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    MOSFET WITH INTEGRATED SCHOTTKY DIODES Search Results

    MOSFET WITH INTEGRATED SCHOTTKY DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET WITH INTEGRATED SCHOTTKY DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMS2085LSD P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits MOSFET RDS on max 85mΩ @ VGS = -10V 125mΩ @ VGS = -4.5V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A


    Original     		PDF DMS2085LSD 400mV 470mV AEC-Q101 DS36926

    DMS2095LFDB

    Abstract: No abstract text available
    Text: DMS2095LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE Product Summary Features and Benefits • MOSFET with Low RDS ON – minimize conduction losses RDS(on) max ID • Low Gate Threshold Voltage, -1.3V Max 95mΩ @ VGS = -4.5V -3.4A


    Original     		PDF DMS2095LFDB AEC-Q101 400mV DS35955 DMS2095LFDB

    10PZ12B

    Abstract: No abstract text available
    Text: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current


    Original     		PDF 10-PZ12B2A040MR01-M330L68Y 10PZ12B

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ123BA080ME-M909L18Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor


    Original     		PDF 10-PZ123BA080ME-M909L18Y 200V/80mâ 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor


    Original     		PDF 10-PZ123BA080MR-M909L28Y 200V/80mâ 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ126PA080MR-M909F28Y flow 3xPHASE-SiC 1200 V / 80 mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 phase inverter topology with split output ● Improved switching behavior reduced turn on energy and X-conduction ● Ultra Low Inductance with integrated DC-capacitors


    Original     		PDF 10-PZ126PA080MR-M909F28Y 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ126PA080ME-M909F18Y flow 3xPHASE-SiC 1200 V / 80 mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 phase inverter topology with split output ● Improved switching behavior reduced turn on energy and X-conduction ● Ultra Low Inductance with integrated DC-capacitors


    Original     		PDF 10-PZ126PA080ME-M909F18Y 100kHz

    LTC7510

    Abstract: LTC4445 RJK0305 LTC4443-1 bg 43 transistor pin diagram of MOSFET list of n channel power mosfet mosfet cross reference n-channel mosfet triggering p 4443
    Text: LTC4443/LTC4443-1 High Speed Synchronous N-Channel MOSFET Drivers FEATURES DESCRIPTION n The LTC 4443 is a high frequency gate driver with integrated bootstrap Schottky diode designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology.


    Original     		PDF LTC4443/LTC4443-1 3000pF LTC4445/LTC4445-1 LTC4447 LTC7510 150kHz 4443fa LTC7510 LTC4445 RJK0305 LTC4443-1 bg 43 transistor pin diagram of MOSFET list of n channel power mosfet mosfet cross reference n-channel mosfet triggering p 4443

    LTC7510

    Abstract: LTC4443-1 LTC4445 LTC4442-1 LTC4443 LTC4443EDD LTC4443EDD-1 LTC4443IDD LTC4443IDD-1 LTC4443I
    Text: LTC4443/LTC4443-1 High Speed Synchronous N-Channel MOSFET Drivers FEATURES DESCRIPTION • The LTC 4443 is a high frequency gate driver with integrated bootstrap Schottky diode designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology.


    Original     		PDF LTC4443/LTC4443-1 3000pF LTC4442/LTC4442-1 LTC4445/LTC4445-1 LTC7510 150kHz 4443f LTC7510 LTC4443-1 LTC4445 LTC4442-1 LTC4443 LTC4443EDD LTC4443EDD-1 LTC4443IDD LTC4443IDD-1 LTC4443I

    PIC-005

    Abstract: RC Snubber Design in EZBuck Circuit RC snubber mosfet design RC snubber diode snubber circuit for mosfet Snubber Design RC snubber AOZ1014 snubber capacitor for low frequency AOZ101x
    Text: Application Note PIC-005 RC Snubber Design in EZBUCK Circuit Zach Zhang, Alpha & Omega Semiconductor, Inc. The AOZ101x EZBuck family IC are peak current-mode controlled step down regulators with integrated high-side P-channel MOSFET. A Schottky diode is used as low-side freewheeling device. It operates from a 4.5V to 16V input voltage range and


