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    MOSFET POWER AMPLIFIER MODULE 900MHZ Search Results

    MOSFET POWER AMPLIFIER MODULE 900MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET POWER AMPLIFIER MODULE 900MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 13w 05

    Abstract: RA13H8891MA RA13H8891MA-101 MOSFET Power Amplifier Module 900Mhz
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz mosfet 13w 05 RA13H8891MA-101 MOSFET Power Amplifier Module 900Mhz PDF

    RA13H8891MB-101

    Abstract: H11S MOSFET Power Amplifier Module 900Mhz
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz RA13H8891MB-101 H11S MOSFET Power Amplifier Module 900Mhz PDF

    MOSFET Power Amplifier Module 900Mhz

    Abstract: RA01L8693MA GP20
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L8693MA 865-928MHz RA01L8693MA MOSFET Power Amplifier Module 900Mhz GP20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L8693MA 865-928MHz RA01L8693MA PDF

    13w marking code

    Abstract: Code 13w marking code 13W rf MARKING "13W" MOSFET Power Amplifier Module 900Mhz
    Text: <Silicon RF Power Modules > RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MA RA13H8891MA 13-watt 915-MHz 13w marking code Code 13w marking code 13W rf MARKING "13W" MOSFET Power Amplifier Module 900Mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz PDF

    MARKING CODE 13w

    Abstract: 13W MARKING
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz Oct2011 MARKING CODE 13w 13W MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz PDF

    MOSFET Power Amplifier Module 900Mhz

    Abstract: RA13H8891MA RA13H8891MA-101 MOSFET Amplifier Module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz MOSFET Power Amplifier Module 900Mhz RA13H8891MA-101 MOSFET Amplifier Module PDF

    MOSFET Power Amplifier Module 900Mhz

    Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz MOSFET Power Amplifier Module 900Mhz H11S RF MOSFET MODULE RA13H8891MB-101 PDF

    H11S

    Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz H11S RA13H8891MA-01 RA13H8891MA-E01 PDF

    RA13H8891MA

    Abstract: RA13H8891MA-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-01 PDF

    H11S

    Abstract: RA13H8891MB-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01 PDF

    H11S

    Abstract: RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz PDF

    transistor marking code H11S

    Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz transistor marking code H11S MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the


    Original     		MC33170 900MHz 1800MHz 900mV MC33170 PDF

    HD6413003F16

    Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
    Text: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744


    Original     		ZM33064C ZSD1000D8 TD300IN TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN HD6413003F16 hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the


    Original     		MC33170 900MHz 1800MHz 900mV MC33170DTB 948G-01 MC33170DTBR2 948G-01 PDF

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 PDF

    DCS-1800

    Abstract: GSM-900 MC33170 MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MTSF3N02HD dcs response time DCS 1800 to GSM converter
    Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the


    Original     		MC33170 MC33170 900MHz 1800MHz 900mV r14525 MC33170/D DCS-1800 GSM-900 MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MTSF3N02HD dcs response time DCS 1800 to GSM converter PDF

    MC33170

    Abstract: MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MRFIC1859 MTSF3N02HD dcs response time RF 900MHz TO 1800MHz
    Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the


    Original     		MC33170 MC33170 900MHz 1800MHz 900mV r14153 MC33170/D MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MRFIC1859 MTSF3N02HD dcs response time RF 900MHz TO 1800MHz PDF

    UC3843 spice model

    Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
    Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,


    Original     		BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613 PDF

    Untitled

    Abstract: No abstract text available
    Text: Back MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the


    Original     		MC33170 900MHz 1800MHz 900mV r14525 MC33170/D PDF

    HG62G

    Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
    Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2


    OCR Scan     		PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035 PDF