier Using the IRS20957S and IRF6785 By Jun Honda, Jorge Cerezo and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP6 Demo board;


    Original     		PDF 50W/8 IRS20957S IRF6785 diagram for a 12v 250w power amplifier 250w audio amplifier circuit diagram 200w audio amplifier circuit diagram class D IRAUD

    IRS2092S

    Abstract: power amplifier 3000W with PCB inverter 12v to 220 ac mosfet based
    Text: IRAUDAMP9 1.7 kW / 2- Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:


    Original     		PDF IRS2092S IRFB4227 R43/R41, power amplifier 3000W with PCB inverter 12v to 220 ac mosfet based

    DSR3241

    Abstract: SCHEMATIC 3000w Power Amplifier power amplifier 3000W with PCB IRFB4227 schematic Class D 1KW RMS audio amplifier schematic diagram 48V 500W Controller SmD TRANSISTOR a82 3000w transistor audio amplifier circuit diagram 3000w audio amplifier irs2092
    Text: IRAUDAMP9 1.7 kW / 2-Ω Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:


    Original     		PDF IRS2092S IRFB4227 R43/R41, DSR3241 SCHEMATIC 3000w Power Amplifier power amplifier 3000W with PCB IRFB4227 schematic Class D 1KW RMS audio amplifier schematic diagram 48V 500W Controller SmD TRANSISTOR a82 3000w transistor audio amplifier circuit diagram 3000w audio amplifier irs2092

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		PDF AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		PDF AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983

    INT-944

    Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
    Text: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v

    C40r

    Abstract: IRFA ndam
    Text: m IRFAC40R IRFAC42R H a r r is N -Channel Power MOSFETs Avalanche Energy Rated August 1991 Package F e a tu re s • T O -2 0 4 A A BOTTOM VIEW 6 .2 A a n d 5.4 A , 6 0 0 V • r D S on = 1 -2 f i a n d 1-6 n • R e p e titiv e A v a la n c h e R a tin g s


    OCR Scan     		PDF IRFAC40R IRFAC42R IRFAC42R IRFAC40R, C40r IRFA ndam

    2SK2639-01

    Abstract: No abstract text available
    Text: F U J I ü^iUMarü^uis 2SK2639-01 N-channel MOS-FET 450V 0,65Q 10A 1 0 0 W FAP-IIS Series > Features - Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2639-01

    2SK2759-01R

    Abstract: No abstract text available
    Text: FUJI 2SK2759-01R s ta is ir itìu e FAP-IIS Series N-channel MOS-FET 500V 0,55Q 15A 80W > Features - > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2759-01R

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    GFIJ

    Abstract: No abstract text available
    Text: 2SK2027-01 FU JI POWER M OS-FET IM-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching 03.6*0.2 • Low on-resistance < k5±02 l.3±0.2 • No secondary breakdown • l.ow driving power • High voltage • V gs = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK2027-01 220AB SC-46 GFIJ

    A2253

    Abstract: 2sk18
    Text: 2SK1820-01 L,S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET • Features p SERIES j j ■ Outline Drawings • High speed switching • Low on-resistance • No ¡secondary breakdown • Low driving power • High voltage • V cse = ± 3 0 V Gurantee


    OCR Scan     		PDF 2SK1820-01 A2253 2sk18

    f11u

    Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
    Text: SK1916-01R FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F - I I I Features S E R I E S Outline Drawings ►High speed switching ►Low on-resistance ►Mo secondary breakdown ►Low driving power ►High voltage 'V Ge; = ±30V Guarantee •Avalanche-proof


    OCR Scan     		PDF 2SK1916-01R f11u 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267

    3 phase inverter 120 conduction mode waveform

    Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
    Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed


    OCR Scan     		PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter