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    MOTOROLA AN211A FIELD EFFECT TRANSISTORS IN THEORY Search Results

    MOTOROLA AN211A FIELD EFFECT TRANSISTORS IN THEORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA AN211A FIELD EFFECT TRANSISTORS IN THEORY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE PDF

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola PDF

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


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    AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of


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    MRF173/D MRF173 MRF173/D* PDF

    motorola AN211A

    Abstract: "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173 MRF173CQ VK200
    Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of


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    MRF173/D MRF173 MRF173CQ MRF173 motorola AN211A "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173CQ VK200 PDF

    RF POWER VERTICAL MOSFET 1000 w

    Abstract: J50 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF174 MRF174. AN721, MRF174 RF POWER VERTICAL MOSFET 1000 w J50 mosfet PDF

    "RF MOSFETs"

    Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
    Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


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    MRF174/D MRF174 MRF174/D* "RF MOSFETs" motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174 PDF

    MRF174

    Abstract: "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual
    Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


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    MRF174/D MRF174 MRF174/D* MRF174 "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual PDF

    MRF1550F

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


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    AN215A, MRF1550T1 MRF1550FT1 MRF1550F PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


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    MRF171/D MRF171 MRF171/D* PDF

    MRF174

    Abstract: motorola an721 application
    Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF174 ARCHIVE INFORMATION N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


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    MRF174/D MRF174 MRF174/D MRF174/D* motorola an721 application PDF

    MRF1550

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    MRF1550T1 AN215A, MRF1550 PDF

    EB209

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband


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    MRF1550T1 AN215A, EB209 PDF

    mrf5015

    Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


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    MRF5015/D MRF5015 MRF5015/D* mrf5015 S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors PDF

    "RF power MOSFETs"

    Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors
    Text: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


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    MRF5035/D MRF5035 MRF5035/D* "RF power MOSFETs" AN211A AN215A AN721 MRF5035 Nippon capacitors PDF

    equivalent for transistor tt 2206

    Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts


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    MRF163, MRF163 AN215A equivalent for transistor tt 2206 equivalent transistor TT 2206 transistor tt 2206 TT 2206 transistor PDF

    RF MOSFETs

    Abstract: ax vhf hen vd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed for broadband com mercial and military applications up to 200 MHz frequency range. The high-pow er, high-gain and broadband performance of


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    MRF173. MRF173 RF MOSFETs ax vhf hen vd PDF

    Helipot

    Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF171 MRF171, MRF171 AN215A Helipot R10K-L.25 7216-R10K-L motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF174 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF174 MRF174. AN721, MRF174 PDF

    motorola MRF171

    Abstract: mrf171 Helipot "RF MOSFETs" AN721 AN215A 0832
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF171, MRF171 AN215A 3b72S4 motorola MRF171 Helipot "RF MOSFETs" AN721 0832 PDF

    C1C14

    Abstract: Motorola AR 164
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


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    MRF5035 AN215A, C1C14 Motorola AR 164 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


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    MRF5035 AN215A, MRF5035. AN721, PDF

    application MOSFET transmitters fm

    Abstract: TOROIDS Design Considerations mrf141g
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF

    Helipot

    Abstract: helipot 100 Helipot amplifier
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF171, MRF171 AN215A Helipot helipot 100 Helipot amplifier PDF