2N7002 SOT23
Abstract: marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702
Text: 2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 7.5 @ VGS= 10V 0.5 7.5 @ VGS= 5V 0.05 V(BR)DSS 60 Description A small signal MOSFET for general purpose switching applications. Features D • Fast switching speed • Low gate drive capability
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2N7002
D-81541
2N7002 SOT23
marking 702 sot23
2N7002 MARKING
design ideas
2N7002
TS16949
MARKING 702
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DMN65D8L-7
Abstract: No abstract text available
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
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DMN65D8L-7
Abstract: dmn65d8l
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
dmn65d8l
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Untitled
Abstract: No abstract text available
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
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DMN33D8L
Abstract: No abstract text available
Text: DMN33D8L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 30V 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance
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DMN33D8L
250mA
200mA
AEC-Q101
DS36124
DMN33D8L
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Untitled
Abstract: No abstract text available
Text: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.
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SSS2N7002L
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance
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2N7002K
380mA
310mA
DS30896
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TSM2N7002
Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
Text: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time
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TSM2N7002E
250mA
OT-363
TSM2N7002ECX
OT-23
TSM2N7002ECU
OT-323
OT-323
TSM2N7002
TSM2N7002E
TSM2N7002ECU
TSM2N7002ECX
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Power MOSFET N-Channel sot-23
Abstract: TSM2N7002CX TSM2N7002
Text: TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS on , Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω Features Advanced trench process technology No minority carrier storage time
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TSM2N7002
500mA
OT-23
TSM2N7002CX
OT-23
115mA,
300uS,
Power MOSFET N-Channel sot-23
TSM2N7002CX
TSM2N7002
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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A102
Abstract: APM2306 J-STD-020A
Text: APM2306 N-Channel Enhancement Mode MOSFET Features • Pin Description D 30V/3.5A, RDS ON =70mΩ(typ.) @ VGS=5V 3 RDS(ON)=42mΩ(typ.) @ VGS=10V • • • Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Applications
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APM2306
OT-23
OT-23
A102
APM2306
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed
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2N7002K
380mA
310mA
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DS30896
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FDV305N
Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Text: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06
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OT-23
OT-23/SuperSOT-3
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDN340P
FDV305N
NDS351AN
NDS331N
FDN327N
supersot-3
FDV301N
MOSFET SOT-23
FDV302P
MMBF170 rohs
FDN335N
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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MARKING C7K
Abstract: MSOT-23 2n7002k EQUIVALENT
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
MSOT-23
2n7002k EQUIVALENT
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ELM33416CA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM33416CA-S •概要 ■特点 ELM33416CA-S 是 N 沟道低输入电容，低工作电压， •Vds=100V 低导通电阻的大电流 MOSFET。 ·Id=1.3A ·Rds on < 230mΩ (Vgs=10V) ·Rds(on) < 240mΩ (Vgs=5V) ■绝对最大额定值
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ELM33416CA-S
ELM33416CA
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APM2306
Abstract: APM2306A STD-020C
Text: APM2306A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3.5A , D RDS ON =42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)
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APM2306A
OT-23
APM2306
APM2306
APM2306A
STD-020C
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MOSFET N SOT-23
Abstract: No abstract text available
Text: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.
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SSS2N7002K
OT-23
OT-23
MOSFET N SOT-23
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marking code B2 MOSFET SOT23
Abstract: A102 APM2306 APM2306A
Text: APM2306A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3.5A , RDS ON =42mΩ(typ.) @ VGS=10V D S RDS(ON)=70mΩ(typ.) @ VGS=5V • • • G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available
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APM2306A
OT-23
APM2306
marking code B2 MOSFET SOT23
A102
APM2306
APM2306A
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MARKING C7K
Abstract: 2N7002K-7 2n7002k EQUIVALENT
Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
2N7002K-7
2n7002k EQUIVALENT
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Untitled
Abstract: No abstract text available
Text: DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) 50V 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage
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DMN53D0U
AEC-Q101
DS37098
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MOSFET N SOT-23
Abstract: DS1060
Text: SSS2N7002E N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 02 3.0 @VGS = 10V 0.25A 60V 70 VDS (V) SOT-23 G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free.
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SSS2N7002E
OT-23
OT-23
MOSFET N SOT-23
DS1060
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