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    MOSFET VDS 50 VGSTH Search Results

    MOSFET VDS 50 VGSTH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET VDS 50 VGSTH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor smd code marking nc

    Abstract: No abstract text available
    Text: SO T6 66 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench


    Original     		NX1029X OT666 AEC-Q101 transistor smd code marking nc PDF

    PSMN3R0-60PS

    Abstract: No abstract text available
    Text: PSMN3R0-60PS N-channel 60 V 3.0 mΩ standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PSMN3R0-60PS PSMN3R0-60PS PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		BSS84AKT OT416 SC-75) AEC-Q101 771-BSS84AKT115 BSS84AKT PDF

    PSMN5R6-100PS

    Abstract: No abstract text available
    Text: PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PSMN5R6-100PS O-220 100eet PSMN5R6-100PS PDF

    BSS84AKS.115

    Abstract: BSS84AKS TSSOP6 package
    Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.


    Original     		BSS84AKS OT363 SC-88) AEC-Q101 771-BSS84AKS115 BSS84AKS BSS84AKS.115 TSSOP6 package PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: BSS84AK
    Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS84AKV OT666 AEC-Q101 NXP SMD TRANSISTOR MARKING CODE s1 BSS84AK PDF

    psmn015 60ps

    Abstract: PSMN015-60PS
    Text: PSMN015-60PS N-channel 60 V 14.8 mΩ standard level MOSFET Rev. 02 — 22 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PSMN015-60PS PSMN015-60PS psmn015 60ps PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		BSS84AKT OT416 SC-75) AEC-Q101 PDF

    BSS83 M74

    Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor


    Original     		BSS83 OT143 BSS83 M74 mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83 PDF

    BSS84AKS

    Abstract: No abstract text available
    Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.


    Original     		BSS84AKS OT363 SC-88) AEC-Q101 BSS84AKS PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		BSS84AKMB DFN1006B-3 OT883B) PDF

    Dual P-Channel MOSFET

    Abstract: g1 TRANSISTOR SMD MARKING CODE
    Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS84AKV OT666 AEC-Q101 771-BSS84AKV115 BSS84AKV Dual P-Channel MOSFET g1 TRANSISTOR SMD MARKING CODE PDF

    BSS84AKS

    Abstract: TSSOP-6 BSS84AK
    Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.


    Original     		BSS84AKS OT363 SC-88) AEC-Q101 BSS84AKS TSSOP-6 BSS84AK PDF

    MOSFET TRANSISTOR SMD MARKING CODE ZA

    Abstract: SC-101
    Text: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		BSS84AKM OT883 SC-101) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE ZA SC-101 PDF

    ixf55n50

    Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
    Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions


    Original     		125OC 100ms ixf55n50 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA


    Original     		VS-FC220SA20 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    8/S 170 MOSFET TRANSISTOR

    Abstract: No abstract text available
    Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS84AKV OT666 AEC-Q101 8/S 170 MOSFET TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K PSMN5R6-100BS N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications


    Original     		PSMN5R6-100BS OT404 PDF

    BSS84AKW

    Abstract: BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL
    Text: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		BSS84AKW OT323 SC-70) AEC-Q101 771-BSS84AKW115 BSS84AKW BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL PDF

    A1 SOT323 MOSFET P-CHANNEL

    Abstract: transistor sc-70 marking codes FET marking codes sc-70
    Text: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		BSS84AKW OT323 SC-70) AEC-Q101 A1 SOT323 MOSFET P-CHANNEL transistor sc-70 marking codes FET marking codes sc-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		BSS84AKM OT883 SC-101) AEC-Q101 PDF

    SOT669* PSMN017-60YS

    Abstract: PSMN017-60YS
    Text: PSMN017-60YS N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PSMN017-60YS PSMN017-60YS SOT669* PSMN017-60YS PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS84AK O-236AB) AEC-Q101 PDF

    PSMN5R6-100PS

    Abstract: No abstract text available
    Text: PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET Rev. 02 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PSMN5R6-100PS O-220 PSMN5R6-100PS PDF