Untitled
Abstract: No abstract text available
Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553F
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
-100V,
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Untitled
Abstract: No abstract text available
Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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90495G
O-254AA)
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
MIL-PRF-19500/595
O-254AA.
MIL-PRF-19500
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jantx2N7236
Abstract: IRFM9140 JANS2N7236 JANTXV2N7236 c 1384
Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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90495G
O-254AA)
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
MIL-PRF-19500/595
O-254AA.
MIL-PRF-19500
jantx2N7236
IRFM9140
JANS2N7236
JANTXV2N7236
c 1384
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IRFN9140
Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553F
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANS2N7236U
JANTX2N7236U
JANTXV2N7236U
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irf 640
Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International
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91294D
O-257AA)
IRFY9140C,
IRFY9140CM
IRFY9140C
5M-1994.
O-257AA.
irf 640
IRF 640 mosfet
IRF P CHANNEL MOSFET 10A 100V
SEC IRF 640
TO-257AA
IRFY9140C
IRFY9140CM
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IRFY9140C
Abstract: IRFY9140CM
Text: PD - 91294C POWER MOSFET THRU-HOLE TO-257AA IRFY9140C IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International
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91294C
O-257AA)
IRFY9140C
IRFY9140CM
IRFY9140C,
-200A/
-100V,
IRFY9140C
IRFY9140CM
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Untitled
Abstract: No abstract text available
Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International
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91294D
O-257AA)
IRFY9140C,
IRFY9140CM
IRFY9140C
5M-1994.
O-257AA.
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Z9004B
Abstract: aoz9004 12v battery charger circuit diagrams
Text: ^lwVMMQ_= Single-Cell Battery Protection IC with Integrated MOSFET May 2006 General Description The AOZ9004B is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and
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AOZ9004B
022uF
Z9004BI
Z9004B
aoz9004
12v battery charger circuit diagrams
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jfet cascode
Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the
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AN7260
jfet cascode
vertical JFET
SiS 671
12 VOLTS CIRCUIT USING MOSFET
an7260.2
mosfet equivalent
DEPLETION MOSFET
transistor jfet
Harris Semiconductor jfet
cascode mosfet switching
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J945
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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OCR Scan
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MarketinC14
10nFD
50Vdc
1N5347B
20Vdc
RF177
J945
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Zener diode with 9v FOR POWER SUPPLY
Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Text: mica MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side
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MIC5018
OT-143
MIC5018
Zener diode with 9v FOR POWER SUPPLY
9V 1A MOSFET N-channel
n02 mosfet
MH10 inductor
input 5 volt 3 v voltage mosfet
marking micrel sot cd
sot143 fet
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501B 8 P
Abstract: 5018B
Text: MIC5018 IE ü b IttyBitty High-Side MOSFET Driver L Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side
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OCR Scan
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MIC5018
MIC5018
IC5018
F540-
501B 8 P
5018B
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24 volt 200 w to mosfet inverter circuit diagram
Abstract: IRFZ24 SOT-143 D5
Text: M IC 4 4 1 6 /4 4 1 7 IttyBitty Low-Side MOSFET Driver Preliminary Information General Description Features The MIC4416 and MIC4417 IttyBitty™ low-side MOSFET drivers are designed to switch an N-channel enhancementtype MOSFET from a TTL-compatible control signal in lowside switch applications. The MIC4416 is noninverting and
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MIC4416
MIC4417
OT-143
MIC4416/7
25in2
600mW.
24 volt 200 w to mosfet inverter circuit diagram
IRFZ24
SOT-143 D5
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749 MOSFET TRANSISTOR motorola
Abstract: RF154 dss125
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.
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RF154
749 MOSFET TRANSISTOR motorola
RF154
dss125
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Untitled
Abstract: No abstract text available
Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier
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OCR Scan
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PDF
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IRF7313
muttiple-diEiA-481
EIA-541.
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arco 406
Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
MRF141G
arco 406
transistor fet N-Channel RF Amplifier
RF TOROIDS Design Considerations
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HPF730
Abstract: power relay N-channel mosfet
Text: HPF730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance
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HPF730
O-220AB
000G347
power relay N-channel mosfet
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2N6792
Abstract: 2N6791
Text: POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rouom and a high transconductance. Fast Switching
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2N6791
2N6792
2N6792
2N6791
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are6A peak , single output MOSFET drivers. The TC4429 is an Inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.
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TC4420
TC4429
TC4420/4429
TC4429
TC429)
TC4420
aS17bQ2
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C123 j.s
Abstract: No abstract text available
Text: International HSR Rectifier PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss = 30V ^DS on = 0.0290 Top View Description
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OCR Scan
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PDF
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IRF7313
C-124
C123 j.s
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14308D
Abstract: CA3240EI CA3240AE1 "pin-compatible" ca3140s CA3240 CA3240H BW140 ca3240 application circuit
Text: ö T = / y - / r operational Amplifiera CA3240A, CA3240 Dual BiMOS Operational Amplifiers With MOSFET Input, Bipolar Output Features: • Dual version o f CA3140 ■ Internally compensated ■ MOSFET input stage a Very high input impedance (Z in ) - 1.5 TCI typ.
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CA3240A,
CA3240
CA3140
RCA-CA3240A
CA3140-series
CA3240
CA3240H
14308D
CA3240EI
CA3240AE1 "pin-compatible"
ca3140s
BW140
ca3240 application circuit
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7A1 zener diode
Abstract: a3140 ca314 simple bass pre amplifier ca314 application notes analog IC CA3140 CA3140S PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AT
Text: S3 CA3140, CA3140A 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational am pli fiers that combine the advantages of high voltage PMOS transis
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CA3140,
CA3140A
CA3140A
CA3140
A3140
7A1 zener diode
ca314
simple bass pre amplifier
ca314 application notes
analog IC CA3140
CA3140S
PIN DIAGRAM OF IC CA3140
CA3130 peak detector
CA3140AT
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si 4422
Abstract: M1C4421
Text: MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4421 and MIC4422 MOSFET drivers are rugged, effi cient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.
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MIC4421/4422
MIC4421
MIC4422
MIC4421/4422
si 4422
M1C4421
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QM6001
Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Text: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package
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OM6001ST
OM6003ST
OM6101ST
OM6103ST
OM6002ST
OM6004ST
QM6102ST
OM61Q4ST
O-257AA
MIL-S-19500,
QM6001
6004ST
diode jr 702
diode t25 4 L0
lateral mosfet audio amplifier
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