NTE491SM
Abstract: NTE491
Text: NTE491 NTE491SM MOSFET N−Ch, Enhancement Mode High Speed Switch Features: D Available in either TO92 NTE491 or SOT−23 Surface Mount (NTE491SM) Type Package D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable
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NTE491
NTE491SM
NTE491)
OT-23
NTE491SM)
NTE491SM
NTE491
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PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case
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SA146RS
PLCC-6 5050
P-Channel mosfet 400v to220
pj 84
elmwood 2450
MOSFET 400V depletion p channel
240v n-channel depletion mosfet
mosfet driver 400v
ks 4290
P-Channel Depletion-Mode
HT0440LG
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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OT-223
O-220
O-220F
O-251
O-251L
QW-R502-579
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diode MARKING A10
Abstract: sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A TSM1N80 id 0835 MOSFET 800V 15A diode 800v A10 SOT
Text: TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM1N80
OT-223
TSM1N80
diode MARKING A10
sot marking a10
TSM1N80CW
800v mosfet
MOSFET 800V 3A
id 0835
MOSFET 800V 15A
diode 800v
A10 SOT
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60K
2N60K
QW-R502-819
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60K
2N60K
QW-R502-819
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mosfet 1N70
Abstract: diode 1N70
Text: UNISONIC TECHNOLOGIES CO., LTD 1N70 Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-171
mosfet 1N70
diode 1N70
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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OT-223
QW-R502-579
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N60-KW
1N60-KW
QW-R205-054
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091.
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mosfet to92 low voltage
Abstract: power mosfet to92 high current to-92 mosfet 1A
Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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UK1398
UK1398
OT-23
UK1398L-AE3-R
UK1398G-AE3-R
UK1398L-T92-B
UK1398G-T92-B
UK1398L-T92-K
UK1398G-T92-K
UK1398L-T92-R
mosfet to92 low voltage
power mosfet to92 high current
to-92 mosfet 1A
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marking 724 diode sot-363
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
marking 724 diode sot-363
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
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Untitled
Abstract: No abstract text available
Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive
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TSM2N7000K
TSM2N7000KCT
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12A 650V MOSFET
Abstract: mosfet 30V 12A TO 252
Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-579
12A 650V MOSFET
mosfet 30V 12A TO 252
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UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-052
UTC1N60
1N60L
1N60GA
1N60G
1N60 mosfet
to126 mosfet
mosfet 12A 600V
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TC54
Abstract: MTP3055EL MC34164P3 equivalent TC54VN4302EZB MC34064P5 tc54vn43 MC33164P-5 MC34064P-5 MC34164P-3 MC34164P-5
Text: APPLICATION NOTE 2 USING THE TELCOM TC54 VOLTAGE DETECTOR USING THE TELCOM TC54 VOLTAGE DETECTOR AN-2 INTRODUCTION OPERATION TelCom's TC54 series of voltage detectors are designed to supersede a variety of discrete comparator circuits and bipolar technology voltage detectors.
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100mV
OT-23
OT-89
TC54Vgnal
TC54VN,
TC54Vx
TC54
MTP3055EL
MC34164P3 equivalent
TC54VN4302EZB
MC34064P5
tc54vn43
MC33164P-5
MC34064P-5
MC34164P-3
MC34164P-5
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220F2
OT-223
O-220
O-220F
QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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UK1398
UK1398
UK1398G-AE3-R
UK1398L-T92-B
UK1398G-T92-B
UK1398L-T92-K
UK1398G-T92-K
QW-R502-256
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mosfet 1N60
Abstract: 1n60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
mosfet 1N60
1n60
1N60 TO92
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