9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
|
Original
|
2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
|
PDF
|
SW740
Abstract: Samwin
Text: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,
|
Original
|
SW740
SW740
Samwin
|
PDF
|
irf 520
Abstract: IRFH7928TRPBF
Text: PD -96209 Preliminary IRFH7928PbF Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET Power MOSFET VDSS 30V RDS on max Qg 2.9m @VGS = 10V 40nC : Benefits
|
Original
|
IRFH7928PbF
089mH,
irf 520
IRFH7928TRPBF
|
PDF
|
Samwin* sw640
Abstract: Samwin SW640
Text: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better
|
Original
|
SW640
200nF
300nF
Samwin* sw640
Samwin
SW640
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
|
PDF
|
Samwin
Abstract: sw840
Text: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as
|
Original
|
SW840
Samwin
sw840
|
PDF
|
SW50N06
Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
|
Original
|
SW50N06
023ohm
SW50N06
Samwin* sw50n06
Samwin
samwin sw50n06
CHMC
sw50n
chmc equivalent
|
PDF
|
20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
|
PDF
|
"RF MOSFET" 300W
Abstract: IXZH16N60 1 RF s 640 a 931 IXZ316N60 MOSFET QG mosfet 300w rf power mosfet
Text: IXZH16N60 Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Qg and Rg Low Capacitance Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for ClassSwitching C, D, & E Applications Symbol
|
Original
|
IXZH16N60
IXZ316N60
dsIXZH16N60
"RF MOSFET" 300W
IXZH16N60
1 RF s 640 a 931
MOSFET QG
mosfet 300w
rf power mosfet
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 MS-012AA
Text: PD - 97068 IRF7835PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.5m:@VGS = 10V 22nC Benefits l Very Low Qrr
|
Original
|
IRF7835PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
MS-012AA
|
PDF
|
IRF8714GPBF
Abstract: irf8714
Text: PD - 96263 IRF8714GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS on max Qg Converters used for Notebook Processor Power 30V 8.7m @VGS = 10V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits
|
Original
|
IRF8714GPbF
IRF8714GPbF
irf8714
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
US6M11
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
US6M11
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits
|
Original
|
IRFH7934PbF
535mH,
|
PDF
|
diode 22b3
Abstract: 22B3
Text: PD - 96140 IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
|
Original
|
IRFH7932PbF
078mH,
diode 22b3
22B3
|
PDF
|
IXZR18N50
Abstract: ixz318n50a
Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications
|
Original
|
IXZR18N50
IXZR18N50A/B
IXZ318N50A/B
dsIXZR18N50
IXZR18N50
ixz318n50a
|
PDF
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
|
PDF
|
EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
|
Original
|
6140A
IRFH7932PbF
071mH,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS
|
Original
|
IRFH7932PbF
IRFH7932TRPbF
IRFH7932TR2PbF
IRFH7934PbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 97336 IRFH7914PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 8.7mΩ@VGS = 10V 8.3nC Converters in Networking Systems Benefits
|
Original
|
IRFH7914PbF
|
PDF
|
IRFH7914PbF
Abstract: 9733
Text: PD - 97336 IRFH7914PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 8.7mΩ@VGS = 10V 8.3nC Converters in Networking Systems Benefits
|
Original
|
IRFH7914PbF
IRFH7914PbF
9733
|
PDF
|
IRF Power MOSFET code marking
Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
|
Original
|
6140A
IRFH7932PbF
071mH,
IRF Power MOSFET code marking
24v 12v 20A regulator
IRFH7932pbF
DM marking code
|
PDF
|
