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    MOSFET TO92 LOW VOLTAGE Search Results

    MOSFET TO92 LOW VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TO92 LOW VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE491SM

    Abstract: NTE491
    Text: NTE491 NTE491SM MOSFET N−Ch, Enhancement Mode High Speed Switch Features: D Available in either TO92 NTE491 or SOT−23 Surface Mount (NTE491SM) Type Package D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable


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    PDF NTE491 NTE491SM NTE491) OT-23 NTE491SM) NTE491SM NTE491

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


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    PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


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    PDF OT-223 O-220 O-220F O-251 O-251L QW-R502-579

    diode MARKING A10

    Abstract: sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A TSM1N80 id 0835 MOSFET 800V 15A diode 800v A10 SOT
    Text: TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


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    PDF TSM1N80 OT-223 TSM1N80 diode MARKING A10 sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A id 0835 MOSFET 800V 15A diode 800v A10 SOT

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60K 2N60K QW-R502-819

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60K 2N60K QW-R502-819

    mosfet 1N70

    Abstract: diode 1N70
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N70 Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF QW-R502-171 mosfet 1N70 diode 1N70

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    PDF 1N60Z 1N60Z QW-R502-724

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 „ DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    PDF OT-223 QW-R502-579

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    PDF 1N60-KW 1N60-KW QW-R205-054

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF QW-R502-052

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF QW-R502-052 1n60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF 1N60A 1N60A QW-R502-091.

    mosfet to92 low voltage

    Abstract: power mosfet to92 high current to-92 mosfet 1A
    Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


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    PDF UK1398 UK1398 OT-23 UK1398L-AE3-R UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K UK1398L-T92-R mosfet to92 low voltage power mosfet to92 high current to-92 mosfet 1A

    marking 724 diode sot-363

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    PDF 1N60Z 1N60Z QW-R502-724 marking 724 diode sot-363

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    PDF 1N60Z 1N60Z QW-R502-724

    Untitled

    Abstract: No abstract text available
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram  Low On-Resistance  ESD Protection  High Speed Switching  Low Voltage Drive


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    PDF TSM2N7000K TSM2N7000KCT

    12A 650V MOSFET

    Abstract: mosfet 30V 12A TO 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


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    PDF OT-223 O-220 O-220F O-251 O-252 QW-R502-579 12A 650V MOSFET mosfet 30V 12A TO 252

    UTC1N60

    Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V

    TC54

    Abstract: MTP3055EL MC34164P3 equivalent TC54VN4302EZB MC34064P5 tc54vn43 MC33164P-5 MC34064P-5 MC34164P-3 MC34164P-5
    Text: APPLICATION NOTE 2 USING THE TELCOM TC54 VOLTAGE DETECTOR USING THE TELCOM TC54 VOLTAGE DETECTOR AN-2 INTRODUCTION OPERATION TelCom's TC54 series of voltage detectors are designed to supersede a variety of discrete comparator circuits and bipolar technology voltage detectors.


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    PDF 100mV OT-23 OT-89 TC54Vgnal TC54VN, TC54Vx TC54 MTP3055EL MC34164P3 equivalent TC54VN4302EZB MC34064P5 tc54vn43 MC33164P-5 MC34064P-5 MC34164P-3 MC34164P-5

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220F2 OT-223 O-220 O-220F QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING  DESCRIPTION The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


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    PDF UK1398 UK1398 UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K QW-R502-256

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF QW-R502-052 mosfet 1N60 1n60 1N60 TO92