    Original     		PDF PIC-005 AOZ101x AOZ1013 AOZ1014 500kHz) PIC-005 RC Snubber Design in EZBuck Circuit RC snubber mosfet design RC snubber diode snubber circuit for mosfet Snubber Design RC snubber snubber capacitor for low frequency

    AN2239

    Abstract: MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A STS12NH3LL STS20NHS3LL STS25NH3LL high power pulse generator with mosfet
    Text: AN2239 APPLICATION NOTE Maximizing Synchronous Buck Converter Efficiency with Standard STripFETs with Integrated Schottky Diodes Introduction This document explains the history, improvements, and performance evaluation of low voltage Power MOSFETs with advanced “strip” technology STripFET™ . The integration of a Schottky diode with the


    Original     		PDF AN2239 AN2239 MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A STS12NH3LL STS20NHS3LL STS25NH3LL high power pulse generator with mosfet

    AN72

    Abstract: DMN4800LSS SCHOTTKY 4A 600V dmg4496 DMG4466SS DMG4466SSS DMG4496SSS mosfet with Integrated Schottky Diodes
    Text: AN72 DIOFET boosts PoL efficiency, reduces heat versus standard MOSFET Dean Wang, and Yong Ang, Applications Engineer, Diodes Inc. Introduction This application note describes the benefits of using the DMS3014SSS in the low-side MOSFET position of synchronous buck point-of-load PoL converters. The DMS3014SSS utilizes Diodes


    Original     		PDF DMS3014SSS AN72 DMN4800LSS SCHOTTKY 4A 600V dmg4496 DMG4466SS DMG4466SSS DMG4496SSS mosfet with Integrated Schottky Diodes

    Latest Products Q3-10

    Abstract: FULL WAVE mosfet RECTIFIER CIRCUITS 12v dc full wave bridge rectifier FULL WAVE RECTIFIER CIRCUITS with scr SCR 12V battery charging bridge rectifier 100A 100V battery charging with scr and circuit SCR full wave bridge rectifier Schottky Diode 40V 5A CMLDM7003
    Text: Dual, Schottky Diodes CMRSH-4DO 40V, 200mA Dual, Schottky Diodes Features: Benefits: Applications: • Dual, isolated, 40V, 200mA • Low reverse current Schottky diodes 25nA @ 30V • High current rating in an extremely small SOT-963 package • DC/DC conversion


    Original     		PDF 200mA 200mA OT-963 Contduct/CMLDM7003 CTLS5064-M532 CTLS5064R-M532 CTLS5064-M532 CTLS5064R-M532 TLM532 Latest Products Q3-10 FULL WAVE mosfet RECTIFIER CIRCUITS 12v dc full wave bridge rectifier FULL WAVE RECTIFIER CIRCUITS with scr SCR 12V battery charging bridge rectifier 100A 100V battery charging with scr and circuit SCR full wave bridge rectifier Schottky Diode 40V 5A CMLDM7003

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DN97 ZXGD3103 Boosts Set Top Box Power Supply Efficiency, Reduces Heat Dissipation Yong Ang, Senior Applications Engineer, Diodes Inc. Introduction This design note describes the benefits of using the ZXGD3103 for secondary side synchronous


    Original     		PDF ZXGD3103 ZXGD3103,

    nx1117

    Abstract: Electrohydraulic Power Steering SOD128 airbag 006aab592 BM TVS smd schottky diode sot363 TVS bm SMA AEC-Q100 SC-76
    Text: Automotive discrete solutions High quality and innovation Automotive discrete solutions Body Control Unit } Low VF MEGA Schottky diodes Interior lighting } Low VF (MEGA) } Low VCEsat (BISS) transistors Airbag control } Low VF (MEGA) Schottky rectifier } MOSFETs


    Original     		PDF NXV426x 006aab592 TL431 nx1117 Electrohydraulic Power Steering SOD128 airbag 006aab592 BM TVS smd schottky diode sot363 TVS bm SMA AEC-Q100 SC-76

    12v dc full wave bridge rectifier

    Abstract: Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v
    Text: Dual, Schottky Diodes CMRD6263DO 70V, 15mA Dual, Schottky Diodes Features: Benefits: Applications: SOT-963 Actual Size in mm 1.05 x 1.05 x 0.5 • Dual, isolated, 70V, 15mA Schottky diodes • Low reverse current 98nA @ 50V • High total energy efficiency


