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    MOSFET SOT23-6 QG Search Results

    MOSFET SOT23-6 QG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT23-6 QG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.


    Original     		PDF UM8515 UM8515 OT23-6 OT23-6 OT23-ed

    Untitled

    Abstract: No abstract text available
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L


    Original     		PDF OT23-6L OT23-6L DocID023012

    STT6N3LLH6

    Abstract: DIODE marking A2 stt6n3
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet — preliminary data Features Type RDS on VDSS STT6N3LLH6 30 V max 0.025 Ω (VGS= 10 V) 0.04 Ω (VGS= 4.5 V) ID 5 6 6A 3 2 1.6 W 1 SOT23-6L


    Original     		PDF OT23-6L OT23-6L STT6N3LLH6 DIODE marking A2 stt6n3

    MOSFET Drivers pin compatible with

    Abstract: No abstract text available
    Text: SM74101 SM74101 Tiny 7A MOSFET Gate Driver Literature Number: SNOSBA2 SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high


    Original     		PDF SM74101 SM74101 MOSFET Drivers pin compatible with

    Untitled

    Abstract: No abstract text available
    Text: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device


    Original     		PDF UM8516 UM8516 OT23-6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138AKA O-236AB) AEC-Q101

    LM5112MY

    Abstract: LM5112
    Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with


    Original     		PDF LM5112 LM5112 SNVS234B LM5112MY

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E

    mosfet short circuit protection schematic diagram

    Abstract: ic driver mosfet 8 pin mosfet power totem pole CIRCUIT Switching Power Supply Schematic Diagram using mosfet schematic 12v 3a power supply without transistor and ic LM5112-SDX MTD6N15 Q100 High Current MOSFET Driver bipolar non-inverting LM5112
    Text: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint with improved package power dissipation required for high frequency operation. The compound output driver


    Original     		PDF LM5112 LM5112 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. mosfet short circuit protection schematic diagram ic driver mosfet 8 pin mosfet power totem pole CIRCUIT Switching Power Supply Schematic Diagram using mosfet schematic 12v 3a power supply without transistor and ic LM5112-SDX MTD6N15 Q100 High Current MOSFET Driver bipolar non-inverting

    Mosfet

    Abstract: SSF3051G7
    Text: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits:       Advanced trench MOSFET process technology Special designed for buttery protection, load


    Original     		PDF SSF3051G7 3051G7 45mohm OT23-6 3000pcs 10pcs 30000pcs Mosfet SSF3051G7

    lm5112

    Abstract: No abstract text available
    Text: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad


    Original     		PDF LM5112 SNVS234B LM5112

    lm5112

    Abstract: L132B
    Text: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad


    Original     		PDF LM5112 SNVS234B LM5112 ns/12 L132B

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: No abstract text available
    Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh

    MOSFET TRANSISTOR SMD MARKING CODE NH

    Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
    Text: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE NH PMV160UP smd TRANSISTOR code marking 05 sot23

    led driver mosfet SOT23 6pin

    Abstract: MTD6N15 Q100 SDE06A
    Text: SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that


    Original     		PDF SM74101 SM74101 led driver mosfet SOT23 6pin MTD6N15 Q100 SDE06A

    LM5112MY

    Abstract: LM5112 LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN
    Text: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS


    Original     		PDF LM5112 LM5112 CSP-9-111S2) CSP-9-111S2. LM5112MY LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B03E6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		PDF ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541

    ZXMN2088

    Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		PDF ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 ZXMN2088 TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2

    Untitled

    Abstract: No abstract text available
    Text: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1


    Original     		PDF OT23-6L OT23-6L DocID024615

    Untitled

    Abstract: No abstract text available
    Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS on max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 STT6N3LLH6 5 6 30 V 3 2 1 0.036 Ω (VGS= 4.5 V)


    Original     		PDF OT23-6L OT23-6L DocID023012

    marking code 7N1

    Abstract: sot23 7N1 DS33564
    Text: A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features BVDSS RDS ON Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID TA = +25°C (Note 6) 0.76A 0.67A Low On-Resistance


    Original     		PDF ZXMN10A07F AEC-Q101 DS33564 marking code 7N1 sot23 7N1

    Untitled

    Abstract: No abstract text available
    Text: STT6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet − target specification Features Order code VDS RDS on max ID STT6P2UH7 20 V 0.029 Ω @ 4.5 V 6A • Ultra logic level • Extremely low on-resistance RDS(on)


    Original     		PDF OT23-6L OT23-6L SC14195p DocID024980

    Untitled

    Abstract: No abstract text available
    Text: STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet — production data Features Order code VDS RDS on max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 4 5 6 1.6 W • Very low profile package 3 2 • Conduction losses reduced


    Original     		PDF OT23-6L OT23-6L DocID026116