MOTOROLA 813 TRANSISTOR Search Results

MOTOROLA 813 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA 813 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
56-590-65-3B Ferrite Beads Abstract: NI-880 MRF19090 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and	Original	MRF19090 MRF19090S MRF19090SR3 56-590-65-3B Ferrite Beads NI-880	PDF
56-590-65-3B Ferrite Beads Abstract: T491X226K035AS4394 T495X106K035AS4394 MRF19090 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and	Original	MRF19090 MRF19090S MRF19090SR3 56-590-65-3B Ferrite Beads T491X226K035AS4394 T495X106K035AS4394	PDF
MOSFET Transistors IRL Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier	Original	MRF19060 MRF19060R3 MRF19060S MRF19060SR3 MOSFET Transistors IRL	PDF
22 Z1 Abstract: z14 SMT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier	Original	MRF19060 MRF19060R3 MRF19060SR3 22 Z1 z14 SMT	PDF
MRF19030 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and	Original	MRF19030R3 MRF19030SR3 MRF19030	PDF
j721 Abstract: j435 MRF19030 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and	Original	Gain990 MRF19030 MRF19030R3 MRF19030S MRF19030SR3 j721 j435	PDF
567 tone Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3 Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19060/D MRF19060 MRF19060R3 MRF19060SR3 MRF19060 MRF19060R3 567 tone 100B100JCA500X CDR33BX104AKWS MRF19060SR3	PDF
100B100JCA500X Abstract: CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3 Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19060/D MRF19060 MRF19060R3 MRF19060SR3 MRF19060 MRF19060R3 100B100JCA500X CDR33BX104AKWS MRF19060SR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3 MRF19060/D	PDF
MRF19030 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030 MRF19030R3 MRF19030S MRF19030SR3 MRF19030/D	PDF
MRF19030 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to	Original	MRF19030/D MRF19030 MRF19030R3 MRF19030S MRF19030SR3	PDF
MRF19030 Abstract: 400S MRF19030R3 MRF19030SR3 Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030R3 MRF19030SR3 MRF19030R3 MRF19030 400S MRF19030SR3	PDF
motorola b34 Abstract: MRF19090 56-590-65/3B 465B MRF19090S MRF19090SR3 T495X106K035AS4394 B34 motorola LAMBDA SEMICONDUCTORS Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with	Original	MRF19090/D MRF19090 MRF19090S MRF19090SR3 MRF19090 MRF19090S motorola b34 56-590-65/3B 465B MRF19090SR3 T495X106K035AS4394 B34 motorola LAMBDA SEMICONDUCTORS	PDF
MRF19090 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to	Original	MRF19090/D MRF19090 MRF19090S	PDF

MRF19030 Abstract: 400S MRF19030R3 MRF19030SR3 Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030R3 MRF19030SR3 MRF19030R3 MRF19030 400S MRF19030SR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.	Original	IntegrF19120 MRF19120S MRF19120	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF19120 MRF19120S	PDF
2n5642 Abstract: 2N5642 motorola 2N5642 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •	OCR Scan	2N5642 2n5642 2N5642 motorola 2N5642 equivalent	PDF
Motorola 2N6083 Abstract: sem 2106 2N6083 Text: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications	OCR Scan	2N6083 Motorola 2N6083 sem 2106 2N6083	PDF
MRF232 Abstract: H546 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli cations in industrial and commercial FM equipment operating in the	OCR Scan	MRF232 MRF232 H546	PDF
2n6082 Abstract: No abstract text available Text: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications	OCR Scan	2N6082 2N6082	PDF
2N6082 Abstract: transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6082 T h e R F L in e 25 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N NPN S IL IC O N RF POWER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in com m ercial and industrial equipm ent operating to	OCR Scan	2N6082 I14AWG. 2N6082 transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70	PDF
IC SEM 2105 Abstract: RF POWER TRANSISTOR NPN, motorola transistor 0132 2N Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6082 The RF Line 2 5 W - 175 M H z RF POWER TRANSISTOR NPN SILIC O N NPN S IL IC O N R F POW ER T R A N S IS T O R S . . . designed fo r 12.5 V o lt V H F large-signal a m plifier applications required in commercial and industrial equipm ent operating to	OCR Scan	2N6082 IC SEM 2105 RF POWER TRANSISTOR NPN, motorola transistor 0132 2N	PDF

MOTOROLA 813 TRANSISTOR Search Results

MOTOROLA 813 TRANSISTOR Result Highlights (5)

MOTOROLA 813 TRANSISTOR Datasheets Context Search

56-590-65-3B Ferrite Beads

56-590-65-3B Ferrite Beads

MOSFET Transistors IRL

22 Z1

MRF19030

j721

567 tone

100B100JCA500X

Untitled

MRF19030

MRF19030

MRF19030

motorola b34

MRF19090

MRF19030

Untitled

Untitled

Untitled

2n5642

Motorola 2N6083

MRF232

2n6082

2N6082

IC SEM 2105