    Original     		PDF CMRD6263DO OT-963 OT-963 com/info/CMRD6263DO informati160mA, 125mW) CMRDM3590 com/info/CMRDM3590 com/product/CMRDM3590 12v dc full wave bridge rectifier Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    Quasi-resonant Converter for induction cooker

    Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
    Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8


    Original     		PDF Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter

    Untitled

    Abstract: No abstract text available
    Text: DIO 4469 Why Diodes - MOSFET2_- 09/10/2014 01:05 Page 1 WHY DIODES – MOSFET2 Why DIODES? MOSFETs Extensive Portfolio Extensive MOSFET Portfolio Broad portfolio from small-signal to power MOSFETs Single, dual, complementary and H-Bridge Quad products BVDSS voltage ratings from 12 to 650V


    Original     		PDF DFN0606 DFN0606 DFN1006 DMN2023UCB4 DMP2100UCB9 DMN1032UCB4 DMP1080UCB4

    simple 5v to 19v converter

    Abstract: DMG4466SS DMS3015SSS MOSFET and parallel Schottky diode AN73 DMG4466SSS DMG4496SSS
    Text: AN73 High efficiency DC-DC PoL conversion using the DMS3015SSS Dean Wang, Applications Engineer, Diodes Inc. Introduction This application note describes the benefits of using the DIOFET DMS3015SSS in the low-side MOSFET position of synchronous buck point-of-load PoL converters. The DIOFET™ products


    Original     		PDF DMS3015SSS DMS3015SSS simple 5v to 19v converter DMG4466SS MOSFET and parallel Schottky diode AN73 DMG4466SSS DMG4496SSS

    class 180h transformer

    Abstract: 12v to 24v LLC converter resonant llc resonant dc-dc converter LLC resonant converter transformer LLC resonant transformer TO-263 footprint transistor MOSFET 924 ON resonant converter theory high efficiency rectifier 100v 1a resonant llc low voltage
    Text: AN69 Synchronous rectifier reduces conduction loss in LLC resonant power supplies Yong Ang, Snr Applications Engineer, Diodes Incorporated With increasing drive to shrink electronic solutions, the merits of resonant power converters are now attracting increased attention among power supply engineers. This will especially affect the LCD TV


    Original     		PDF 80PLUS 85PLUS class 180h transformer 12v to 24v LLC converter resonant llc resonant dc-dc converter LLC resonant converter transformer LLC resonant transformer TO-263 footprint transistor MOSFET 924 ON resonant converter theory high efficiency rectifier 100v 1a resonant llc low voltage

    3kw pfc

    Abstract: No abstract text available
    Text: DIO 3706 "Why Diodes" Discrete & Analog Flyer V11_- 04/06/2013 19:26 Page 1 DC-DC Why DIODES? Diodes Incorporated provides product designers with a broad range of Standard, Discrete, Logic and Analog IC semiconductor components that are renowned for their


    Original     		PDF 600mV 3kw pfc

    SOD523 footprint

    Abstract: PMEG2005EB PBSS4240DPN PBSS4240V PBSS4320T PMEG2010EA PMEG2010EV SC-76 philips IC 16 Schottky diode wafer
    Text: Semiconductors Taking the heat out of transistors and diodes Philips’ highly efficient low VCEsat BISS transistors and MEGA Schottky diodes All electronic switches drain power and generate heat. But what could you do with transistors and diodes that are significantly more efficient


    Original     		PDF OT666 PBSS4240V SOD523 footprint PMEG2005EB PBSS4240DPN PBSS4320T PMEG2010EA PMEG2010EV SC-76 philips IC 16 Schottky diode wafer

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS UC1706 UC2706 UC3706 U N IT R G D E Dual Output Driver DESCRIPTION FEATURES The UC1706 family of output drivers are made with a high-speed Schottky process to interlace between low-level control functions and highpower switching devices - particularly power MOSFET’s. These devices


    OCR Scan     		PDF UC1706 UC2706 UC3706 UC1706 40nsec 1000pF UC3611