MOSFET TRANSISTOR 3400 Search Results

MOSFET TRANSISTOR 3400 Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET TRANSISTOR 3400 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	NP55N04SUG NP55N04SUG O-252 O-252)	PDF
d1740 Abstract: NP55N04SUG Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	NP55N04SUG NP55N04SUG O-252 O-252) d1740	PDF
Untitled Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested	Original	IPT007N06N IEC61249-2-21	PDF
731 MOSFET Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.	Original	MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX	PDF
Untitled Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters	Original	IPA041N04N O-220-FP IEC61249-2-21	PDF
ATC100B3R3 Abstract: AN1955 MRF7S35120HSR3 Header MTTF Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3	PDF
J161 mosfet transistor Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3 J161 mosfet transistor 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3	PDF
MRF7S35015H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3 MRF7S35015HS MRF7S35015H	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3	PDF
Untitled Abstract: No abstract text available Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and	Original	NTE2969 NTE2969	PDF
Untitled Abstract: No abstract text available Text: Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 –30 V, –14 A, 7.0 mΩ Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.	Original	PA2736GR PA2736GR R07DS0868EJ0100 PA2736GR-E1-AT PA2736GR-E2-AT	PDF

041N04N Abstract: IPP041N04N IEC61249-2-21 JESD22 PG-TO220-3 Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications	Original	IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 041N04N 041N04N IEC61249-2-21 JESD22 PG-TO220-3	PDF
041N04N Abstract: PG-TO220-3 IPP041N04N JESD22 Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 4.1 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications	Original	IPP041N04N IPB041N04N PG-TO263-3 PG-TO220-3 041N04N 041N04N PG-TO220-3 JESD22	PDF
IEC61249-2-21 Abstract: IPB015N04L JESD22 V8002 Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level	Original	IPB015N04L PG-TO263-3 IEC61249-2-21 015N04L IEC61249-2-21 JESD22 V8002	PDF
Untitled Abstract: No abstract text available Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level	Original	IPB015N04L PG-TO263-3 015N04L	PDF
015N04L Abstract: IPB015N04L IPB015N04L G JESD22 Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level	Original	IPB015N04L PG-TO263-3 015N04L 015N04L IPB015N04L G JESD22	PDF
038N04N Abstract: JESD22 Text: Type IPD038N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.8 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level	Original	IPD038N04N PG-TO252-3 038N04N 038N04N JESD22	PDF
Untitled Abstract: No abstract text available Text: IPP041N04N G Type IPB041N04N G 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications	Original	IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 041N04N	PDF
DALE NTHS-1206N02 Abstract: dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3 Text: Final Electrical Specifications LTC4050 Lithium-Ion Linear Battery Charger Controller with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4050-4.1/LTC4050-4.2 are complete stand-alone constant-current/constant-voltage linear charge controllers for lithium-ion Li-Ion batteries. Charge current is	Original	LTC4050 1/LTC4050-4 LTC1731 LTC1732 LTC1734 4050i DALE NTHS-1206N02 dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3	PDF
NEC 10F triac Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272 Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2	Original	G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272	PDF
lc4050 Abstract: 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k Text: LTC4050 Lithium-Ion Linear Battery Charger with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Standalone Linear Charger Controller for 1-Cell Lithium-Ion Batteries Thermistor Interface for Battery Temperature	Original	LTC4050 10-Pin 100mA/500mA 4050f lc4050 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k	PDF

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MOSFET TRANSISTOR 3400 Search Results

MOSFET TRANSISTOR 3400 Result Highlights (5)

MOSFET TRANSISTOR 3400 Datasheets Context Search

Untitled

d1740

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731 MOSFET

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ATC100B3R3

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J161 mosfet transistor

A114

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MRF7S35015H

A114

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041N04N

041N04N

IEC61249-2-21

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015N04L

038N04N

Untitled

DALE NTHS-1206N02

NEC 10F triac

lc4050