2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
2N3797
MPF102 equivalent transistor
MPF102 JFET
mpf102 fet
2N3797 equivalent
2N4221 motorola
MPF102 Transistor
mpf102 application note
P-Channel Depletion Mode FET
JFET TRANSISTOR REPLACEMENT GUIDE
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
AN211A
MPF102 JFET
MPF102 equivalent transistor
MPF102 Transistor
MPF102 JFET data sheet
2N3797
2N3797 equivalent
mpf102 fet
mpf102 equivalent P channel
2N4221 motorola
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MPF102 JFET
Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory
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AN211A/D
AN211A
MPF102 JFET
motorola AN211A
2N3797
MPF102 Transistor
2N4221 MOTOROLA POWER TRANSISTOR
2N4221 motorola
JFET with Yos
MPF102 circuit application
2N4351 MOTOROLA
igfet
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of
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MRF173/D
MRF173
MRF173/D*
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motorola AN211A
Abstract: "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173 MRF173CQ VK200
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of
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MRF173/D
MRF173
MRF173CQ
MRF173
motorola AN211A
"RF MOSFETs"
zener motorola
VK20019-4B
1N5925A
AN211A
AN721
MRF173CQ
VK200
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RF POWER VERTICAL MOSFET 1000 w
Abstract: J50 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF174
MRF174.
AN721,
MRF174
RF POWER VERTICAL MOSFET 1000 w
J50 mosfet
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"RF MOSFETs"
Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
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MRF174/D
MRF174
MRF174/D*
"RF MOSFETs"
motorola bipolar transistor data manual
AN721
J50 mosfet
arco
zener motorola
1N5925A
AN211A
MRF174
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MRF174
Abstract: "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual
Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
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MRF174/D
MRF174
MRF174/D*
MRF174
"RF MOSFETs"
1N5925A
AN211A
AN721
RF MOSFETs
motorola bipolar transistor data manual
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MRF1550F
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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AN215A,
MRF1550T1
MRF1550FT1
MRF1550F
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
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MRF171/D
MRF171
MRF171/D*
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MRF174
Abstract: motorola an721 application
Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF174 ARCHIVE INFORMATION N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
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MRF174/D
MRF174
MRF174/D
MRF174/D*
motorola an721 application
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MRF1550
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550T1
AN215A,
MRF1550
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EB209
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband
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MRF1550T1
AN215A,
EB209
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mrf5015
Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF5015/D
MRF5015
MRF5015/D*
mrf5015
S2184
AN721
"RF MOSFETs"
flange RF termination 50
S11 zener diode
AN211A
AN215A
MRF5015 equivalent
Nippon capacitors
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"RF power MOSFETs"
Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors
Text: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF5035/D
MRF5035
MRF5035/D*
"RF power MOSFETs"
AN211A
AN215A
AN721
MRF5035
Nippon capacitors
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equivalent for transistor tt 2206
Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts
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MRF163,
MRF163
AN215A
equivalent for transistor tt 2206
equivalent transistor TT 2206
transistor tt 2206
TT 2206 transistor
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RF MOSFETs
Abstract: ax vhf hen vd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed for broadband com mercial and military applications up to 200 MHz frequency range. The high-pow er, high-gain and broadband performance of
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MRF173.
MRF173
RF MOSFETs
ax vhf hen vd
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Helipot
Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF171
MRF171,
MRF171
AN215A
Helipot
R10K-L.25
7216-R10K-L
motorola an215a
r10kl.25
helipot 7216
R/High frequency MRF transistor
motorola MRF 172
R20KL.25 HELIPOT
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF174 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF174
MRF174.
AN721,
MRF174
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motorola MRF171
Abstract: mrf171 Helipot "RF MOSFETs" AN721 AN215A 0832
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF171,
MRF171
AN215A
3b72S4
motorola MRF171
Helipot
"RF MOSFETs"
AN721
0832
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C1C14
Abstract: Motorola AR 164
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
C1C14
Motorola AR 164
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
MRF5035.
AN721,
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application MOSFET transmitters fm
Abstract: TOROIDS Design Considerations mrf141g
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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Helipot
Abstract: helipot 100 Helipot amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF171,
MRF171
AN215A
Helipot
helipot 100
Helipot amplifier
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